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Flat adenoma-carcinoma sequence with high-malignancy potential as demonstrated by CD10 and β-catenin expression: a different pathway from the polypoid adenoma-carcinoma sequence

Histopathology, 2008-04, Vol.52 (5), p.569-577

2008

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Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.85-92

2009

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A case of multiple carcinoid tumors of the small intestine

Endoscopy, 2009-11, Vol.41 Suppl 2, p.E299

2009

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Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.634-635

2009

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Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1726-1733

2004

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Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

2010 Symposium on VLSI Technology, 2010, p.33-34

2010

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Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation

Gut, 2007-10, Vol.56 (10), p.1358-1363

2007

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Simulation of Drain Current Reduction Caused by Process-Induced Stress

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.199-202

2005

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Hot-electron hardened Si-gate MOSFET utilizing F implantation

IEEE electron device letters, 1989-04, Vol.10 (4), p.141-143

1989

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Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.85-92

2009

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Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures

Journal of applied physics, 2011-02, Vol.109 (3), p.036102-036102-3

2011

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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

IEEE electron device letters, 2009-05, Vol.30 (5), p.466

2009

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NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.79-85

2002

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256-Mb DRAM circuit technologies for file applications

IEEE journal of solid-state circuits, 1993-11, Vol.28 (11), p.1105-1113

1993

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Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.136-137

2004

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Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- [Formula Omitted] FETs

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1042-1049

2008

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Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

2010 Symposium on VLSI Technology, 2010, p.71-72

2010

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Metal/oxide/semiconductor interface investigated by monoenergetic positrons

Physics letters. A, 1988-10, Vol.133 (1), p.82-84

1988

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Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

2009 IEEE International Reliability Physics Symposium, 2009, p.45-50

2009

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Gate-oxide breakdown accelerated by large drain current in n-channel MOSFET's

IEEE electron device letters, 1991-03, Vol.12 (3), p.134-136

1991

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VLSI reliability challenges: from device physics to wafer scale systems

Proceedings of the IEEE, 1993-05, Vol.81 (5), p.653-674

1993

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The fabrication of low leakage junction with ultra shallow profile by the combination annealing of 10-ms low power and 2-ms high power FLA

2009 Symposium on VLSI Technology, 2009, p.162-163

2009

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Channel length and width dependence of hot-carrier hardness in fluorinated MOSFETs

IEEE electron device letters, 1989-12, Vol.10 (12), p.540-542

1989

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Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.387-390

2009

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FRACTURE-TOUGHNESS TEST OF SILICON NITRIDES WITH DIFFERENT MICROSTRUCTURES USING VICKERS INDENTATION

Ceramic Engineering and Science Proceedings, 2008, Vol.28 (2), p.433-442

2008

Volltextzugriff (PDF)

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Flat adenoma-carcinoma sequence with high-malignancy potential as demonstrated by CD10 and β-catenin expression: a different pathway from the polypoid adenoma-carcinoma sequence

Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

A case of multiple carcinoid tumors of the small intestine

Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current

Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation

Simulation of Drain Current Reduction Caused by Process-Induced Stress

Hot-electron hardened Si-gate MOSFET utilizing F implantation

Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

256-Mb DRAM circuit technologies for file applications

Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- [Formula Omitted] FETs

Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

Metal/oxide/semiconductor interface investigated by monoenergetic positrons

Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

Gate-oxide breakdown accelerated by large drain current in n-channel MOSFET's

VLSI reliability challenges: from device physics to wafer scale systems

The fabrication of low leakage junction with ultra shallow profile by the combination annealing of 10-ms low power and 2-ms high power FLA

Channel length and width dependence of hot-carrier hardness in fluorinated MOSFETs

Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

FRACTURE-TOUGHNESS TEST OF SILICON NITRIDES WITH DIFFERENT MICROSTRUCTURES USING VICKERS INDENTATION

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