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Technology development of high purity germanium crystals for radiation detectors

Journal of crystal growth, 2020-02, Vol.532, p.125396, Article 125396

2020

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Melt growth and properties of bulk BaSnO3 single crystals

Journal of physics. Condensed matter, 2017-02, Vol.29 (7), p.075701-075701

2017

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Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

Journal of crystal growth, 2019-01, Vol.505, p.69-73

2019

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Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

Journal of electronic materials, 2020-09, Vol.49 (9), p.5120-5132

2020

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Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method

Journal of crystal growth, 2018-10, Vol.500, p.5-10

2018

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VGF growth of 4 in. Ga-doped germanium crystals under magnetic and ultrasonic fields

Journal of crystal growth, 2012-08, Vol.352 (1), p.16-20

2012

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Evolution of real structure in Ge-Si mosaic crystals

Crystal research and technology (1979), 2016-12, Vol.51 (12), p.742-751

2016

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Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2005-07, Vol.400, p.170-174

2005

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Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method

Journal of crystal growth, 2020-12, Vol.552, p.125842, Article 125842

2020

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Stimulated Raman scattering and Raman laser operation in silicon single crystals at low temperatures

Laser physics letters, 2012-01, Vol.9 (12), p.858-867, Article 858

2012

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Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs)

Journal of crystal growth, 2004-05, Vol.265 (3), p.331-340

2004

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Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

Journal of crystal growth, 2004-09, Vol.269 (2), p.218-228

2004

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Dislocation patterning during crystal growth of semiconductor compounds (GaAs)

Materials science and technology, 2005-12, Vol.21 (12), p.1450-1454

2005

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Studies on dislocation patterning in 6-inch GaAs crystals

Physica status solidi. C, 2007-07, Vol.4 (8), p.2934-2939

2007

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Two-platinum-atom complex defects in silicon - an electron paramagnetic resonance study

Journal of physics. Condensed matter, 1999-10, Vol.11 (39), p.7615-7625

1999

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VGF growth of 4ANBin. Ga-doped germanium crystals under magnetic and ultrasonic fields

Journal of crystal growth, 2012-08, Vol.352 (1), p.16-20

2012

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VGF growth of 4in. Ga-doped germanium crystals under magnetic and ultrasonic fields

Journal of crystal growth, 2012-08, Vol.352 (1), p.16-20

2012

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Melt growth and properties of bulk BaSnO 3 single crystals

Journal of physics. Condensed matter, 2017-02, Vol.29 (7), p.075701

2017

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Carbon-related platinum defects in silicon: An electron paramagnetic resonance study of high spin states

Journal of applied physics, 1997-10, Vol.82 (7), p.3456-3461

1997

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Complexing in silicon induced by surface reactions : electron paramagnetic resonance detection of a 6-platinum cluster

Journal of applied physics, 1992-10, Vol.72 (7), p.3095-3101

1992

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Complexing of platinum in float zone and Czochralski silicon - electron paramagnetic resonance study of 6-platinum clusters and oxygen related 1-platinum midgap defect

Materials science and technology, 1995-07, Vol.11 (7), p.680-683

1995

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Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Journal of applied physics, 1996-09, Vol.80 (6), p.3435-3444

1996

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Characterization of etch figures on as-grown surfaces of GaPO4 crystals

Journal of crystal growth, 2005-02, Vol.275 (1-2), p.e1883-e1888

2005

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Characterization of etch figures on as-grown surfaces of GaPO 4 crystals

Journal of crystal growth, 2005, Vol.275 (1), p.e1883-e1888

2005

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Self-interstitial shallow-donor complexes in silicon: An electron-paramagnetic-resonance study

Physical review. B, Condensed matter, 1998-04, Vol.57 (16), p.9657-9662

1998

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Technology development of high purity germanium crystals for radiation detectors

Melt growth and properties of bulk BaSnO3 single crystals

Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method

VGF growth of 4 in. Ga-doped germanium crystals under magnetic and ultrasonic fields

Evolution of real structure in Ge-Si mosaic crystals

Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method

Stimulated Raman scattering and Raman laser operation in silicon single crystals at low temperatures

Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs)

Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

Dislocation patterning during crystal growth of semiconductor compounds (GaAs)

Studies on dislocation patterning in 6-inch GaAs crystals

Two-platinum-atom complex defects in silicon - an electron paramagnetic resonance study

VGF growth of 4ANBin. Ga-doped germanium crystals under magnetic and ultrasonic fields

VGF growth of 4in. Ga-doped germanium crystals under magnetic and ultrasonic fields

Melt growth and properties of bulk BaSnO 3 single crystals

Carbon-related platinum defects in silicon: An electron paramagnetic resonance study of high spin states

Complexing in silicon induced by surface reactions : electron paramagnetic resonance detection of a 6-platinum cluster

Complexing of platinum in float zone and Czochralski silicon - electron paramagnetic resonance study of 6-platinum clusters and oxygen related 1-platinum midgap defect

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Characterization of etch figures on as-grown surfaces of GaPO4 crystals

Characterization of etch figures on as-grown surfaces of GaPO 4 crystals

Self-interstitial shallow-donor complexes in silicon: An electron-paramagnetic-resonance study

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