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Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Journal of applied physics, 2021-04, Vol.129 (16)

2021

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Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Journal of applied physics, 2019-12, Vol.126 (21)

2019

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Dual-peak electroluminescence spectra generated from Al n /12 Ga 1-n/12 N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Journal of physics. D, Applied physics, 2022-06, Vol.55 (25), p.255102

2022

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Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6), p.61002

2017

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Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Journal of physics. D, Applied physics, 2022-06, Vol.55 (25)

2022

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Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Journal of physics. D, Applied physics, 2021-12, Vol.54 (48)

2021

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Discrete wavelengths observed in electroluminescence originating from Al 1/2 Ga 1/2 N and Al 1/3 Ga 2/3 N created in nonflat AlGaN quantum wells

Journal of physics. D, Applied physics, 2021-12, Vol.54 (48), p.485107

2021

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Study on the Main‐Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN‐Based DUV‐LEDs

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8), p.82101

2016

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Fabrication of large-sized silica monolith exceeding 1000 mL with high structural homogeneity

Journal of separation science, 2013-06, Vol.36 (12), p.1890-1896

2013

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Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.122101-122101-3

2011

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Frontispiece: Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011)

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.n/a

2011

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Gbps-Class Solar-Blind WDM Optical Wireless Communication By (264, 274, 282)-nm Deep-UV LEDs and CsTe Photomultiplier Tube

2023 Optical Fiber Communications Conference and Exhibition (OFC), 2023, p.1-3

2023

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An Outdoor Evaluation of 1-Gbps Optical Wireless Communication using AlGaN-based LED in 280-nm Band

2019 Conference on Lasers and Electro-Optics (CLEO), 2019, p.1-2

2019

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Up-to 292-Mbps Deep-UV Communication over a Diffuse-Line-of-Sight Link Based on Silicon Photo Multiplier Array

2020 European Conference on Optical Communications (ECOC), 2020, p.1-4

2020

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Characterization of a Self-Organized Deep-Ultraviolet Micro-Light-Emitting Diode Structure for High-Speed Solar-Blind Optical Wireless Communications

2020 Conference on Lasers and Electro-Optics (CLEO), 2020, p.1-2

2020

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Model of the external magnetic field effect on the H 2O 2 reaction on an SnO 2 surface

Surface science, 1993, Vol.298 (1), p.L191-L195

1993

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Development of AlGaN DUV-LED

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013, p.1-2

2013

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Sensing mechanism of SnO2 thin film gas sensors

Sensors and actuators. B, Chemical, 1993-06, Vol.14 (1-3), p.677-678

1993

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Sensing mechanism of SnO2 gas sensors

Journal of materials science, 1990, Vol.25 (1A), p.259-262

1990

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Model of the external magnetic field effect on the H2-O2 reaction on an SnO2 surface

Surface science, 1993-12, Vol.298 (1), p.L191-L195

1993

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Reaction mechanism of electrochemical-vapor deposition of yttria-stabilized zirconia film

Journal of applied physics, 1993-10, Vol.74 (7), p.4608-4613

1993

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Preparation of La(Sr)CrO3-δ thin film interconnector by high deposition rate laser ablation method

Solid state ionics, 1995-11, Vol.82 (1-2), p.107-111

1995

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Preparation of La1−xSrxCrO3− δ film by laser ablation method

Solid state ionics, 1995-02, Vol.76 (1), p.41-46

1995

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High power density solid oxide electrolyte fuel cells using Ru/Y 2O 3 stabilized zirconia cermet anodes

Solid state ionics, 1993, Vol.62 (1), p.125-130

1993

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Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Dual-peak electroluminescence spectra generated from Al n /12 Ga 1-n/12 N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Discrete wavelengths observed in electroluminescence originating from Al 1/2 Ga 1/2 N and Al 1/3 Ga 2/3 N created in nonflat AlGaN quantum wells

Study on the Main‐Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN‐Based DUV‐LEDs

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

Fabrication of large-sized silica monolith exceeding 1000 mL with high structural homogeneity

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Frontispiece: Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011)

Gbps-Class Solar-Blind WDM Optical Wireless Communication By (264, 274, 282)-nm Deep-UV LEDs and CsTe Photomultiplier Tube

An Outdoor Evaluation of 1-Gbps Optical Wireless Communication using AlGaN-based LED in 280-nm Band

Up-to 292-Mbps Deep-UV Communication over a Diffuse-Line-of-Sight Link Based on Silicon Photo Multiplier Array

Characterization of a Self-Organized Deep-Ultraviolet Micro-Light-Emitting Diode Structure for High-Speed Solar-Blind Optical Wireless Communications

Model of the external magnetic field effect on the H 2O 2 reaction on an SnO 2 surface

Development of AlGaN DUV-LED

Sensing mechanism of SnO2 thin film gas sensors

Sensing mechanism of SnO2 gas sensors

Model of the external magnetic field effect on the H2-O2 reaction on an SnO2 surface

Reaction mechanism of electrochemical-vapor deposition of yttria-stabilized zirconia film

Preparation of La(Sr)CrO3-δ thin film interconnector by high deposition rate laser ablation method

Preparation of La1−xSrxCrO3− δ film by laser ablation method

High power density solid oxide electrolyte fuel cells using Ru/Y 2O 3 stabilized zirconia cermet anodes

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