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A 0.01–50 GHz power detector with temperature compensation and wideband DC‐blocking capacitor

Microwave and optical technology letters, 2024-09, Vol.66 (9), p.n/a

2024

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0.01％阿托品对亚洲青少年儿童中低度近视屈光度与眼轴影响的Meta分析

国际眼科杂志, 2021-05, Vol.21 (5), p.854-860

2021

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A 0.037 pJ K2$ ext{K}^2$ 338 pW temperature sensor based on dynamic leakage‐suppression logic

Electronics letters, 2024-08, Vol.60 (16), p.n/a

2024

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A 0.037 pJ K2$\text{K}^2$ 338 pW temperature sensor based on dynamic leakage‐suppression logic

Electronics letters, 2024-08, Vol.60 (16), p.n/a

2024

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A 0.06-psRMS SSC-induced jitter, ΔΣ-dithering-free, 6-GHz spread-spectrum clock generator for serial-ATA generation

2011 Proceedings of the ESSCIRC (ESSCIRC), 2011, p.447-450

2011

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A 0.1-28 GHz Differential Cascaded Distributed Amplifier in 0.18-μm CMOS Technology

2019 IEEE MTT-S International Wireless Symposium (IWS), 2019, p.1-3

2019

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0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.179-181

2014

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A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007, p.1001-1004

2007

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0.2CNT/NiSex composite derived from CNT/MOF-74 as electrode material for electrochemical capacitor and electrochemical sensor

Microchemical journal, 2021-09, Vol.168, p.106519, Article 106519

2021

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A 0.33-V, 500-kHz, 3.94-[Formula Omitted] 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.863-867

2012

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A 0.33-V, 500-kHz, 3.94- \mu\hbox 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.863-867

2012

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A 0.4-to-0.8 V 0.1-to-5 MS/s 10 b two-step SAR ADC with TDC-based fine quantizer in 40-nm CMOS

Microelectronics, 2023-11, Vol.141, p.105974, Article 105974

2023

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A 0.5-5.6 GHz Inductorless Wideband LNA with Local Active Feedback

2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM), 2018, p.164-168

2018

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A 0.5-V Biomedical System-on-a-Chip for Intrabody Communication System

IEEE transactions on industrial electronics (1982), 2011-02, Vol.58 (2), p.690-699

2011

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A 0.5V 16nW 8.08-ENOB SAR ADC for ultra-low power sensor applications

2013 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications (IMWS-BIO), 2013, p.1-3

2013

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0.62 Pb/s Real-Time Transmission Over 360 km 7-Core MCFs Using 800 Gb/s Transceivers with Widened C+L Band EDFAs

2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM), 2023, p.1-4

2023

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A 0.75 dB NF LNA in GaAs pHEMT utilizing gate–drain capacitance and gradual inductor

Journal of semiconductors, 2015-07, Vol.36 (7), p.75001

2015

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A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductorProject supported by the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 172511KYSB20130108)

Journal of semiconductors, 2015-07, Vol.36 (7)

2015

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A 0.8V, 560fJ/bit, 14Gb/s injection-locked receiver with input duty-cycle distortion tolerable edge-rotating 5/4X sub-rate CDR in 65nm CMOS

2014 Symposium on VLSI Circuits Digest of Technical Papers, 2014, p.1-2

2014

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0.9-A/mm, 2.6-V Flash-Like Normally-Off Al 2 O 3 /AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

IEEE electron device letters, 2018-03, Vol.39 (3), p.397-400

2018

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0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

IEEE electron device letters, 2018-03, Vol.39 (3), p.397-400

2018

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Na 0.91 MnO 2 with an Extended Layer Structure and Excellent Pseudocapacitive Behavior as a Cathode Material for Sodium-Ion Batteries

ACS applied energy materials, 2022-04, Vol.5 (4), p.4505-4512

2022

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0.94Na1/2Bi1/2TiO3-0.06BaTiO3:TiO2无铅复合陶瓷的结构及退极化温度研究

无机材料学报, 2019-10, Vol.34 (10), p.1085-1090

2019

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007 - Association of accelerometer-measured physical activity patterns with cardiovascular diseases and mortality in people with osteoarthritis: a prospective cohort study

Osteoarthritis and cartilage, 2024-04, Vol.32, p.S10-S11

2024

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0077 Reconstruction of exposed cohort and cumulative dose of radio-contaminated building residents for epidemiological study - Updated information

Occupational and environmental medicine (London, England), 2014-06, Vol.71 (Suppl 1), p.A69-A69

2014

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A 0.01–50 GHz power detector with temperature compensation and wideband DC‐blocking capacitor

0.01％阿托品对亚洲青少年儿童中低度近视屈光度与眼轴影响的Meta分析

A 0.037 pJ K2$ ext{K}^2$ 338 pW temperature sensor based on dynamic leakage‐suppression logic

A 0.037 pJ K2$\text{K}^2$ 338 pW temperature sensor based on dynamic leakage‐suppression logic

A 0.06-psRMS SSC-induced jitter, ΔΣ-dithering-free, 6-GHz spread-spectrum clock generator for serial-ATA generation

A 0.1-28 GHz Differential Cascaded Distributed Amplifier in 0.18-μm CMOS Technology

0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

0.2CNT/NiSex composite derived from CNT/MOF-74 as electrode material for electrochemical capacitor and electrochemical sensor

A 0.33-V, 500-kHz, 3.94-[Formula Omitted] 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

A 0.33-V, 500-kHz, 3.94- \mu\hbox 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

A 0.4-to-0.8 V 0.1-to-5 MS/s 10 b two-step SAR ADC with TDC-based fine quantizer in 40-nm CMOS

A 0.5-5.6 GHz Inductorless Wideband LNA with Local Active Feedback

A 0.5-V Biomedical System-on-a-Chip for Intrabody Communication System

A 0.5V 16nW 8.08-ENOB SAR ADC for ultra-low power sensor applications

0.62 Pb/s Real-Time Transmission Over 360 km 7-Core MCFs Using 800 Gb/s Transceivers with Widened C+L Band EDFAs

A 0.75 dB NF LNA in GaAs pHEMT utilizing gate–drain capacitance and gradual inductor

A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductorProject supported by the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 172511KYSB20130108)

A 0.8V, 560fJ/bit, 14Gb/s injection-locked receiver with input duty-cycle distortion tolerable edge-rotating 5/4X sub-rate CDR in 65nm CMOS

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al 2 O 3 /AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Na 0.91 MnO 2 with an Extended Layer Structure and Excellent Pseudocapacitive Behavior as a Cathode Material for Sodium-Ion Batteries

0.94Na1/2Bi1/2TiO3-0.06BaTiO3:TiO2无铅复合陶瓷的结构及退极化温度研究

007 - Association of accelerometer-measured physical activity patterns with cardiovascular diseases and mortality in people with osteoarthritis: a prospective cohort study

0077 Reconstruction of exposed cohort and cumulative dose of radio-contaminated building residents for epidemiological study - Updated information

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