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Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Applied physics letters, 2020-12, Vol.117 (23)

2020

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Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

Crystal growth & design, 2022-03, Vol.22 (3), p.1720-1723

2022

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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Scientific reports, 2019-12, Vol.9 (1), p.20242-5, Article 20242

2019

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Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

Journal of crystal growth, 2021-10, Vol.572, p.126269, Article 126269

2021

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Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan

Frontiers in rehabilitation sciences, 2024, Vol.5, p.1280278-1280278

2024

Volltextzugriff (PDF)

Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications

Applied physics express, 2024-01, Vol.17 (1), p.11006

2024

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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Scientific reports, 2014-06, Vol.4 (1), p.5325-5325, Article 5325

2014

Volltextzugriff (PDF)

Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering

Applied physics express, 2020-06, Vol.13 (6), p.61006

2020

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Electrical properties of Si-doped GaN prepared using pulsed sputtering

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Applied physics letters, 2021-02, Vol.118 (7)

2021

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Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Applied physics express, 2024-01, Vol.17 (1), p.11002

2024

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Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Applied physics letters, 2019-01, Vol.114 (3)

2019

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Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

Crystals (Basel), 2022-04, Vol.12 (4), p.499

2022

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Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

Applied physics express, 2017-10, Vol.10 (10), p.101002

2017

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

APL materials, 2016-08, Vol.4 (8), p.86103-086103-5

2016

Volltextzugriff (PDF)

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Applied physics letters, 2020-11, Vol.117 (19)

2020

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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

Scientific reports, 2017-10, Vol.7 (1), p.12820-6, Article 12820

2017

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Field-effect transistors based on cubic indium nitride

Scientific reports, 2014-02, Vol.4 (1), p.3951-3951, Article 3951

2014

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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10)

2021

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10), p.e0258647-e0258647

2021

Volltextzugriff (PDF)

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

physica status solidi (b), 2018-03, Vol.255 (3), p.n/a

2018

Volltextzugriff (PDF)

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

AIP advances, 2019-07, Vol.9 (7), p.075123-075123-5

2019

Volltextzugriff (PDF)

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Scientific reports, 2017-05, Vol.7 (1), p.2112-5, Article 2112

2017

Volltextzugriff (PDF)

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

APL materials, 2017-07, Vol.5 (7), p.076107-076107-5

2017

Volltextzugriff (PDF)

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Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan

Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications

Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

Field-effect transistors based on cubic indium nitride

Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

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