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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

Materials science in semiconductor processing, 2019-05, Vol.94, p.64-69

2019

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On the assessment of performance and emissions characteristics of a SI engine provided with a laser ignition system

IOP conference series. Materials Science and Engineering, 2017-10, Vol.252 (1), p.12071

2017

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An industrial temperature probe based on SiC diodes

CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.2, p.409-412

2010

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Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices

2024 International Semiconductor Conference (CAS), 2024, p.29-36

2024

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High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Materials science forum, 2018-06, Vol.924, p.967-970

2018

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Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

Materials Science Forum, 2016-05, Vol.858, p.577-581

2016

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High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure

Materials science forum, 2014-02, Vol.778-780, p.1054-1057

2014

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Two Packaging Solutions for High Temperature SiC Diode Sensors

Materials science forum, 2014-02, Vol.778-780, p.1063-1066

2014

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4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments

Materials science forum, 2011, Vol.679-680, p.575-578

2011

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Lean-Mixture Operation of a Passenger Car Gasoline Engine Ignited by Passively Q-Switched Nd:Yag/Cr4+:Yag Laser Spark Plugs

2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2019, p.1-1

2019

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Study on thermal sensitivity of highly inhomogeneous Ni/4H-SiC Schottky diode over a wide temperature range

2017 International Semiconductor Conference (CAS), 2017, p.255-256

2017

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Two parameter extraction solutions for high temperature SiC Schottky diodes - Converging to reality

2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME), 2013, p.181-184

2013

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A Fully Electrically Isolated Package for High Temperature SiC Sensors

Materials science forum, 2012, Vol.717-720, p.925-928

2012

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Constant current versus pulse current for power supplies on high power LED

2015 IEEE 21st International Symposium for Design and Technology in Electronic Packaging (SIITME), 2015, p.263-266

2015

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4H-SiC Schottky contact improvement for temperature sensor applications

CAS 2013 (International Semiconductor Conference), 2013, Vol.2, p.163-166

2013

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High temperature characterization system for silicon carbide devices

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.449-452

2012

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The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.457-460

2012

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High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination

CAS 2011 Proceedings (2011 International Semiconductor Conference), 2011, Vol.2, p.379-382

2011

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An accurate method for measuring very low frequency biosignals

2009 International Semiconductor Conference, 2009, Vol.2, p.423-426

2009

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Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

2007 International Semiconductor Conference, 2007, Vol.2, p.551-554

2007

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Complete analytical submicron MOS transistor model for analogue applications

2008 International Semiconductor Conference, 2008, Vol.2, p.309-312

2008

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Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

2006 International Semiconductor Conference, 2006, Vol.2, p.319-322

2006

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A system to measure reverse recovery time and stored charge at ultrafast power diodes

2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547), 2001, Vol.2, p.473-476 vol.2

2001

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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

On the assessment of performance and emissions characteristics of a SI engine provided with a laser ignition system

An industrial temperature probe based on SiC diodes

Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure

Two Packaging Solutions for High Temperature SiC Diode Sensors

4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments

Lean-Mixture Operation of a Passenger Car Gasoline Engine Ignited by Passively Q-Switched Nd:Yag/Cr4+:Yag Laser Spark Plugs

Study on thermal sensitivity of highly inhomogeneous Ni/4H-SiC Schottky diode over a wide temperature range

Two parameter extraction solutions for high temperature SiC Schottky diodes - Converging to reality

A Fully Electrically Isolated Package for High Temperature SiC Sensors

Constant current versus pulse current for power supplies on high power LED

4H-SiC Schottky contact improvement for temperature sensor applications

High temperature characterization system for silicon carbide devices

The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact

High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination

An accurate method for measuring very low frequency biosignals

Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

Complete analytical submicron MOS transistor model for analogue applications

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

A system to measure reverse recovery time and stored charge at ultrafast power diodes

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