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Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics

Advanced materials (Weinheim), 2021-01, Vol.33 (4), p.n/a

2021

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Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

Advanced functional materials, 2019-06, Vol.29 (25), p.n/a

2019

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Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2

Nature physics, 2019-04, Vol.15 (4), p.347-351

2019

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Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices

Nanoscale, 2023-03, Vol.15 (10), p.4940-4950

2023

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Suspended MoS2 Photodetector Using Patterned Sapphire Substrate

Small (Weinheim an der Bergstrasse, Germany), 2021-10, Vol.17 (43), p.e2100246-n/a

2021

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MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness

Advanced materials (Weinheim), 2020-10, Vol.32 (42), p.e2002704-n/a

2020

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Probing the Physical Origin of Anisotropic Thermal Transport in Black Phosphorus Nanoribbons

Advanced materials (Weinheim), 2018-12, Vol.30 (50), p.e1804928-n/a

2018

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2D Semiconductor Materials and Devices

1, 2019

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Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Advanced functional materials, 2024-05, Vol.34 (21), p.n/a

2024

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Aqueous and mechanical exfoliation, unique properties, and theoretical understanding of MoO3 nanosheets made from free-standing α-MoO3 crystals: Raman mode softening and absorption edge blue shift

Nano research, 2018-03, Vol.11 (3), p.1193-1203

2018

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Thermoelectric Materials: Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics (Adv. Mater. 4/2021)

Advanced materials (Weinheim), 2021-01, Vol.33 (4), p.n/a

2021

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Large-scale monolayer molybdenum disulfide (MoS2) for mid-infrared photonics

Nanophotonics (Berlin, Germany), 2020-11, Vol.9 (16), p.4703-4710

2020

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Recent progress on 2D materials-based artificial synapses

Critical reviews in solid state and materials sciences, 2022-09, Vol.47 (5), p.665-690

2022

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Memory Devices: MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness (Adv. Mater. 42/2020)

Advanced materials (Weinheim), 2020-10, Vol.32 (42), p.n/a

2020

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Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering

Nanophotonics (Berlin, Germany), 2020-08, Vol.9 (8), p.2467-2474

2020

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Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces

RSC advances, 2018-01, Vol.8 (14), p.7744-7752

2018

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Integration of Single-Atom Catalyst with Z-Scheme Heterojunction for Cascade Charge Transfer Enabling Highly Efficient Piezo-Photocatalysis

Advanced science, 2023-10, Vol.10 (28), p.e2303448-e2303448

2023

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Enhanced performance of GaN nanobelt-based photodetectors by means of piezotronic effects

Nano research, 2013-10, Vol.6 (10), p.758-766

2013

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Sublimation-based wafer-scale monolayer WS2 formation via self-limited thinning of few-layer WS2

Nanoscale horizons, 2023-12, Vol.9 (1), p.132-142

2023

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TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio

IEEE photonics technology letters, 2016-04, Vol.28 (8), p.837-840

2016

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Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly β-FeSi2 film on SiO2/Si(100) substrate

Thin solid films, 2012, Vol.520 (6), p.2336-2338

2012

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Transition‐Metal Dichalcogenides: Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition‐Metal Dichalcogenides (Adv. Sci. 10/2020)

Advanced science, 2020-05, Vol.7 (10), p.n/a

2020

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Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition‐Metal Dichalcogenides

Advanced science, 2020-05, Vol.7 (10), p.1902726-n/a

2020

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Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

ACS nano, 2023-02, Vol.17 (3), p.1831-1844

2023

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High-throughput screening of transition metal single atom catalysts anchored on molybdenum disulfide for nitrogen fixation

Nano energy, 2020-02, Vol.68, p.104304, Article 104304

2020

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Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2

Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices

Suspended MoS2 Photodetector Using Patterned Sapphire Substrate

MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness

Probing the Physical Origin of Anisotropic Thermal Transport in Black Phosphorus Nanoribbons

2D Semiconductor Materials and Devices

Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Aqueous and mechanical exfoliation, unique properties, and theoretical understanding of MoO3 nanosheets made from free-standing α-MoO3 crystals: Raman mode softening and absorption edge blue shift

Thermoelectric Materials: Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics (Adv. Mater. 4/2021)

Large-scale monolayer molybdenum disulfide (MoS2) for mid-infrared photonics

Recent progress on 2D materials-based artificial synapses

Memory Devices: MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness (Adv. Mater. 42/2020)

Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering

Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces

Integration of Single-Atom Catalyst with Z-Scheme Heterojunction for Cascade Charge Transfer Enabling Highly Efficient Piezo-Photocatalysis

Enhanced performance of GaN nanobelt-based photodetectors by means of piezotronic effects

Sublimation-based wafer-scale monolayer WS2 formation via self-limited thinning of few-layer WS2

TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio

Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly β-FeSi2 film on SiO2/Si(100) substrate

Transition‐Metal Dichalcogenides: Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition‐Metal Dichalcogenides (Adv. Sci. 10/2020)

Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition‐Metal Dichalcogenides

Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

High-throughput screening of transition metal single atom catalysts anchored on molybdenum disulfide for nitrogen fixation

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