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Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens

New journal of physics, 2022-10, Vol.24 (10), p.103027

2022

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Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

Applied physics letters, 2000-04, Vol.76 (17), p.2403-2405

2000

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Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption

Journal of non-crystalline solids, 2000-05, Vol.266, p.876-883

2000

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Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Applied physics letters, 2000-04, Vol.76 (15), p.1999-2001

2000

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GaN epitaxial lateral overgrowth and optical characterization

Applied physics letters, 1998-08, Vol.73 (9), p.1179-1181

1998

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Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses

Journal of non-crystalline solids, 1999-03, Vol.244 (2-3), p.260-266

1999

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Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

Applied physics letters, 1997-11, Vol.71 (18), p.2662-2664

1997

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Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Applied physics letters, 1997-07, Vol.71 (2), p.231-233

1997

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Optical characteristics of p -type GaN films grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 1996-10, Vol.69 (18), p.2722-2724

1996

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Band gap bowing in GaP1-xNx alloys

Applied physics letters, 1993-07, Vol.63 (2), p.208-210

1993

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Photoinduced integrated-optic devices in rapid thermally annealed chalcogenide glasses

IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.260-270

2005

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Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy

Journal of applied physics, 2002-05, Vol.91 (9), p.5716-5727

2002

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Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Applied physics letters, 1999-02, Vol.74 (7), p.1000-1002

1999

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Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Journal of applied physics, 2001-07, Vol.90 (1), p.252-259

2001

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Polarization study of single color centers in aluminum nitride

Applied physics letters, 2023-04, Vol.122 (17)

2023

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Low loss photoinduced waveguides in rapid thermally annealed films of chalcogenide glasses

Applied physics letters, 1999-01, Vol.74 (1), p.13-15

1999

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Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

Journal of applied physics, 1996-10, Vol.80 (8), p.4609-4614

1996

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Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses

Applied physics letters, 1995-02, Vol.66 (6), p.670-672

1995

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Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

Applied physics letters, 2024-03, Vol.124 (12)

2024

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Tracking the creation of single photon emitters in AlN by implantation and annealing

Optical materials, 2024-10, Vol.156, p.115967, Article 115967

2024

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Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Journal of electronic materials, 1997-03, Vol.26 (3), p.306-310

1997

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Annealing studies of photoluminescence spectra from multiple Er3+ centers in er-implanted GaN

Journal of electronic materials, 1999-03, Vol.28 (3), p.266-274

1999

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The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

Applied physics letters, 1998-04, Vol.72 (16), p.1990-1992

1998

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Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition

Journal of applied physics, 1987-03, Vol.61 (5), p.2011-2016

1987

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Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens

Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

GaN epitaxial lateral overgrowth and optical characterization

Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses

Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Optical characteristics of p -type GaN films grown by plasma-assisted molecular beam epitaxy

Band gap bowing in GaP1-xNx alloys

Photoinduced integrated-optic devices in rapid thermally annealed chalcogenide glasses

Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy

Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Polarization study of single color centers in aluminum nitride

Low loss photoinduced waveguides in rapid thermally annealed films of chalcogenide glasses

Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses

Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

Tracking the creation of single photon emitters in AlN by implantation and annealing

Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Annealing studies of photoluminescence spectra from multiple Er3+ centers in er-implanted GaN

The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition

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