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Effect of passive structure and toroidal rotation on resistive wall mode stability in the EAST tokamak

Chinese physics B, 2014-07, Vol.23 (7), p.523-528

2014

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Optimize Purcell filter design for reducing influence of fabrication variation

Chinese physics B, 2024-05, Vol.33 (6), p.68501

2024

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Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Chinese physics B, 2023-06, Vol.32 (6), p.67505-679

2023

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Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

Chinese physics B, 2022-06, Vol.31 (6), p.68103-792

2022

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Properties of B4C-TiB2 ceramics prepared by spark plasma sintering

中国物理B（英文版）, 2021-03, Vol.30 (3), p.568-574

2021

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Characterization of plasma current quench during disruption in EAST tokamak

Chinese physics B, 2015-02, Vol.24 (2), p.320-324

陈大龙 Granetz Robert 沈飙杨飞钱金平肖炳甲

2015

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Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

Chinese physics B, 2022-01, Vol.31 (2), p.27506-666

2022

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Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Chinese physics B, 2018-04, Vol.27 (4), p.47209

2018

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Properties of B 4 C-TiB 2 ceramics prepared by spark plasma sintering

Chinese physics B, 2021-03, Vol.30 (3), p.38105

2021

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Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

Chinese physics B, 2015-11, Vol.24 (11), p.525-529

陈伟杰韩小标林佳利胡国亨泖铭岗杨亿斌陈杰吴志盛刘扬张佰君

2015

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Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Chinese physics B, 2015-03, Vol.24 (3), p.38503-1-038503-6

2015

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In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

Chinese physics B, 2015-09, Vol.24 (9), p.96103-1-096103-5

2015

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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Chinese physics B, 2015-06, Vol.24 (6), p.68503-1-068503-6

2015

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Generation of cluster states for cavity fields

Chinese physics B, 2008-11, Vol.17 (11), p.4207-4210

2008

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Symmetry and general symmetry groups of the coupled Kadomtsev–Petviashvili equation

Chinese physics B, 2009-06, Vol.18 (6), p.2109-2114, Article 2109

2009

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Observation and analysis of halo current in EAST

Chinese physics B, 2014-06, Vol.23 (6), p.387-391

陈大龙沈飙钱金平孙有文刘广君石同辉庄会东肖炳甲

2014

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Approximate solution for the Klein–Gordon–Schrödinger equation by the homotopy analysis method

Chinese physics B, 2010-03, Vol.19 (3), p.030401-030401

2010

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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Chinese physics B, 2014-02, Vol.23 (2), p.27102-1-027102-5

2014

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Effect of passive plates on vertical instability in the EAST tokamak

Chinese physics B, 2012-08, Vol.21 (8), p.323-329

刘广君万宝年钱金平孙有文肖炳甲沈飚罗正平戟翔陈树亮

2012

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Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well Project supported by the National Natural Science Foundation of China (Grant No. 11574362)

Chinese physics B, 2018-04, Vol.27 (4)

2018

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Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Chinese physics B, 2013-06, Vol.22 (6), p.67104-1-067104-4

2013

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Characterization of plasma current quench during disruption in EAST tokamakProject supported by the National Magnetic Confinement Fusion Science Program of China (Grant Nos. 2014GB103000 and 2013GB102000) and the National Natural Science Foundation of China (Grant No. 11205199 and 11205192)

Chinese physics B, 2015-02, Vol.24 (2)

2015

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The stability margin on EAST tokamak

Chinese physics B, 2009-06, Vol.18 (6), p.2432-2440

2009

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Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPEProject supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant No. 2011CB301903), the Ph.D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the International Sci. & Tech. Collaboration Program of

Chinese physics B, 2015-10, Vol.24 (11)

2015

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In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant No. 2011CB301903), the Ph.D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012D

Chinese physics B, 2015-08, Vol.24 (9)

2015

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Effect of passive structure and toroidal rotation on resistive wall mode stability in the EAST tokamak

Optimize Purcell filter design for reducing influence of fabrication variation

Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

Properties of B4C-TiB2 ceramics prepared by spark plasma sintering

Characterization of plasma current quench during disruption in EAST tokamak

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Properties of B 4 C-TiB 2 ceramics prepared by spark plasma sintering

Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Generation of cluster states for cavity fields

Symmetry and general symmetry groups of the coupled Kadomtsev–Petviashvili equation

Observation and analysis of halo current in EAST

Approximate solution for the Klein–Gordon–Schrödinger equation by the homotopy analysis method

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Effect of passive plates on vertical instability in the EAST tokamak

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well Project supported by the National Natural Science Foundation of China (Grant No. 11574362)

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Characterization of plasma current quench during disruption in EAST tokamakProject supported by the National Magnetic Confinement Fusion Science Program of China (Grant Nos. 2014GB103000 and 2013GB102000) and the National Natural Science Foundation of China (Grant No. 11205199 and 11205192)

The stability margin on EAST tokamak

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