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A 0.002-mm2, 2.9-μW Pulse-Frequency-Modulation based Temperature Sensor with 40-mK Resolution

2024 IEEE International Symposium on Circuits and Systems (ISCAS), 2024, p.1-4

2024

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A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2022-03, Vol.69 (3), p.749-753

2022

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A 0.06-mm2 Current-Mode Noise-Shaping SAR based Temperature-to-Digital Converter with a 4.9-nJ Energy/Conversion

2023 IEEE Custom Integrated Circuits Conference (CICC), 2023, p.1-2

2023

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A 0.08%/V 32.3-ppm/°C 36.6-kHz Unregulated Current-Reuse Ring Oscillator With VGS-Ratio-Based Compensation Using One-Type-Only Resistor

IEEE journal of solid-state circuits, 2024-11, Vol.59 (11), p.3767-3779

2024

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A 0.1 ppm Successive Approximation Frequency-Temperature Compensation Method for Temperature Compensated Crystal Oscillators (TCXO)

2009 WRI World Congress on Computer Science and Information Engineering, 2009, Vol.3, p.493-498

2009

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A 0.12 mm ^ 7.4 \mu W Micropower Temperature Sensor With an Inaccuracy of \pm0.2 ^C (3 \sigma) From -30 ^C to 125 ^C

IEEE journal of solid-state circuits, 2011-07, Vol.46 (7), p.1693-1700

2011

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A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement

2021 Symposium on VLSI Circuits, 2021, p.1-2

2021

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A 0.25-mm CMOS, 7-ppm/°C, 8-mA quiescent current, ±5-mA output current low-dropout voltage regulator

2013 Proceedings of the ESSCIRC (ESSCIRC), 2013, p.97-100

2013

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A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm

2020 IEEE Symposium on VLSI Circuits, 2020, p.1-2

2020

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A 0.2nJ/sample 0.01mm2 ring oscillator based temperature sensor for on-chip thermal management

International Symposium on Quality Electronic Design (ISQED), 2013, p.696-702

2013

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A 0.3-1.2 V Schottky-Based CMOS ZTC Voltage Reference

IEEE transactions on circuits and systems. II, Express briefs, 2019-10, Vol.66 (10), p.1663-1667

2019

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A 0.3-28-GHz Frequency Range, 1.2-dB Noise Figure, Cascode Distributed LNA With Wide Temperature Range for Satellite Communications

IEEE microwave and wireless technology letters (Print), 2024-11, p.1-4

2024

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A 0.3 lx-1.4 Mlx Monolithic Silicon Nanowire Light-to-Digital Converter With Temperature-Independent Offset Cancellation

IEEE journal of solid-state circuits, 2020-02, Vol.55 (2), p.378-391

2020

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A 0.32-V 151-nW Voltage Reference for Smart IoT Applications

2022 IEEE International Conference on Smart Internet of Things (SmartIoT), 2022, p.36-41

2022

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A ±0.4°C (3σ) −70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

2012 IEEE International Solid-State Circuits Conference, 2012, p.204-206

2012

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A 0.4-V 0.0294-mm ^ Resistor-Based Temperature Sensor Achieving \pm 0.24 ^ C p2p Inaccuracy From - 40 ^ C to 125 ^ C and 385 \mathrm\cdot\mathrm^ Resolution FoM in 65-nm CMOS

IEEE journal of solid-state circuits, 2023-05, p.1-11

2023

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A 0.4 V, - 77.2 dBm WuRX With Digitalized Loop-Calibration and Temperature-Compensation

IEEE transactions on microwave theory and techniques, 2024-06, p.1-10

2024

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A 0.4-V Supply Curvature-Corrected Reference Generator With 84.5-ppm/°C Average Temperature Coefficient Within −40 °C to 130 °C

IEEE transactions on circuits and systems. II, Express briefs, 2017-04, Vol.64 (4), p.362-366

2017

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A 0.4-V Wide Temperature Range All-MOSFET Subthreshold Voltage Reference With 0.027%/V Line Sensitivity

IEEE transactions on circuits and systems. II, Express briefs, 2018-08, Vol.65 (8), p.969-973

2018

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A +0.44°C/−0.4°C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO

IEEE transactions on circuits and systems. I, Regular papers, 2021-03, Vol.68 (3), p.1102-1113

2021

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A ±0.48°C (3σ) Inaccuracy BJT-Based Temperature Sensor With 241 μs Conversion Time for Display Driver IC in 40 nm CMOS

IEEE access, 2023, Vol.11, p.132843-132851

2023

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A 0.5-1.7 V Efficient and PVT-Invariant Constant Subthreshold gm Reference Circuit in CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2022-10, Vol.69 (10), p.3915-3926

2022

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0.5 ¼m Pitch Wafer-to-wafer Hybrid Bonding with SiCN Bonding Interface for Advanced Memory

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1110-1114

2023

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A 0.5/spl mu/A precision CMOS floating-gate analog reference

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005, 2005, p.286-598 Vol. 1

2005

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A 0.5 V, 112 nW CMOS temperature sensor for RFID food monitoring application

2016 24th Iranian Conference on Electrical Engineering (ICEE), 2016, p.1433-1438

2016

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A 0.002-mm2, 2.9-μW Pulse-Frequency-Modulation based Temperature Sensor with 40-mK Resolution

A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS

A 0.06-mm2 Current-Mode Noise-Shaping SAR based Temperature-to-Digital Converter with a 4.9-nJ Energy/Conversion

A 0.08%/V 32.3-ppm/°C 36.6-kHz Unregulated Current-Reuse Ring Oscillator With VGS-Ratio-Based Compensation Using One-Type-Only Resistor

A 0.1 ppm Successive Approximation Frequency-Temperature Compensation Method for Temperature Compensated Crystal Oscillators (TCXO)

A 0.12 mm ^ 7.4 \mu W Micropower Temperature Sensor With an Inaccuracy of \pm0.2 ^C (3 \sigma) From -30 ^C to 125 ^C

A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement

A 0.25-mm CMOS, 7-ppm/°C, 8-mA quiescent current, ±5-mA output current low-dropout voltage regulator

A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm

A 0.2nJ/sample 0.01mm2 ring oscillator based temperature sensor for on-chip thermal management

A 0.3-1.2 V Schottky-Based CMOS ZTC Voltage Reference

A 0.3-28-GHz Frequency Range, 1.2-dB Noise Figure, Cascode Distributed LNA With Wide Temperature Range for Satellite Communications

A 0.3 lx-1.4 Mlx Monolithic Silicon Nanowire Light-to-Digital Converter With Temperature-Independent Offset Cancellation

A 0.32-V 151-nW Voltage Reference for Smart IoT Applications

A ±0.4°C (3σ) −70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

A 0.4-V 0.0294-mm ^ Resistor-Based Temperature Sensor Achieving \pm 0.24 ^ C p2p Inaccuracy From - 40 ^ C to 125 ^ C and 385 \mathrm\cdot\mathrm^ Resolution FoM in 65-nm CMOS

A 0.4 V, - 77.2 dBm WuRX With Digitalized Loop-Calibration and Temperature-Compensation

A 0.4-V Supply Curvature-Corrected Reference Generator With 84.5-ppm/°C Average Temperature Coefficient Within −40 °C to 130 °C

A 0.4-V Wide Temperature Range All-MOSFET Subthreshold Voltage Reference With 0.027%/V Line Sensitivity

A +0.44°C/−0.4°C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO

A ±0.48°C (3σ) Inaccuracy BJT-Based Temperature Sensor With 241 μs Conversion Time for Display Driver IC in 40 nm CMOS

A 0.5-1.7 V Efficient and PVT-Invariant Constant Subthreshold gm Reference Circuit in CMOS

0.5 ¼m Pitch Wafer-to-wafer Hybrid Bonding with SiCN Bonding Interface for Advanced Memory

A 0.5/spl mu/A precision CMOS floating-gate analog reference

A 0.5 V, 112 nW CMOS temperature sensor for RFID food monitoring application

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