UB Paderborn / Katalog / Suche / in CDI

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-01, Vol.25 (1), p.11-16

2007

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ThemaEngineering, Multidisciplinary

ThemaPhysics, Applied

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Dynamic supplier selection problem considering full truck load in probabilistic environment

CNT coated thread micro-electro-mechanical system for finger proprioception sensing

Urban growth modeling of Ciliwung and Cisadane watersheds within Bogor municipality by using integrated Ca-Markov and frequency ratio

Reservoir characterization using stochastic seismic inversion in “K” gas field, Bonaparte Basin

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell

Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

Biomimetic strain-sensing microstructure for improved strain sensor: fabrication results and optical characterization

A physicochemical study of sugar palm (Arenga Pinnata) starch films plasticized by glycerol and sorbitol

Effect of plasticizer on moisture sorption isotherm of sugar palm (Arenga Pinnata) starch film

Studies of plastic crystal gel polymer electrolytes based on poly(vinylidene chloride-co-acrylonitrile)

High-Performance GaNAsSb/GaAs 1.55-μm Waveguide Photodetector

GaNAsSb material for ultrafast microwave photoconductive switching application

High-speed picosecond pulse response GaNAsSb p - i - n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy

Component Integration Effects in 4-Junction Solar Cells with Dilute Nitride 1eV Subcell

Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications

GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μ m grown by molecular beam epitaxy

Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3μm application

Multigigabit 1.3μm GaNAsSb∕GaAs Photodetectors

1.55 μ m GaAs∕GaNAsSb∕GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Molecular beam epitaxial growth of indium antimonide and its characterization

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