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Time domain hybrid method for coupling analysis of multi-conductor transmission lines on the lossy dielectric layer excited by ambient wave

Wuli xuebao, 2020-03, Vol.69 (6), p.60701

2020

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Coupling analysis of transmission lines excited by space electromagnetic fields based on time domain hybrid method using parallel technique

Chinese physics B, 2020-08, Vol.29 (9), p.90701

2020

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Observation of valley-selective microwave transport in photonic crystals

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Thermal shock resistance of Cr/CrN/Cr/CrAlN multilayer anti-erosion coating

Surface & coatings technology, 2023-10, Vol.470, p.129776, Article 129776

2023

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Failure mechanisms of CrN and CrAlN coatings for solid particle erosion resistance

Vacuum, 2022-10, Vol.204, p.111313, Article 111313

2022

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Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

Chinese physics B, 2023-03, Vol.32 (3), p.38502-670

2023

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Band alignment between GaN and ZrO2 formed by atomic layer deposition

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

Chinese physics B, 2021-02, Vol.30 (2), p.28502-640

2021

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Worm-Based Diagnosis Combining Microfluidics toward Early Cancer Screening

Micromachines (Basel), 2024-04, Vol.15 (4), p.484

2024

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Far infrared properties of OH megamaser host galaxies

Journal of astrophysics and astronomy, 2023-06, Vol.44 (1), Article 53

2023

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Effects of hydrogen charging and deformation on tensile properties of a multi-component alloy for nuclear applications

Tungsten, 2022-09, Vol.4 (3), p.212-218

2022

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Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

Applied physics letters, 2015-03, Vol.106 (9)

2015

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High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Chinese physics letters, 2015-11, Vol.32 (11), p.118501-118501

2015

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Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

Applied physics express, 2015-04, Vol.8 (4), p.41001

2015

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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Chinese physics B, 2015-04, Vol.24 (4), p.048503-1-048503-5

2015

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High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

Chinese physics letters, 2015-03, Vol.32 (3), p.117-120

房玉龙冯志红李成明宋旭波尹甲运周幸叶王元刚吕元杰蔡树军

2015

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Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.473-479

2011

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Chinese physics B, 2015-08, Vol.24 (8), p.534-538

吕元杰冯志红顾国栋尹甲运房玉龙王元刚谭鑫周幸叶林兆军冀子武蔡树军

2015

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Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Chinese physics letters, 2011-12, Vol.28 (12), p.127202-1-127202-4

2011

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Thermodynamics of Sc-H and Sc-D Systems: Experimental and Theoretical Studies

Journal of fusion energy, 2013-04, Vol.32 (2), p.254-257

2013

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Laser cooling and trapping of ytterbium atoms

Frontiers of physics, 2009-06, Vol.4 (2), p.160-164

2009

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Optimization for the high-Q monopole mode in electrically driven single-cell photonic crystal laser cavity

Journal of the Optical Society of America. B, Optical physics, 2007-01, Vol.24 (1), p.37

2007

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Graphene Thermal Emitter with Enhanced Joule Heating and Localized Light Emission in Air

ACS photonics, 2019-08, Vol.6 (8), p.2117-2125

2019

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Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering

Solid-state electronics, 2014-11, Vol.101, p.33-37

2014

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Time domain hybrid method for coupling analysis of multi-conductor transmission lines on the lossy dielectric layer excited by ambient wave

Coupling analysis of transmission lines excited by space electromagnetic fields based on time domain hybrid method using parallel technique

Observation of valley-selective microwave transport in photonic crystals

Thermal shock resistance of Cr/CrN/Cr/CrAlN multilayer anti-erosion coating

Failure mechanisms of CrN and CrAlN coatings for solid particle erosion resistance

Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

Band alignment between GaN and ZrO2 formed by atomic layer deposition

Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

Worm-Based Diagnosis Combining Microfluidics toward Early Cancer Screening

Far infrared properties of OH megamaser host galaxies

Effects of hydrogen charging and deformation on tensile properties of a multi-component alloy for nuclear applications

Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Thermodynamics of Sc-H and Sc-D Systems: Experimental and Theoretical Studies

Laser cooling and trapping of ytterbium atoms

Optimization for the high-Q monopole mode in electrically driven single-cell photonic crystal laser cavity

Graphene Thermal Emitter with Enhanced Joule Heating and Localized Light Emission in Air

Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering

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