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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

AIP advances, 2019-07, Vol.9 (7), p.075116-075116-6

2019

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In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Advances in materials science and engineering, 2023, Vol.2023, p.1-12

2023

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Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

AIP advances, 2021-06, Vol.11 (6), p.065130-065130-10

2021

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Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Advances in materials science and engineering, 2022, Vol.2022, p.1-7

2022

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Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

International journal of analytical chemistry, 2022, Vol.2022, p.1-6

2022

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Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

International journal of analytical chemistry, 2021-12, Vol.2021, p.3402411-9

2021

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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Micromachines (Basel), 2021-04, Vol.12 (5), p.502

2021

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Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Advances in materials science and engineering, 2021, Vol.2021, p.1-10

2021

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Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Beilstein journal of nanotechnology, 2016, Vol.7 (1), p.1783-1793

2016

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Deep wet etching of fused silica glass for hollow capillary optical leaky waveguides in microfluidic devices

Journal of micromechanics and microengineering, 2001-05, Vol.11 (3), p.257-262

2001

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Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Advances in OptoElectronics (Hindawi), 2017-01, Vol.2017

2017

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Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Advances in OptoElectronics (Hindawi), 2014-01, Vol.2014, p.1-5

2014

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Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Applied surface science, 2023-02, Vol.611, p.155769, Article 155769

2023

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Lehren und Lernen: 10 Tipps aus der Praxis

Fouckhardt, Henning

1. Aufl. 2017 edition., 2017

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Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113331, Article 113331

2022

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Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

Beilstein journal of nanotechnology, 2011-06, Vol.2 (1), p.333-338

2011

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Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-09, Vol.39 (5)

2021

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High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers

Optical materials, 2021-08, Vol.118, p.111230, Article 111230

2021

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Lithography-Free Technology for the Preparation of Digital Microfluidic

International journal of analytical chemistry, 2022-05, Vol.2022

2022

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Photonik: Eine Einfuhrung in die integrierte Optoelektronik und technische Optik

Fouckhardt, Henning

1994th edition, 2013

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Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering

Surface & coatings technology, 2011-07, Vol.205, p.S419-S424

2011

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Evanescent-field fiber sensor for the water content in lubricating oils with sensitivity increase by dielectrophoresis

Sensors and actuators. A. Physical., 2012-09, Vol.184, p.93-97

2012

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An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures

Physics letters. A, 2001-07, Vol.286 (2), p.199-204

2001

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Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Applied surface science, 2015-02, Vol.328, p.120-124

2015

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Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Advances in OptoElectronics (Hindawi), 2018-01, Vol.2018, p.1-8

2018

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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Deep wet etching of fused silica glass for hollow capillary optical leaky waveguides in microfluidic devices

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Lehren und Lernen: 10 Tipps aus der Praxis

Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement

High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers

Lithography-Free Technology for the Preparation of Digital Microfluidic

Photonik: Eine Einfuhrung in die integrierte Optoelektronik und technische Optik

Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering

Evanescent-field fiber sensor for the water content in lubricating oils with sensitivity increase by dielectrophoresis

An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures

Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

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