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Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP

Semiconductor science and technology, 2006-06, Vol.21 (6), p.813-817

2006

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Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors

Journal of applied physics, 2012-02, Vol.111 (3), p.033713-033713-6

2012

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Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

Physical review. B, Condensed matter and materials physics, 2004-01, Vol.69 (3), Article 033303

2004

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Composting paper and grass clippings with anaerobically treated palm oil mill effluent

International journal of recycling of organic waste in agriculture, 2016-09, Vol.5 (3), p.221-230

2016

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Enhanced intersubband absorption in stepped double barrier quantum wells

Electronics letters, 2002-05, Vol.38 (11), p.529-530

2002

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Modeling of intraband absorption for quantum dot-in-well structures with low computational cost

Journal of physics. Conference series, 2010-07, Vol.242 (1), p.012013

2010

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Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy

Semiconductor science and technology, 1991-01, Vol.6 (1), p.45-53

1991

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Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells

Semiconductor science and technology, 2004-11, Vol.19 (11), p.1263-1267

2004

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A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulators

Semiconductor science and technology, 1995-09, Vol.10 (9), p.1283-1286, Article 1283

1995

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Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector

Applied physics letters, 2005-11, Vol.87 (19)

2005

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Resonant cavity-enhanced (RCE) photodetector based on Ga(In)Sb for gas-sensing applications

Semiconductor science and technology, 1995-07, Vol.10 (7), p.1017-1021

1995

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GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy

Applied physics letters, 1989-03, Vol.54 (10), p.922-924

1989

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Long-wavelength GaAs/AlAs distributed Bragg reflectors for use in GaSb-based resonant cavity detectors

Electronics letters, 1995-02, Vol.31 (3), p.200-202

1995

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Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

Semiconductor science and technology, 1996-01, Vol.11 (1), p.34-38

1996

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Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

Journal of applied physics, 2003-05, Vol.93 (10), p.6065-6067

2003

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GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy

Applied physics letters, 1989-03, Vol.54 (13), p.1241-1243

1989

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Growth of GaSb by MOVPE

Semiconductor science and technology, 1988-04, Vol.3 (4), p.315-320

1988

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Room temperature photoluminescence at 4.5 μ m from InAsN

Journal of applied physics, 2008-03, Vol.103 (6), p.063520-063520-4

2008

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Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells

Journal of applied physics, 2003-09, Vol.94 (5), p.3222-3228

2003

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Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE

Semiconductor science and technology, 1993-01, Vol.8 (1S), p.S380-S385

1993

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THERMOPHOTOVOLTAICS: CAN THEY MAKE A SIGNIFICANT CONTRIBUTION ?

Energy & environment (Essex, England), 2000-01, Vol.11 (1), p.81-91

Haywood, S.K.

2000

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Growth of InAs by MOVPE using TBAs and TMIn

Journal of electronic materials, 1990-08, Vol.19 (8), p.783-788

1990

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Growth of InAs by MOVPE: A comparative study using arsine, tertiarybutylarsine and phenylarsine

Journal of crystal growth, 1989-09, Vol.97 (2), p.489-496

1989

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Strain reconstruction of the valence band in Ga1-xInxSb/GaSb quantum wells

Surface science, 1990-04, Vol.228 (1-3), p.270-274

1990

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Hole trapping and interface state generation during bias-temperature stress of SiO2 layers

Applied physics letters, 1985-01, Vol.47 (4), p.381-383

1985

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Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP

Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors

Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

Composting paper and grass clippings with anaerobically treated palm oil mill effluent

Enhanced intersubband absorption in stepped double barrier quantum wells

Modeling of intraband absorption for quantum dot-in-well structures with low computational cost

Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy

Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells

A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulators

Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector

Resonant cavity-enhanced (RCE) photodetector based on Ga(In)Sb for gas-sensing applications

GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy

Long-wavelength GaAs/AlAs distributed Bragg reflectors for use in GaSb-based resonant cavity detectors

Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy

Growth of GaSb by MOVPE

Room temperature photoluminescence at 4.5 μ m from InAsN

Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells

Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE

THERMOPHOTOVOLTAICS: CAN THEY MAKE A SIGNIFICANT CONTRIBUTION ?

Growth of InAs by MOVPE using TBAs and TMIn

Growth of InAs by MOVPE: A comparative study using arsine, tertiarybutylarsine and phenylarsine

Strain reconstruction of the valence band in Ga1-xInxSb/GaSb quantum wells

Hole trapping and interface state generation during bias-temperature stress of SiO2 layers

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