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Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing

Thin solid films, 2012, Vol.520 (19), p.6207-6214

2012

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Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon

Applied surface science, 2012, Vol.260, p.54-58

2012

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Effect of pressure annealing on formation of light-emitting Si nanocrystals in Si rich SiO2

Physica status solidi. A, Applications and materials science, 2009, Vol.206 (1), p.78-83

2009

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Pressure assisted evolution of defects in silicon

Crystal research and technology (1979), 2003, Vol.38 (12), p.1058-1062

2003

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Magnetic Structure of UPb3

September 16, 2021, Vol.13, Number 1, p.415-418

2021

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The structures prepared by high temperature-pressure treatment of Cz-Si heavily implanted with He

Journal of alloys and compounds, 2005, Vol.401 (1-2), p.231-237

2005

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Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

Physica. B, Condensed matter, 2003, Vol.340-42, p.687-691

2003

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Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures

Physica. B, Condensed matter, 2000, Vol.293 (1-2), p.44-48

2000

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Effect of high temperature: pressure on SOI structure

Crystal engineering, 2002, Vol.5 (3-4), p.155-161

2002

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Modification of the SOI-like structures by annealing under high hydrostatic pressure

Journal of alloys and compounds, 2004, Vol.362, p.269-274

2004

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Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

Physica status solidi. A, Applied research, 2003, Vol.199 (2), p.207-213

2003

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Structural and optical properties of high temperature-high pressure treated Si: H

Journal of alloys and compounds, 2004, Vol.382, p.160-164

2004

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The effect of high temperature-high pressure treatment on the annealing behavior of VO center in neutron-irradiated Czochralski silicon

Physica. B, Condensed matter, 2001, Vol.308-10, p.313-316

2001

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Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Physica. B, Condensed matter, 2001, Vol.308-10, p.820-822

2001

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Czochralski silicon characterization by using thermoelectric power measurements at high pressure

Physica. B, Condensed matter, 2003, Vol.340-42, p.1026-1030

2003

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Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Microelectronic engineering, 2003, Vol.66 (1-4), p.367-372

2003

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Porous-like silicon prepared from Si:H annealed at high argon pressure

Physica status solidi. A. Applied research, 2003, Vol.197 (1), p.236-240

2003

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Defect-related diffusion of hydrogen in silicon

Physica. B, Condensed matter, 2003, Vol.340-42, p.659-663

2003

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Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

Physica. B, Condensed matter, 2001, Vol.308-10, p.317-320

2001

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Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si

Journal of alloys and compounds, 1999, Vol.286 (1-2), p.241-245

1999

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Effect of stress on interface transformation in thin semiconducting layers

Thin solid films, 2000, Vol.380 (1-2), p.117-119

2000

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Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

Computational materials science, 2001, Vol.21 (4), p.515-525

2001

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Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

Journal of alloys and compounds, 2001, Vol.328 (1-2), p.181-186

2001

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Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures

Physica status solidi. B. Basic research, 2003, Vol.235 (1), p.75-78

2003

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Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

Crystal research and technology (1979), 2003, Vol.38 (3-5), p.394-398

2003

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Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing

Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon

Effect of pressure annealing on formation of light-emitting Si nanocrystals in Si rich SiO2

Pressure assisted evolution of defects in silicon

Magnetic Structure of UPb3

The structures prepared by high temperature-pressure treatment of Cz-Si heavily implanted with He

Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures

Effect of high temperature: pressure on SOI structure

Modification of the SOI-like structures by annealing under high hydrostatic pressure

Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

Structural and optical properties of high temperature-high pressure treated Si: H

The effect of high temperature-high pressure treatment on the annealing behavior of VO center in neutron-irradiated Czochralski silicon

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Czochralski silicon characterization by using thermoelectric power measurements at high pressure

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Porous-like silicon prepared from Si:H annealed at high argon pressure

Defect-related diffusion of hydrogen in silicon

Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si

Effect of stress on interface transformation in thin semiconducting layers

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures

Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

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