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Pustulose exanthématique aiguë généralisée à la méthylprednisolone

Annales de dermatologie et de vénéréologie, 2001, Vol.128 (3), p.241-243

2001

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Numerical simulation of impact ionization in Ge / Al x Ga 1 − x As avalanche photodiode

Applied physics letters, 2010-08, Vol.97 (7), p.073501-073501-3

Chia, C. K.

2010

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Le modèle culinaire français: Diffusion, adaptations, transformations, oppositions dans le monde (xvii-xxie siècles)

2021

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Infrared spectroscopy and modeling of co-crystalline CO 2 ·C 2 H 2 aerosol particles. I. The formation and decomposition of co-crystalline CO 2 ·C 2 H 2 aerosol particles

The Journal of chemical physics, 2012-03, Vol.136 (9), p.094509-094509-9

2012

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Detection of ship emissions from distillate fuel operation single-particle profiling of polycyclic aromatic hydrocarbons

Environmental science: atmospheres, 2023-08, Vol.3 (8), p.1134-1144

2023

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Correlation between saturation magnetization and surface morphological features in Zn 1 − x Cr x O thin films

Applied physics letters, 2011-02, Vol.98 (5), p.052503-052503-3

2011

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Pour la recherche urbaine

2020

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Atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1−x /In 0.53 Ga 0.47 As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Applied physics letters, 2012-02, Vol.100 (6), p.062905-062905-4

2012

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Dispositifs et outils de gouvernance territoriale

Norois. Environnement, aménagement, société, 2008, Vol.209 (2008/4)

2008

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Selective disordering of InAs/InGaAs dots-in-a-well structure patternedwith sol-gel derived SiO 2 strips imprinted by soft mold technique

Applied physics letters, 2008-08, Vol.93 (7), p.071907-071907-3

2008

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Role of Al x Ga 1− x As buffer layer in heterogeneous integration of GaAs/Ge

Journal of applied physics, 2011-03, Vol.109 (6), p.066106-066106-3

2011

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Time-resolved photoluminescence of isoelectronic traps in Zn Se 1 − x Te x semiconductor alloys

Applied physics letters, 2008-12, Vol.93 (24), p.241909-241909-3

2008

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Defect structure of highly Zn-doped Li Nb O 3 single crystal revealedby extended x-ray absorption spectra

Applied physics letters, 2008-04, Vol.92 (16), p.161902-161902-3

2008

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Effects of AlAs interfacial layer on material and optical propertiesof Ga As ∕ Ge ( 100 ) epitaxy

Applied physics letters, 2008-04, Vol.92 (14), p.141905-141905-3

2008

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Saturated dot density of In As ∕ Ga As self-assembled quantum dots grownat high growth rate

Applied physics letters, 2007-04, Vol.90 (16), p.161906-161906-3

2007

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Raman scattering of longitudinal-optical-phonon-plasmon couplingin Cl-doped ZnSe under high pressure

Journal of applied physics, 2007-12, Vol.102 (12), p.123510-123510-6

2007

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Characterizing x Ba ( Mg 1 ∕ 3 Ta 2 ∕ 3 ) O 3 + ( 1 − x ) Ba ( Mg 1 ∕ 3 Nb 2 ∕ 3 ) O 3 microwave ceramics using extended x-ray absorption fine structure method

Applied physics letters, 2006-06, Vol.88 (24), p.242907-242907-3

2006

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Switching Characteristics of TaOx-Based One Diode-One Resistor for Crossbar Memory Application

2016-05

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L’exploitation agricole familiale : mythe ou réalité ? Avant-Propos

Agricultures (Montrouge), 2006, Vol.15 (6), p.1-1

2006

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Photoluminescence studies of type-II diluted magnetic semiconductor Zn Mn Te ∕ Zn Se quantum dots

Applied physics letters, 2006-12, Vol.89 (26), p.263111-263111-3

2006

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Erratum: "Enhanced photoluminescence of InAs self-assembledquantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method" [ Appl. Phys. Lett. 85 , 567 ( 2004 ) ]

Applied physics letters, 2005-01, Vol.86 (5), p.059903-059903-1

2005

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Group-V intermixing in In As ∕ In P quantum dots

Applied physics letters, 2005-01, Vol.86 (5), p.051905-051905-3

2005

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Optical characterization of ZnSe epilayers and Zn Cd Se ∕ Zn Se quantum wells grown on Ge ∕ Ge 0.95 Si 0.05 ∕ Ge 0.9 Si 0.1 ∕ Si virtual substrates

Journal of applied physics, 2006-03, Vol.99 (6), p.063506-063506-6

2006

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Evolution of mesenteric artery blood flow in healthy premature neonates

Nutrición hospitalaria : organo oficial de la Sociedad Española de Nutrición Parenteral y Enteral, 2010-04, Vol.25 (2), p.319-319

2010

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Methylprednisolone-induced acute generalized exanthematous pustulosis

Annales de dermatologie et de vénéréologie, 2001-03, Vol.128 (3 Pt 1), p.241

2001

Volltextzugriff (PDF)

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Pustulose exanthématique aiguë généralisée à la méthylprednisolone

Numerical simulation of impact ionization in Ge / Al x Ga 1 − x As avalanche photodiode

Le modèle culinaire français: Diffusion, adaptations, transformations, oppositions dans le monde (xvii-xxie siècles)

Infrared spectroscopy and modeling of co-crystalline CO 2 ·C 2 H 2 aerosol particles. I. The formation and decomposition of co-crystalline CO 2 ·C 2 H 2 aerosol particles

Detection of ship emissions from distillate fuel operation single-particle profiling of polycyclic aromatic hydrocarbons

Correlation between saturation magnetization and surface morphological features in Zn 1 − x Cr x O thin films

Pour la recherche urbaine

Atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1−x /In 0.53 Ga 0.47 As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Dispositifs et outils de gouvernance territoriale

Selective disordering of InAs/InGaAs dots-in-a-well structure patternedwith sol-gel derived SiO 2 strips imprinted by soft mold technique

Role of Al x Ga 1− x As buffer layer in heterogeneous integration of GaAs/Ge

Time-resolved photoluminescence of isoelectronic traps in Zn Se 1 − x Te x semiconductor alloys

Defect structure of highly Zn-doped Li Nb O 3 single crystal revealedby extended x-ray absorption spectra

Effects of AlAs interfacial layer on material and optical propertiesof Ga As ∕ Ge ( 100 ) epitaxy

Saturated dot density of In As ∕ Ga As self-assembled quantum dots grownat high growth rate

Raman scattering of longitudinal-optical-phonon-plasmon couplingin Cl-doped ZnSe under high pressure

Characterizing x Ba ( Mg 1 ∕ 3 Ta 2 ∕ 3 ) O 3 + ( 1 − x ) Ba ( Mg 1 ∕ 3 Nb 2 ∕ 3 ) O 3 microwave ceramics using extended x-ray absorption fine structure method

Switching Characteristics of TaOx-Based One Diode-One Resistor for Crossbar Memory Application

L’exploitation agricole familiale : mythe ou réalité ? Avant-Propos

Photoluminescence studies of type-II diluted magnetic semiconductor Zn Mn Te ∕ Zn Se quantum dots

Erratum: "Enhanced photoluminescence of InAs self-assembledquantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method" [ Appl. Phys. Lett. 85 , 567 ( 2004 ) ]

Group-V intermixing in In As ∕ In P quantum dots

Optical characterization of ZnSe epilayers and Zn Cd Se ∕ Zn Se quantum wells grown on Ge ∕ Ge 0.95 Si 0.05 ∕ Ge 0.9 Si 0.1 ∕ Si virtual substrates

Evolution of mesenteric artery blood flow in healthy premature neonates

Methylprednisolone-induced acute generalized exanthematous pustulosis

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