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Silicon heterojunction solar cells: Excellent candidate for low light illuminations

Solar energy materials and solar cells, 2024-08, Vol.274, p.113001, Article 113001

2024

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Solar Cells

Silicon, From Sand to Chips 2, 2024, p.67-96

Vignes, Alain

2024

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Model Based Junction Temperature Profile Control of SiC MOSFETs in DC Power Cycling for Accurate Reliability Assessments

IEEE transactions on industry applications, 2024, p.1-9

2024

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Switching Transient Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation

IEEE transactions on power electronics, 2024-05, p.1-10

2024

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Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon

IEEE electron device letters, 2024-07, p.1-1

2024

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High-Bandwidth Silicon Traveling-Wave Modulator Using Distributed Micro-Capacitors

Journal of lightwave technology, 2024, p.1-7

2024

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

IEEE electron device letters, 2024-08, Vol.45 (8), p.1492-1495

2024

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Self-Powered Solar-Blind Photodetector With Low Dark Current and Ultrahigh On/Off Ratio Based on Vertically Aligned Si/SiC Nanowire Arrays p-n Heterojunction

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4173-4179

2024

Volltextzugriff (PDF)

Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization

IEEE electron device letters, 2024-08, Vol.45 (8), p.1421-1424

2024

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Magnetic field enhanced critical current in Ge–Si nanowire Josephson junctions

Applied physics letters, 2024-07, Vol.125 (1)

2024

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Short-circuit Dynamic Model of SiC MOSFET Considering Failure Modes

IEEE transactions on power electronics, 2024-07, p.1-13

2024

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Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Journal of instrumentation, 2024-07, Vol.19 (7), p.P07022

2024

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A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance

IEEE transactions on power electronics, 2024-06, p.1-12

2024

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Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4489-4497

2024

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A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices

IEEE electron device letters, 2024-07, Vol.45 (7), p.1261-1264

2024

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The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes

Journal of applied physics, 2024-06, Vol.135 (23)

2024

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Online Short-Term Aging Status Prediction of SiC MOSFETs for DC Solid-State Power Controller using Adaptive Variable Time-Steps Metabolic Gray Model

IEEE transactions on power electronics, 2024-06, p.1-14

2024

Volltextzugriff (PDF)

Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

IEEE electron device letters, 2024-08, Vol.45 (8), p.1405-1408

2024

Volltextzugriff (PDF)

Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Angewandte Chemie International Edition, 2024-08, Vol.63 (33), p.e202403333-n/a

International ed. in English, 2024

Volltextzugriff (PDF)

Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-09, Vol.1066, p.169645, Article 169645

2024

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Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN

Journal of applied physics, 2024-06, Vol.135 (23)

2024

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Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Nature communications, 2024-05, Vol.15 (1), p.4619-9, Article 4619

2024

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Preparation and Performance Evaluation of a Miniature High-Temperature Heat Flux Sensor With Centralized Thermal Insulation Structure

IEEE transactions on instrumentation and measurement, 2024, Vol.73, p.1-8

2024

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An Online Correction Method for Inaccuracy of Junction Temperature Monitoring Caused by Degradation of SiC MOSFETs

IEEE journal of emerging and selected topics in power electronics, 2024, p.1-1

2024

Volltextzugriff (PDF)

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

The Journal of chemical physics, 2024-07, Vol.161 (4)

2024

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Silicon heterojunction solar cells: Excellent candidate for low light illuminations

Solar Cells

Model Based Junction Temperature Profile Control of SiC MOSFETs in DC Power Cycling for Accurate Reliability Assessments

Switching Transient Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon

High-Bandwidth Silicon Traveling-Wave Modulator Using Distributed Micro-Capacitors

1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

Self-Powered Solar-Blind Photodetector With Low Dark Current and Ultrahigh On/Off Ratio Based on Vertically Aligned Si/SiC Nanowire Arrays p-n Heterojunction

Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization

Magnetic field enhanced critical current in Ge–Si nanowire Josephson junctions

Short-circuit Dynamic Model of SiC MOSFET Considering Failure Modes

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance

Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction

A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices

The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes

Online Short-Term Aging Status Prediction of SiC MOSFETs for DC Solid-State Power Controller using Adaptive Variable Time-Steps Metabolic Gray Model

Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose

Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Preparation and Performance Evaluation of a Miniature High-Temperature Heat Flux Sensor With Centralized Thermal Insulation Structure

An Online Correction Method for Inaccuracy of Junction Temperature Monitoring Caused by Degradation of SiC MOSFETs

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

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