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Considerations for Ultimate CMOS Scaling

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1813-1828

Kuhn, K. J.

2012

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IEEE_Xplore

A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2809-2817

2012

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IEEE_Xplore

Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.278-287

2014

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IEEE_Xplore

Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3405-3417

2010

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IEEE_Xplore

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: Modeling

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2468-2475

2012

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IEEE_Xplore

Theory of the Junctionless Nanowire FET

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2903-2910

2011

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IEEE_Xplore

A Junctionless Nanowire Transistor With a Dual-Material Gate

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1829-1836

2012

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IEEE_Xplore

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4578-4590

2019

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High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.927-934

2013

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Unveiling Thermal Effects on Sn-Doped β -Ga2O3 Schottky Barrier Diodes on Sapphire for High-Temperature Power Electronics

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1529

2024

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Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and Characterization

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4067-4073

2011

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IEEE_Xplore

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3285-3290

2013

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IEEE_Xplore

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2761-2767

2013

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IEEE_Xplore

A Comparative Study of Different Physics-Based NBTI Models

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916

2013

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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2729-2737

2011

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IEEE_Xplore

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3327-3333

2012

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IEEE_Xplore

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301

2012

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IEEE_Xplore

Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3200-3211

2021

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IEEE_Xplore

High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic Applications

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1034-1039

2013

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IEEE_Xplore

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2856-2860

2012

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IEEE_Xplore

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs-Part I: Model Description and Single Trap Analysis in Tunnel-FETs

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2795-2801

2013

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IEEE_Xplore

RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1388-1396

2011

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IEEE_Xplore

Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4074-4078

2011

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IEEE_Xplore

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3042-3047

2011

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IEEE_Xplore

Guest Editorial Special Issue on Vacuum Electronic Devices, "From Mega to Nano: Beyond One Century of Vacuum Electronics"

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.2639-2642

Paoloni, Claudio

2023

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IEEE_Xplore

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Considerations for Ultimate CMOS Scaling

A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis

Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives

Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: Modeling

Theory of the Junctionless Nanowire FET

A Junctionless Nanowire Transistor With a Dual-Material Gate

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation

Unveiling Thermal Effects on Sn-Doped β -Ga2O3 Schottky Barrier Diodes on Sapphire for High-Temperature Power Electronics

Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and Characterization

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

A Comparative Study of Different Physics-Based NBTI Models

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I

High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic Applications

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs-Part I: Model Description and Single Trap Analysis in Tunnel-FETs

RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Guest Editorial Special Issue on Vacuum Electronic Devices, "From Mega to Nano: Beyond One Century of Vacuum Electronics"

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