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Wafer-Scale Graphene Integrated Circuit

Science (American Association for the Advancement of Science), 2011-06, Vol.332 (6035), p.1294-1297

2011

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A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of ± 0.15°C (3σ) From ―55°C to 125°C

IEEE journal of solid-state circuits, 2013, Vol.48 (1), p.292-301

2013

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Generation of Fock states in a superconducting quantum circuit

Nature (London), 2008-07, Vol.454 (7202), p.310-314

2008

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160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With Psat in Excess of 10 dBm

IEEE transactions on microwave theory and techniques, 2013, Vol.61 (2), p.939-947

2013

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A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking

IEEE journal of solid-state circuits, 2012, Vol.47 (1), p.107-116

2012

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A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset

IEEE transactions on microwave theory and techniques, 2008-05, Vol.56 (5), p.1092-1104

2008

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Current-Controlled Magnetic Domain-Wall Nanowire Shift Register

Science (American Association for the Advancement of Science), 2008-04, Vol.320 (5873), p.209-211

2008

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Widely Tunable 4th Order Switched Gm-C Band-Pass Filter Based on N-Path Filters

IEEE journal of solid-state circuits, 2012, Vol.47 (12), p.3105-3119

2012

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A Full 360 ^ Vector-Sum Phase Shifter With Very Low RMS Phase Error Over a Wide Bandwidth

IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1626-1634

2012

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W-band multiport substrate-integrated waveguide circuits

IEEE transactions on microwave theory and techniques, 2006-02, Vol.54 (2), p.625-632

2006

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A 60 μW 60 nV/√Hz readout front-end for portable biopotential acquisition systems

IEEE journal of solid-state circuits, 2007-05, Vol.42 (5), p.1100-1110

2007

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High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3592-3595

2013

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IEEE_Xplore

An X-and Ku-Band 8-Element Phased-Array Receiver in 0.18-μm SiGe BiCMOS Technology

IEEE journal of solid-state circuits, 2008-06, Vol.43 (6), p.1360-1371

2008

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A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

IEEE journal of solid-state circuits, 2012-03, Vol.47 (3), p.709-721

2012

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500 °C Bipolar Integrated OR/NOR Gate in 4H-SiC

IEEE electron device letters, 2013, Vol.34 (9), p.1091-1093

2013

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Design criteria for the RF section of UHF and microwave passive RFID transponders

IEEE transactions on microwave theory and techniques, 2005-09, Vol.53 (9), p.2978-2990

2005

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IEEE_Xplore

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

IEEE electron device letters, 2014-07, Vol.35 (7), p.693-695

2014

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A 4 GHz Continuous-Time ΔΣ ADC With 70 dB DR and - 74 dBFS THD in 125 MHz BW

IEEE journal of solid-state circuits, 2011, Vol.46 (12), p.2857-2868

2011

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Gm-boosted common-gate LNA and differential colpitts VCO/QVCO in 0.18-μm CMOS

IEEE journal of solid-state circuits, 2005-12, Vol.40 (12), p.2609-2619

2005

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High performance bulk-heterojunction organic solar cells fabricated with non-halogenated solvent processing

Organic electronics, 2011-09, Vol.12 (9), p.1465-1470

2011

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A 20-mW 640-MHz CMOS continuous-time ΣΔ ADC with 20-MHz signal bandwidth, 80-dB dynamic range and 12-bit ENOB

IEEE journal of solid-state circuits, 2006, Vol.41 (12), p.2641-2649

2006

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Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180° Hybrid With Different Input Frequencies

IEEE transactions on microwave theory and techniques, 2012-08, Vol.60 (8), p.2473-2485

2012

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A Sub-0.2 ^/ hr Bias Drift Micromechanical Silicon Gyroscope With Automatic CMOS Mode-Matching

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1593-1608

2009

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IEEE_Xplore

A Third-Order DT ΔΣ Modulator Using Noise-Shaped Bi-Directional Single-Slope Quantizer

IEEE journal of solid-state circuits, 2011, Vol.46 (12), p.2882-2891

2011

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Accounting for variability in the design of circuits with organic thin-film transistors

Organic electronics, 2014-04, Vol.15 (4), p.937-942

2014

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Wafer-Scale Graphene Integrated Circuit

A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of ± 0.15°C (3σ) From ―55°C to 125°C

Generation of Fock states in a superconducting quantum circuit

160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With Psat in Excess of 10 dBm

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking

A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset

Current-Controlled Magnetic Domain-Wall Nanowire Shift Register

Widely Tunable 4th Order Switched Gm-C Band-Pass Filter Based on N-Path Filters

A Full 360 ^ Vector-Sum Phase Shifter With Very Low RMS Phase Error Over a Wide Bandwidth

W-band multiport substrate-integrated waveguide circuits

A 60 μW 60 nV/√Hz readout front-end for portable biopotential acquisition systems

High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

An X-and Ku-Band 8-Element Phased-Array Receiver in 0.18-μm SiGe BiCMOS Technology

A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

500 °C Bipolar Integrated OR/NOR Gate in 4H-SiC

Design criteria for the RF section of UHF and microwave passive RFID transponders

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

A 4 GHz Continuous-Time ΔΣ ADC With 70 dB DR and - 74 dBFS THD in 125 MHz BW

Gm-boosted common-gate LNA and differential colpitts VCO/QVCO in 0.18-μm CMOS

High performance bulk-heterojunction organic solar cells fabricated with non-halogenated solvent processing

A 20-mW 640-MHz CMOS continuous-time ΣΔ ADC with 20-MHz signal bandwidth, 80-dB dynamic range and 12-bit ENOB

Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180° Hybrid With Different Input Frequencies

A Sub-0.2 ^/ hr Bias Drift Micromechanical Silicon Gyroscope With Automatic CMOS Mode-Matching

A Third-Order DT ΔΣ Modulator Using Noise-Shaped Bi-Directional Single-Slope Quantizer

Accounting for variability in the design of circuits with organic thin-film transistors

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