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Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

Journal of crystal growth, 2015-10, Vol.428, p.93-97

2015

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Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

Applied physics letters, 2022-01, Vol.120 (5)

2022

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GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.340-345

2022

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Comparing Oncoplastic Breast Conserving Surgery with Mastectomy and Immediate Breast Reconstruction: Case-Matched Patient Reported Outcomes

Journal of plastic, reconstructive & aesthetic surgery, 2017-10, Vol.70 (10), p.1377-1385

2017

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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.352-359

2022

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Anti-vascular endothelial growth factor therapy in breast cancer

International Journal of Molecular Sciences, 2014-12, Vol.15 (12), p.23024-23041

2014

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The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

Journal of physics. Condensed matter, 2021-05, Vol.33 (25)

2021

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Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Semiconductor science and technology, 2020-07, Vol.35 (7), p.75004

2020

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Journal of thermal analysis and calorimetry, 2018-08, Vol.133 (2), p.1099-1107

2018

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Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.386-392

2024

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Journal of crystal growth, 2021-01, Vol.554, p.125963, Article 125963

2021

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Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

Journal of luminescence, 2018-11, Vol.203, p.127-134

2018

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Photoluminescence of Multiple GaN/AlN Quantum Wells

Optoelectronics, instrumentation, and data processing, 2021-09, Vol.57 (5), p.526-531

2021

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Peroxisomes in the mouse parotid glands: An in-depth morphological and molecular analysis

Annals of anatomy, 2021-11, Vol.238, p.151778-151778, Article 151778

2021

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Luminescence and superradiance in electron-beam-excited AlxGa1−xN

Journal of applied physics, 2014-09, Vol.116 (11)

2014

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Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12005

2021

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Freshwater salinization syndrome limits management efforts to improve water quality

Frontiers in environmental science, 2023-09, Vol.11, p.1-20

2023

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Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

Journal of physics. Conference series, 2018, Vol.993 (1)

2018

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Do patients with gastroesophageal reflux disease exhibit compromised bone quality prior to proton pump inhibitor therapy?

Bone Reports, 2021-06, Vol.14, p.101095-101095, Article 101095

2021

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Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures

Technical physics letters, 2021-09, Vol.47 (9), p.692-695

2021

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Displacement and velocity estimation of the earthquake response signals measured with accelerometers

IOP conference series. Materials Science and Engineering, 2020-12, Vol.997 (1), p.12051

2020

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Moving photoluminescence band in AlGaN GaN heterostructures

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85010

2015

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Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.485-491

2020

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The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Physica Status Solidi. B: Basic Solid State Physics, 2015-09, Vol.252 (9), p.1960-1965

2015

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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Journal of physics. Conference series, 2017, Vol.816 (1)

2017

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Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

Comparing Oncoplastic Breast Conserving Surgery with Mastectomy and Immediate Breast Reconstruction: Case-Matched Patient Reported Outcomes

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Anti-vascular endothelial growth factor therapy in breast cancer

The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

Photoluminescence of Multiple GaN/AlN Quantum Wells

Peroxisomes in the mouse parotid glands: An in-depth morphological and molecular analysis

Luminescence and superradiance in electron-beam-excited AlxGa1−xN

Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Freshwater salinization syndrome limits management efforts to improve water quality

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

Do patients with gastroesophageal reflux disease exhibit compromised bone quality prior to proton pump inhibitor therapy?

Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures

Displacement and velocity estimation of the earthquake response signals measured with accelerometers

Moving photoluminescence band in AlGaN GaN heterostructures

Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation

The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

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