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Terrace morphology on fused silica surfaces by Ar+ ion bombardment with Mo co-deposition

Applied physics letters, 2018-07, Vol.113 (3)

2018

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The effect of surface-step-terrace on energy storage density and working temperature of BaZr0.2Ti0.8O3 epitaxial films

Applied physics letters, 2024-03, Vol.124 (11)

2024

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High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

Applied physics letters, 2011-12, Vol.99 (24), p.242103-242103-3

2011

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Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

Applied physics letters, 2008-08, Vol.93 (5), p.053109-053109-3

2008

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Terrace width dependence of cobalt silicide nucleation on Si(111)- ( 7 × 7 )

Applied physics letters, 2006-01, Vol.88 (2), p.023121-023121-3

2006

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Epitaxial growth and properties of La0.7Sr0.3MnO3 thin films with micrometer wide atomic terraces

Applied physics letters, 2015-07, Vol.107 (2)

2015

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Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Epitaxial growth and properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films with micrometer wide atomic terraces

Applied physics letters, 2015-07, Vol.107 (2)

2015

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Etch-pit initiation by dissolved oxygen on terraces of H-Si(111)

Applied physics letters, 1997-09, Vol.71 (12), p.1679-1681

1997

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Terrace grading of SiGe for high-quality virtual substrates

Applied physics letters, 2002-12, Vol.81 (25), p.4775-4777

2002

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Critical effects of substrate terraces and steps morphology on the growth mode of epitaxial SrRuO3 films

Applied physics letters, 2004-09, Vol.85 (11), p.1981-1983

2004

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Initial stage of the overgrowth of InP on InAs∕InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges

Applied physics letters, 2006-07, Vol.89 (3)

2006

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Synthesis and electrical conductivity of multilayer silicene

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Real-time detection of ambient oxidation of steps and terraces on Si(111)-(1×1):H by scanning force microscopy

Applied physics letters, 2004-11, Vol.85 (18), p.4157-4159

2004

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Realization of an atomically flat BaSnO3(001) substrate with SnO2 termination

Applied physics letters, 2017-12, Vol.111 (23)

2017

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Monitoring Si growth on Ag(111) with scanning tunneling microscopy reveals that silicene structure involves silver atoms

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Homoepitaxial diamond films with large terraces

Applied physics letters, 1996-02, Vol.68 (9), p.1220-1222

1996

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Initial stage of the overgrowth of InP on In As ∕ In P ( 001 ) quantum dots: Formation of InP terraces driven by preferential nucleation onquantum dot edges

Applied physics letters, 2006-07, Vol.89 (3), p.031923-031923-3

2006

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Controlled epitaxial graphene growth within removable amorphous carbon corrals

Applied physics letters, 2014-07, Vol.105 (2)

2014

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The correlation of epitaxial graphene properties and morphology of SiC (0001)

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

Applied physics letters, 1993-01, Vol.62 (2), p.143-145

1993

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Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs

Applied physics letters, 1994-09, Vol.65 (11), p.1418-1420

1994

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Analysis of terrace size fluctuations of B-induced stripe structures on the Si (001) surface

Applied physics letters, 1998-08, Vol.73 (5), p.605-607

1998

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Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

Applied physics letters, 1993-08, Vol.63 (9), p.1228-1230

1993

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Lateral motion of terrace width distributions during step-flow growth

Applied physics letters, 1992-08, Vol.61 (6), p.645-647

1992

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Terrace morphology on fused silica surfaces by Ar+ ion bombardment with Mo co-deposition

The effect of surface-step-terrace on energy storage density and working temperature of BaZr0.2Ti0.8O3 epitaxial films

High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

Terrace width dependence of cobalt silicide nucleation on Si(111)- ( 7 × 7 )

Epitaxial growth and properties of La0.7Sr0.3MnO3 thin films with micrometer wide atomic terraces

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Epitaxial growth and properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films with micrometer wide atomic terraces

Etch-pit initiation by dissolved oxygen on terraces of H-Si(111)

Terrace grading of SiGe for high-quality virtual substrates

Critical effects of substrate terraces and steps morphology on the growth mode of epitaxial SrRuO3 films

Initial stage of the overgrowth of InP on InAs∕InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges

Synthesis and electrical conductivity of multilayer silicene

Real-time detection of ambient oxidation of steps and terraces on Si(111)-(1×1):H by scanning force microscopy

Realization of an atomically flat BaSnO3(001) substrate with SnO2 termination

Monitoring Si growth on Ag(111) with scanning tunneling microscopy reveals that silicene structure involves silver atoms

Homoepitaxial diamond films with large terraces

Initial stage of the overgrowth of InP on In As ∕ In P ( 001 ) quantum dots: Formation of InP terraces driven by preferential nucleation onquantum dot edges

Controlled epitaxial graphene growth within removable amorphous carbon corrals

The correlation of epitaxial graphene properties and morphology of SiC (0001)

Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs

Analysis of terrace size fluctuations of B-induced stripe structures on the Si (001) surface

Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

Lateral motion of terrace width distributions during step-flow growth

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