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A 0.023–12 GHz ultra-wideband frequency synthesizer with FOMT of −251.8 dB

Microelectronics, 2022-02, Vol.120, Article 105357

2022

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A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS

2011 IEEE Radio and Wireless Symposium, 2011, p.70-73

2011

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(0, 1)-Matrix Completion, Majorization, and Their Applications in Smart Grids

Mo, Yanfang

2019

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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

Digest. International Electron Devices Meeting, 2002, p.667-670

2002

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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

2002

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A 0.13μm dual-band common-gate LNA using active post distortion for mobile WiMAX

Microelectronics, 2014-07, Vol.45 (7), p.921-929

2014

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A 0.18 μm CMOS 10-Gb/S multichannel transmitter with duty-cycle correction

ASIC, 2003. Proceedings. 5th International Conference on, 2003, Vol.1, p.534-536 Vol.1

2003

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A 0.4-to-0.8 V 0.1-to-5 MS/s 10 b two-step SAR ADC with TDC-based fine quantizer in 40-nm CMOS

Microelectronics, 2023-11, Vol.141, p.105974, Article 105974

2023

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0.5 V 1.3 GHz voltage controlled ring oscillator

2009 IEEE 8th International Conference on ASIC, 2009, p.1181-1184

2009

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0.53 J /100 ps Nd:YAG single-rod six-pass amplifier

2018 International Conference Laser Optics (ICLO), 2018, p.53-53

2018

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A 0.55THz Y-Vector Network Configured Beam Steering Phased Array in CMOS Technology

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.587-590

2018

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A 0.6-5.5GHz E-PHEMT broadband high-gain LNA designed by ADS

2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE), 2017, p.437-440

2017

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A 0.6-V 1.6-GHz 8-phase all digital PLL using multi-phase based TDC

IEICE Electronics Express, 2016, Vol.13 (2), p.20150950-20150950

2016

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A 0.6-V Tail-Less Inverter Stacking Amplifier with 0.96 PEF

2019 Symposium on VLSI Circuits, 2019, p.C144-C145

2019

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A 0.65-V 10-bit 320-kS/s SAR-ADC with Charge Average and Skip Switching Algorithm

2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2018, p.98-101

2018

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A 0.6V 10-bit 20kHz Capacitor Splitting Bypass Window SAR ADC for Biomedical Applications

2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2023, p.256-260

2023

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0.7-6 GHz Programable Gain Push-Pull Driver PA Based on Dual-Loop Biases

2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2022, p.213-216

2022

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0.7-V supply, 21-nW All–MOS voltage reference using a MOS-Only current-driven reference core in digital CMOS

Microelectronics, 2020-08, Vol.102, p.104841, Article 104841

2020

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A 0.7V Fully-on-Chip Pseudo-Digital LDO Regulator with 6.3μA Quiescent Current and 100mV Dropout Voltage in 0.18-μm CMOS

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, p.206-209

2018

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A 0.8–3.2 GHz PLL with wide frequency division ratio range

Microelectronics, 2022-10, Vol.128, p.105579, Article 105579

2022

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A 0.9 V 2.72 µW 200 kS/s SAR ADC with ladder-based time-domain comparator

IEICE Electronics Express, 2017, Vol.14 (5), p.20170003-20170003

2017

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A 0.98mW fractional-N ADPLL using 10b isolated constant-slope DTC with FOM of −246dB for IoT applications in 65nm CMOS

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.246-248

2018

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A 0-to-35mA NMOS Capacitor-Less LDO with Dual-Loop Regulation Achieving 3ns Response Time and 1pF-to-10nF Loading Range

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.253-256

2023

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04e

Kurki, Seppo Heikki Juhani

2001

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06-P-14 - Rapid synthesis of high quality MCM-41 silica via ultrasound irradiation

Studies in Surface Science and Catalysis, 2001, Vol.135, p.201-201

2001

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A 0.023–12 GHz ultra-wideband frequency synthesizer with FOMT of −251.8 dB

A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS

(0, 1)-Matrix Completion, Majorization, and Their Applications in Smart Grids

0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

A 0.13μm dual-band common-gate LNA using active post distortion for mobile WiMAX

A 0.18 μm CMOS 10-Gb/S multichannel transmitter with duty-cycle correction

A 0.4-to-0.8 V 0.1-to-5 MS/s 10 b two-step SAR ADC with TDC-based fine quantizer in 40-nm CMOS

0.5 V 1.3 GHz voltage controlled ring oscillator

0.53 J /100 ps Nd:YAG single-rod six-pass amplifier

A 0.55THz Y-Vector Network Configured Beam Steering Phased Array in CMOS Technology

A 0.6-5.5GHz E-PHEMT broadband high-gain LNA designed by ADS

A 0.6-V 1.6-GHz 8-phase all digital PLL using multi-phase based TDC

A 0.6-V Tail-Less Inverter Stacking Amplifier with 0.96 PEF

A 0.65-V 10-bit 320-kS/s SAR-ADC with Charge Average and Skip Switching Algorithm

A 0.6V 10-bit 20kHz Capacitor Splitting Bypass Window SAR ADC for Biomedical Applications

0.7-6 GHz Programable Gain Push-Pull Driver PA Based on Dual-Loop Biases

0.7-V supply, 21-nW All–MOS voltage reference using a MOS-Only current-driven reference core in digital CMOS

A 0.7V Fully-on-Chip Pseudo-Digital LDO Regulator with 6.3μA Quiescent Current and 100mV Dropout Voltage in 0.18-μm CMOS

A 0.8–3.2 GHz PLL with wide frequency division ratio range

A 0.9 V 2.72 µW 200 kS/s SAR ADC with ladder-based time-domain comparator

A 0.98mW fractional-N ADPLL using 10b isolated constant-slope DTC with FOM of −246dB for IoT applications in 65nm CMOS

A 0-to-35mA NMOS Capacitor-Less LDO with Dual-Loop Regulation Achieving 3ns Response Time and 1pF-to-10nF Loading Range

04e

06-P-14 - Rapid synthesis of high quality MCM-41 silica via ultrasound irradiation

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