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Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Journal of crystal growth, 1994-10, Vol.143 (3), p.115-123

1994

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Alternate method to produce quantum wires using dislocation slipping

Solid-state electronics, 1994-04, Vol.37 (4), p.567-569

1994

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Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Applied physics letters, 1992-05, Vol.60 (20), p.2481-2483

1992

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Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

MRS proceedings, 1995, Vol.378, p.863-868, Article 863

1995

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Characterization of (357439) 2004 BL86 on its close approach to Earth in 2015

Astronomy and astrophysics (Berlin), 2015-09, Vol.581, p.A3

2015

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Charged defects at the interface between directly bonded silicon wafers

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5502-5506

1997

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Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties

IEE proceedings. Optoelectronics, 2003-02, Vol.150 (1), p.64

2003

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Constraints on supersymmetric grand unified theories from cosmology

Journal of cosmology and astroparticle physics, 2005-03, Vol.2005 (3), p.4-4

2005

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CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-11, Vol.12 (6), p.3018-3022

1994

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Crystallization characteristics of the Mg-rich metallic glasses in the Ca–Mg–Zn system

Journal of alloys and compounds, 2013-03, Vol.552, p.88-97

2013

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D-term inflation, cosmic strings, and consistency with cosmic microwave background measurements

Physical review letters, 2005-01, Vol.94 (1), p.011303.1-011303.4, Article 011303

2005

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Deep etch X-ray lithography using silicon-gold masks fabricated by deep etch UV lithography and electroforming

Journal of micromechanics and microengineering, 1995-09, Vol.5 (3), p.203-208

1995

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Direct Wafer Bonding of Preamorphized Silicon Wafers

MRS proceedings, 1995, Vol.378, p.869-874, Article 869

1995

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Dislocation slipping, a new technique to produce step-like surfaces, compatible with quantum confinement sizes

Journal de physique. III (Les Ulis), 1993-09, Vol.3 (9), p.1803-1808

1993

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EBIC investigations of thick SOI layers

Revue de physique appliquée, 1988-03, Vol.23 (3), p.281-288

1988

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The Effect of Controllable Optically-Induced Random Anisotropic Disorder On The Magnetotransport In A Two-Dimensional Electron System

Physics of Semiconductors; Part A, 2005, Vol.772, p.461-462

2005

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Elastic model for arrays of stacking fault tetrahedra produced under electron irradiation

Philosophical magazine (London, England : 1945), 1976-02, Vol.33 (2), p.293-303

1976

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Evidence by spectroscopic ellipsometry of optical property change in pulsed laser deposited NiO films when heated in air at Neel temperature

Applied physics. A, Materials science & processing, 2004-09, Vol.79 (4-6), p.1439-1443

2004

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Evidence of radial-axial motion couplings in an rf stored ion cloud

Applied physics. B, Lasers and optics, 1998-02, Vol.66 (2), p.191-196

1998

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Experimental study of the efficiency of storage in an RF ion trap

Rapid communications in mass spectrometry, 1995, Vol.9 (15), p.1580-1583

1995

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Extending high-finesse cavity techniques to the far-infrared

Review of scientific instruments, 2013-07, Vol.84 (7), p.075107-075107

2013

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and centres in KCl and KBr doped with either carbonates or sulphates

Journal of physics. Condensed matter, 1996-08, Vol.8 (33), p.6105-6112

1996

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Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

Applied physics letters, 2005-05, Vol.86 (19), p.191901-191901-3

2005

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How generic is cosmic string formation in supersymmetric grand unified theories

Physical review. D, 2003-11, Vol.68 (10), Article 103514

2003

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The K2ZrF6 wetting process : effect of surface chemistry on the ability of a SiC-fiber preform to be impregnated by aluminum

Metallurgical transactions. A, Physical metallurgy and materials science, 1991-09, Vol.22 (9), p.2133-2139

1991

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Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Alternate method to produce quantum wires using dislocation slipping

Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

Characterization of (357439) 2004 BL86 on its close approach to Earth in 2015

Charged defects at the interface between directly bonded silicon wafers

Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties

Constraints on supersymmetric grand unified theories from cosmology

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

Crystallization characteristics of the Mg-rich metallic glasses in the Ca–Mg–Zn system

D-term inflation, cosmic strings, and consistency with cosmic microwave background measurements

Deep etch X-ray lithography using silicon-gold masks fabricated by deep etch UV lithography and electroforming

Direct Wafer Bonding of Preamorphized Silicon Wafers

Dislocation slipping, a new technique to produce step-like surfaces, compatible with quantum confinement sizes

EBIC investigations of thick SOI layers

The Effect of Controllable Optically-Induced Random Anisotropic Disorder On The Magnetotransport In A Two-Dimensional Electron System

Elastic model for arrays of stacking fault tetrahedra produced under electron irradiation

Evidence by spectroscopic ellipsometry of optical property change in pulsed laser deposited NiO films when heated in air at Neel temperature

Evidence of radial-axial motion couplings in an rf stored ion cloud

Experimental study of the efficiency of storage in an RF ion trap

Extending high-finesse cavity techniques to the far-infrared

and centres in KCl and KBr doped with either carbonates or sulphates

Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

How generic is cosmic string formation in supersymmetric grand unified theories

The K2ZrF6 wetting process : effect of surface chemistry on the ability of a SiC-fiber preform to be impregnated by aluminum

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