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Ohmic Contacts to Gallium Nitride-Based Structures

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.317-321

2020

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Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

Journal of physics. Conference series, 2021-11, Vol.2052 (1), p.12057

2021

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Distributions of silicon implanted in GaN epitaxial layers

Journal of physics. Conference series, 2020-10, Vol.1658 (1), p.12012

2020

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Profiles of ion-doped layers on gallium arsenide

Journal of physics. Conference series, 2020-10, Vol.1658 (1), p.12049

2020

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Compact model of a Schottky diode on GaN

Journal of physics. Conference series, 2019-10, Vol.1352 (1), p.12018

2019

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Technology for forming micro devices based on gallium nitride

IOP conference series. Materials Science and Engineering, 2020-09, Vol.939 (1), p.12082

2020

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Non-alloyed ohmic Cr/Pt/Au contacts to GaN based structures

IOP conference series. Materials Science and Engineering, 2018-11, Vol.441 (1), p.12045

2018

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Improvements in the performance of the n+ cap-layer GaN in the formation of transistor structures based on AlGaN / GaN

IOP conference series. Materials Science and Engineering, 2018-11, Vol.441 (1), p.12065

2018

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Selective oxidation of AlGaAs aperture layers of a Vertical-cavity surface-emitting laser with a generation wavelength of 850 nm

Journal of physics. Conference series, 2021-11, Vol.2052 (1), p.12051

2021

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Methods for processing structures based on solid solutions of A III B V compounds

IOP conference series. Materials Science and Engineering, 2019-11, Vol.656 (1), p.12060

2019

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Methods for processing structures based on solid solutions of AIIIBV compounds

IOP conference series. Materials Science and Engineering, 2019-11, Vol.656 (1)

2019

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The fabrication technology of VCSELs emitting in the 1.55 μm waveband

Journal of physics. Conference series, 2020-10, Vol.1658 (1), p.12069

2020

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On the photon annealing of silicon-implanted gallium-nitride layers

Semiconductors (Woodbury, N.Y.), 2016-06, Vol.50 (6), p.832-838

2016

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Gas-sensitive layers based on fractal-percolation structures

Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1499-1503

2014

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Method of regular optical marks in the pyrometry of heated gas flows

Journal of optical technology, 2006-05, Vol.73 (5), p.362

2006

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The Use of a Vector Circuit Analyzer to Measure the Parameters of Microwave pin-Diodes

Measurement techniques, 2014-02, Vol.56 (11), p.1290-1295

2014

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Peculiarities of Gate Design and Influence on PHEMT Characteristics

2006 16th International Crimean Microwave and Telecommunication Technology, 2006, Vol.2, p.635-636

2006

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Check tests on composite materials, produced by winding, using reference specimens

Mechanics of composite materials, 1987-11, Vol.22 (6), p.775-780

1987

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Effects of ion implantation on the structures of silicon dioxide films made by various methods

Journal of applied spectroscopy, 1981-02, Vol.34 (2), p.237-241

1981

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Effect of laser irradiation on the structure of silicon dioxide films with implanted phosphorus ions

Journal of applied spectroscopy, 1982-03, Vol.36 (3), p.296-298

1982

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Remote triggering of air-gap discharge by a femtosecond laser filament and postfilament at distances up to 80 m

Applied physics letters, 2021-07, Vol.119 (4)

2021

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Nanopatterning of thin amorphous vanadium oxide films by oxidation scanning probe lithography

Applied surface science, 2024-06, Vol.658, p.159869, Article 159869

2024

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Estimating coal mine dump stability from its natural oscillations (based on seismic monitoring at the Kolyvan anthracite deposit, Novosibirsk region)

Russian geology and geophysics, 2023-05, Vol.64 (5), p.623-631

2023

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Atomic Layer Deposition Synthesis of thin Films of Vanadium Oxides in a Reducing Hydrogen Atmosphere

Journal of structural chemistry, 2024, Vol.65 (10), p.2073-2087

2024

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Laboratory ECR Source of Light Ions

Physics of atomic nuclei, 2022-12, Vol.85 (12), p.2040-2042

2022

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Ohmic Contacts to Gallium Nitride-Based Structures

Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

Distributions of silicon implanted in GaN epitaxial layers

Profiles of ion-doped layers on gallium arsenide

Compact model of a Schottky diode on GaN

Technology for forming micro devices based on gallium nitride

Non-alloyed ohmic Cr/Pt/Au contacts to GaN based structures

Improvements in the performance of the n+ cap-layer GaN in the formation of transistor structures based on AlGaN / GaN

Selective oxidation of AlGaAs aperture layers of a Vertical-cavity surface-emitting laser with a generation wavelength of 850 nm

Methods for processing structures based on solid solutions of A III B V compounds

Methods for processing structures based on solid solutions of AIIIBV compounds

The fabrication technology of VCSELs emitting in the 1.55 μm waveband

On the photon annealing of silicon-implanted gallium-nitride layers

Gas-sensitive layers based on fractal-percolation structures

Method of regular optical marks in the pyrometry of heated gas flows

The Use of a Vector Circuit Analyzer to Measure the Parameters of Microwave pin-Diodes

Peculiarities of Gate Design and Influence on PHEMT Characteristics

Check tests on composite materials, produced by winding, using reference specimens

Effects of ion implantation on the structures of silicon dioxide films made by various methods

Effect of laser irradiation on the structure of silicon dioxide films with implanted phosphorus ions

Remote triggering of air-gap discharge by a femtosecond laser filament and postfilament at distances up to 80 m

Nanopatterning of thin amorphous vanadium oxide films by oxidation scanning probe lithography

Estimating coal mine dump stability from its natural oscillations (based on seismic monitoring at the Kolyvan anthracite deposit, Novosibirsk region)

Atomic Layer Deposition Synthesis of thin Films of Vanadium Oxides in a Reducing Hydrogen Atmosphere

Laboratory ECR Source of Light Ions

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