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Effect of annealing atmosphere p O2 on leakage current in 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 piezoelectric thin films

Applied physics letters, 2017-04, Vol.110 (16)

2017

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Effect of annealing atmosphere pO2 on leakage current in 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 piezoelectric thin films

Applied physics letters, 2017-04, Vol.110 (16)

2017

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Microstructure and dielectric properties of Ba1−xSrxTiO3 films grown on LaAlO3 substrates

Applied physics letters, 2000-08, Vol.77 (8), p.1200-1202

2000

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Effect of the misalignment between the applied and internal magnetic fields on the critical currents of "tilted coated conductors"

Applied physics letters, 2005-03, Vol.86 (13), p.132504-132504-3

2005

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Photovoltaic response and dielectric properties of epitaxial anatase-TiO2 films grown on conductive La0.5Sr0.5CoO3 electrodes

Applied physics letters, 2001-10, Vol.79 (17), p.2797-2799

2001

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Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 films

Applied physics letters, 2002-07, Vol.81 (1), p.114-116

2002

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Effect of crystallinity on the transport properties of Nd0.67Sr0.33MnO3 thin films

Applied physics letters, 2004-02, Vol.84 (7), p.1147-1149

2004

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Reduction in misfit dislocation density by the selective growth of Si1-xGex/Si in small areas

Applied physics letters, 1990, Vol.56 (1), p.51-53

1990

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Microstructure and dielectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films grown on LaAlO{sub 3} substrates

Applied physics letters, 2000-08, Vol.77 (8)

2000

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Thermal stability of Si/Si1-xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing

Applied physics letters, 1989-11, Vol.55 (19), p.1978-1980

1989

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Electron-beam-induced current investigations of cw laser-annealed silicon

Applied physics letters, 1980-07, Vol.37 (2), p.154-156

1980

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Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si

Applied physics letters, 1981-10, Vol.39 (7), p.564-566

1981

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Electronic defect levels in self-implanted cw laser-annealed silicon

Applied physics letters, 1979-05, Vol.34 (10), p.704-706

1979

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The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon

Applied physics letters, 1981-01, Vol.39 (10), p.810-812

1981

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Effect of oxygen on minority-carrier lifetime and recombination currents in Si1− x Ge x heterostructure devices

Applied physics letters, 1991-03, Vol.58 (12), p.1317-1319

1991

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Reduction in misfit dislocation density by the selective growth of Si1− x Ge x /Si in small areas

Applied physics letters, 1990-01, Vol.56 (1), p.51-53

1990

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The effect of oxygen on the thermal stability of Si1− x Ge x strained layers

Applied physics letters, 1991-04, Vol.58 (14), p.1536-1538

1991

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Thermal stability of Si/Si1− x Ge x /Si heterojunction bipolar transistor structures grown by limited reaction processing

Applied physics letters, 1989-11, Vol.55 (19), p.1978-1980

1989

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Thermal stability of Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistor structures grown by limited reaction processing

Applied physics letters, 1989-01, Vol.55 (19), p.1978-1980

1989

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OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICON

Applied physics letters, 1969-01, Vol.14 (3), p.90-92

1969

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Electronic Defect Levels in Self-Implanted Continuous Wave Laser-Annealed Silicon

Applied physics letters, 1979-05, Vol.34 (10), p.704-706

1979

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Effect of annealing atmosphere p O2 on leakage current in 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 piezoelectric thin films

Effect of annealing atmosphere pO2 on leakage current in 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 piezoelectric thin films

Microstructure and dielectric properties of Ba1−xSrxTiO3 films grown on LaAlO3 substrates

Effect of the misalignment between the applied and internal magnetic fields on the critical currents of "tilted coated conductors"

Photovoltaic response and dielectric properties of epitaxial anatase-TiO2 films grown on conductive La0.5Sr0.5CoO3 electrodes

Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 films

Effect of crystallinity on the transport properties of Nd0.67Sr0.33MnO3 thin films

Reduction in misfit dislocation density by the selective growth of Si1-xGex/Si in small areas

Microstructure and dielectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films grown on LaAlO{sub 3} substrates

Thermal stability of Si/Si1-xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing

Electron-beam-induced current investigations of cw laser-annealed silicon

Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si

Electronic defect levels in self-implanted cw laser-annealed silicon

The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon

Effect of oxygen on minority-carrier lifetime and recombination currents in Si1− x Ge x heterostructure devices

Reduction in misfit dislocation density by the selective growth of Si1− x Ge x /Si in small areas

The effect of oxygen on the thermal stability of Si1− x Ge x strained layers

Thermal stability of Si/Si1− x Ge x /Si heterojunction bipolar transistor structures grown by limited reaction processing

Thermal stability of Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistor structures grown by limited reaction processing

OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICON

Electronic Defect Levels in Self-Implanted Continuous Wave Laser-Annealed Silicon

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