UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 374

Sortiert nach

Determination of the dielectric constant of GaN in the kHz frequency range

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085006

2011

Link zum Volltext

Verfügbarkeit prüfen

Identification of radiative transitions in highly porous silicon

Journal of physics. Condensed matter, 1993-02, Vol.5 (7), p.L91-L98

1993

Link zum Volltext

Verfügbarkeit prüfen

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Journal of crystal growth, 2000-02, Vol.209 (2), p.486-491

2000

Link zum Volltext

Verfügbarkeit prüfen

Inter-sub-band absorption in GaAs/AlGaAs single quantum wells

Semiconductor science and technology, 1988-07, Vol.3 (7), p.722-725

1988

Link zum Volltext

Verfügbarkeit prüfen

The origin of efficient luminescence in highly porous silicon

Journal of luminescence, 1994-04, Vol.60-61, p.297-301

1994

Link zum Volltext

Verfügbarkeit prüfen

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Applied physics letters, 2000-02, Vol.76 (8), p.943-945

2000

Link zum Volltext

Verfügbarkeit prüfen

Photoluminescence study of the density-of-states between Landau levels in the quantum hall effect system

Solid state communications, 1988-08, Vol.67 (6), p.637-641

1988

Link zum Volltext

Verfügbarkeit prüfen

The effects of free carriers on the photoluminescence and photoluminescence excitation spectra of InGaAs-InP quantum wells

Semiconductor science and technology, 1988-07, Vol.3 (7), p.691-700

1988

Link zum Volltext

Verfügbarkeit prüfen

Electron mobilities and photoelectron lifetimes in AlGaAs/GaAs and InGaAs/GaAs quantum-well infrared detectors

Journal of applied physics, 1993-06, Vol.73 (11), p.7966-7968

1993

Link zum Volltext

Verfügbarkeit prüfen

Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation-doped heterojunctions

Journal of applied physics, 1986-07, Vol.60 (2), p.657-664

1986

Link zum Volltext

Verfügbarkeit prüfen

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

Applied physics letters, 1986-11, Vol.49 (20), p.1360-1362

1986

Link zum Volltext

Verfügbarkeit prüfen

An experimental and theoretical study of intersubband transitions in InSb and InAs asymmetric doping superlattices

Semiconductor science and technology, 1995-08, Vol.10 (8), p.1103-1107

1995

Link zum Volltext

Verfügbarkeit prüfen

Localisation effects caused by the remote donors in modulation-doped quantum wells

Semiconductor science and technology, 1988-01, Vol.3 (1), p.12-17

1988

Link zum Volltext

Verfügbarkeit prüfen

Inter-sub-band absorption in InP/In0.53Ga0.47As multiple quantum wells

Semiconductor science and technology, 1988-06, Vol.3 (6), p.586-589

1988

Link zum Volltext

Verfügbarkeit prüfen

Modulation-doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition

Applied physics letters, 1987-07, Vol.51 (3), p.180-182

1987

Link zum Volltext

Verfügbarkeit prüfen

Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions

Journal of physics. C, Solid state physics, 1985-10, Vol.18 (29), p.5629-5636

1985

Link zum Volltext

Verfügbarkeit prüfen

GaAs asymmetrically doped n - i - p - i - superlattices for 10 μm infrared subband detector and modulator applications

Journal of applied physics, 1994-10, Vol.76 (7), p.4407-4412

1994

Link zum Volltext

Verfügbarkeit prüfen

Transport in InGaAs/InP heterostructures grown by MOCVD

Surface science, 1986-04, Vol.170 (1), p.470-479

1986

Link zum Volltext

Verfügbarkeit prüfen

ODMR of recombination centres in crystalline quartz

Journal of physics. C, Solid state physics, 1984-06, Vol.17 (16), p.2943-2951

1984

Link zum Volltext

Verfügbarkeit prüfen

Zeeman spectroscopy of vanadium-doped indium phosphide

Journal of physics. C, Solid state physics, 1984-12, Vol.17 (35), p.6455-6467

1984

Link zum Volltext

Verfügbarkeit prüfen

The Spectroscopy of Porous Silicon

MRS proceedings, 1995, Vol.358, Article 465

1995

Link zum Volltext

Verfügbarkeit prüfen

Zeeman spectroscopy of luminescence from vanadium-doped indium phosphide

Journal of physics. C, Solid state physics, 1983-07, Vol.16 (21), p.L767-L775

1983

Link zum Volltext

Verfügbarkeit prüfen

A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe

Journal of physics. C, Solid state physics, 1985-11, Vol.18 (33), p.6185-6198

1985

Link zum Volltext

Verfügbarkeit prüfen

Zeeman spectroscopy of crystal-field transitions of Co-doped InP

Journal of physics. C, Solid state physics, 1983-09, Vol.16 (27), p.5277-5291

1983

Link zum Volltext

Verfügbarkeit prüfen

Intersubband absorption and infrared modulation in GaAs/AlGaAs single quantum wells

Superlattices and microstructures, 1989, Vol.5 (4), p.587-589

1989

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 374

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieThe American Journal Of Psychiatry

PublikationsformNewsletter-Artikel

ThemaPhysics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(293)
Mit Volltextzugriff
(358)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(331)
Physical Sciences
(323)
Exact Sciences And Technology
(117)
Physics, Applied
(107)
Technology
(106)
Physics, Condensed Matter
(68)
Physics, Multidisciplinary
(65)
Materials Science
(63)
Engineering
(53)
Engineering, Electrical & Electronic
(47)
Materials Science, Multidisciplinary
(46)
Optics
(43)
Physics, Nuclear
(41)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(35)
Physics, Particles & Fields
(35)
Astronomy & Astrophysics
(33)
Applied Sciences
(22)
Atomic And Molecular Physics
(19)
Chemistry
(19)

14 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Determination of the dielectric constant of GaN in the kHz frequency range

Identification of radiative transitions in highly porous silicon

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Inter-sub-band absorption in GaAs/AlGaAs single quantum wells

The origin of efficient luminescence in highly porous silicon

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Photoluminescence study of the density-of-states between Landau levels in the quantum hall effect system

The effects of free carriers on the photoluminescence and photoluminescence excitation spectra of InGaAs-InP quantum wells

Electron mobilities and photoelectron lifetimes in AlGaAs/GaAs and InGaAs/GaAs quantum-well infrared detectors

Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation-doped heterojunctions

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

An experimental and theoretical study of intersubband transitions in InSb and InAs asymmetric doping superlattices

Localisation effects caused by the remote donors in modulation-doped quantum wells

Inter-sub-band absorption in InP/In0.53Ga0.47As multiple quantum wells

Modulation-doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition

Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions

GaAs asymmetrically doped n - i - p - i - superlattices for 10 μm infrared subband detector and modulator applications

Transport in InGaAs/InP heterostructures grown by MOCVD

ODMR of recombination centres in crystalline quartz

Zeeman spectroscopy of vanadium-doped indium phosphide

The Spectroscopy of Porous Silicon

Zeeman spectroscopy of luminescence from vanadium-doped indium phosphide

A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe

Zeeman spectroscopy of crystal-field transitions of Co-doped InP

Intersubband absorption and infrared modulation in GaAs/AlGaAs single quantum wells

Aktive Filter

Suchergebnisse filtern