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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

2000

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SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Applied surface science, 2004, Vol.224 (1), p.265-269

2004

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

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Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

Thin solid films, 1997-02, Vol.294 (1), p.160-165

Whall, T.E.

1997

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p-channel SiGe heterostructures for field effect applications

Applied surface science, 1996-08, Vol.102, p.221-229

Whall, T.E.

1996

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Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Journal of crystal growth, 1984-11, Vol.69 (1), p.101-107

1984

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Journal of crystal growth, 1995-12, Vol.157 (1), p.353-361

Whall, T.E.

1995

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Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.18 (1), p.145-146

2003

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Study of velocity field characteristics in pseudomorphic Si 0.8Ge 0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic engineering, 2000, Vol.51, p.541-546

2000

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Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003-05, Vol.18 (1-3), p.145-146

2003

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Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic engineering, 2000-05, Vol.51-52, p.541-546

2000

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Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000, Vol.6 (1), p.297-300

2000

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.444-448

2002

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Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.89 (1), p.444-448

2002

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Evidence of reduced self-heating in strained Si MOSFETs

SiGe(C) epitaxial technologies—issues and prospectives

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

SiGe : heterostructures for CMOS technology

Impact ionisation in strained SiGe pMOSFETs

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

p-channel SiGe heterostructures for field effect applications

Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Study of velocity field characteristics in pseudomorphic Si 0.8Ge 0.2 p-channel metal-oxide-semiconductor field effect transistor

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

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