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Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Modeling of electron transfer phenomenon in the dinuclear {Fe(μ − CN)Co} complexes

Journal of applied physics, 2021-03, Vol.129 (11)

2021

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Unraveling the abnormal dependence of phase stability on valence electron concentration in Ni–Mn-based metamagnetic shape memory alloys

Journal of applied physics, 2020-07, Vol.128 (4)

2020

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Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

Journal of applied physics, 2015-07, Vol.118 (4)

2015

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Valley aspect of lateral tunneling transport

Journal of applied physics, 2019-04, Vol.125 (14)

2019

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Conversion of p to n-type reduced graphene oxide by laser annealing at room temperature and pressure

Journal of applied physics, 2017-03, Vol.121 (12)

2017

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Substrate orientation dependent characteristics of half-metallic and metallic superlattices [La0.7Sr0.3MnO3/LaNiO3]10

Journal of applied physics, 2022-03, Vol.131 (12)

2022

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Magnetotransport and thermal properties of microwave synthesized nanostructured Bi2Te3

Journal of applied physics, 2021-05, Vol.129 (19)

2021

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Unifying the optical and electrical properties of amorphous carbon: application to hopping photoconductivity and memristance

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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A novel high-temperature carbon-based superconductor: B-doped Q-carbon

Journal of applied physics, 2017-07, Vol.122 (4)

2017

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Influence of the electron-phonon interaction on the temperature dependence of the phonon mode frequency in the II-VI compound solid solutions

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Electronic structure tuning of the anomalous thermoelastic behavior in Nb-X (X = Zr, V, Mo) solid solutions

Journal of applied physics, 2019-06, Vol.125 (21)

2019

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Electron paramagnetic resonance study of paramagnetic centers in carbon-fumed silica adsorbent

Journal of applied physics, 2014-04, Vol.115 (13)

2014

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Wafer scale integration of reduced graphene oxide by novel laser processing at room temperature in air

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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The Seebeck coefficient of superionic conductors

Journal of applied physics, 2015-01, Vol.117 (4), p.45101

Mahan, G. D.

2015

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Effects of interlayer screening and temperature on dielectric functions of graphene by first-principles

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Phonon-phonon interactions: First principles theory

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements

Journal of applied physics, 2014-12, Vol.116 (21), p.213911

2014

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Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Journal of applied physics, 2020-01, Vol.127 (4)

2020

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Evidence of charged interface states limited scattering in GaN heterostructures

Journal of applied physics, 2023-08, Vol.134 (8)

2023

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Photoexcited carrier trapping and recombination at Fe centers in GaN

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential

Journal of applied physics, 2023-12, Vol.134 (22)

2023

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Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells

Journal of applied physics, 2017-01, Vol.121 (1)

2017

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Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Thermoelectric transport contribution from topological surface states vs 2D-electron gas in 10 nm Bi2Se3

Modeling of electron transfer phenomenon in the dinuclear {Fe(μ − CN)Co} complexes

Unraveling the abnormal dependence of phase stability on valence electron concentration in Ni–Mn-based metamagnetic shape memory alloys

Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

Valley aspect of lateral tunneling transport

Conversion of p to n-type reduced graphene oxide by laser annealing at room temperature and pressure

Substrate orientation dependent characteristics of half-metallic and metallic superlattices [La0.7Sr0.3MnO3/LaNiO3]10

Magnetotransport and thermal properties of microwave synthesized nanostructured Bi2Te3

Unifying the optical and electrical properties of amorphous carbon: application to hopping photoconductivity and memristance

A novel high-temperature carbon-based superconductor: B-doped Q-carbon

Influence of the electron-phonon interaction on the temperature dependence of the phonon mode frequency in the II-VI compound solid solutions

Electronic structure tuning of the anomalous thermoelastic behavior in Nb-X (X = Zr, V, Mo) solid solutions

Electron paramagnetic resonance study of paramagnetic centers in carbon-fumed silica adsorbent

Wafer scale integration of reduced graphene oxide by novel laser processing at room temperature in air

The Seebeck coefficient of superionic conductors

Effects of interlayer screening and temperature on dielectric functions of graphene by first-principles

Phonon-phonon interactions: First principles theory

The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements

Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Evidence of charged interface states limited scattering in GaN heterostructures

Photoexcited carrier trapping and recombination at Fe centers in GaN

High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential

Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

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