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Elastic properties, Debye temperature, density of states and electron–phonon coupling of ZrB 12 under pressure

Solid state communications, 2012-02, Vol.152 (4), p.249-252

2012

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First principles research on electronic structure of Zn-doped Ga0.5Al0.5As (001) β2 (2×4) surface

Solid state communications, 2014-06, Vol.187, p.13-17

2014

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Transport properties of high-quality epitaxial graphene on 6H-SiC(0001): Graphene

Solid state communications, 2011, Vol.151 (16), p.1061-1064

2011

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Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition: Graphene

Solid state communications, 2011, Vol.151 (16), p.1100-1104

2011

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Probing collective modes of correlated states of few electrons in semiconductor quantum dots: Fundamental Phenomena and Applications of Quantum Dots

Solid state communications, 2009, Vol.149 (35-36), p.1436-1442

2009

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Tunneling transport through multi-electrons states in coupled quantum dots with Coulomb correlations

Solid state communications, 2014, Vol.199, p.33-38

2014

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Study of the surface segregation of carbon vacancies in TiCx

Solid state communications, 2012, Vol.152 (3), p.185-188

2012

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Electronic structure of the Ni2P(1010) surface: Angle-resolved photoemission study

Solid state communications, 2010, Vol.150 (25-26), p.1120-1123

2010

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Electronic properties and structural phase transition in A4 [M4O4] (A=Li, Na, K and Rb; M=Ag and Cu): A first principles study

Solid state communications, 2013-02, Vol.155, p.62-68

2013

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Electronic structure of Euz+-doped SrAl2O4 using modified Becke-Johnson exchange potential

Solid state communications, 2014, Vol.186, p.46-49

2014

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Landau levels in deformed bilayer graphene at low magnetic fields: Graphene

Solid state communications, 2011, Vol.151 (16), p.1088-1093

2011

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Quasiparticle band structures of II–VI semiconductors containing semicore states in the G0W0(LDA+U) approach

Solid state communications, 2012-04, Vol.152 (7), p.588-592

2012

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Electronic structure and static dielectric response of Ba(Mn1/3Nb2/3)O3 from first principles

Solid state communications, 2013-01, Vol.154, p.1-5

2013

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A LDA + U study of the photoemission spectra of the double hexagonal close packed phases of Am and Cm

Solid state communications, 2010-05, Vol.150 (19), p.938-942

2010

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Pinning mode resonances of new phases of 2D electron systems in high magnetic fields: Emergent phenomena in quantum hall systems

Solid state communications, 2006, Vol.140 (2), p.100-106

2006

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Cl2 adsorption on MgO(001) surface supported sodium monolayers: a density functional theory study

Solid state communications, 2003-04, Vol.126 (3), p.107-112

2003

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Ground state energy of the electron–hole liquid in type-II (GaAs) m/(AlAs) m quantum wells

Solid state communications, 2003-02, Vol.125 (6), p.337-340

2003

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First principles study on electronic properties and occupancy sites of molybdenum doped into LiFeP04

Solid state communications, 2012, Vol.152 (16), p.1577-1580

2012

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Effects of partial hydrogenation on electronic transport properties in C60 molecular devices

Solid state communications, 2012-12, Vol.152 (23), p.2123-2127

2012

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Structural phase transitions in MgH2 under high pressure

Solid state communications, 2008-12, Vol.148 (9-10), p.403-405

2008

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Lattice dynamics and electronic properties of the scintillator host material: Barium hafnate

Solid state communications, 2008-07, Vol.147 (1), p.1-3

Vali, R.

2008

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Electronic structure and thermoelectric properties of Bi2(Te1−xSex)3 compound

Solid state communications, , Vol.155, p.34-39

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Development of the electronic structure in a K-doped C60 monolayer on a Ag(1 1 1) surface

Solid state communications, 1997-07, Vol.103 (1), p.31-35

1997

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Revisiting the Phillips ionicity of conductors and the quantitative determination of the hardness of carbides and nitrides of transition metals using the LDA + U technique

Solid state communications, 2010-10, Vol.150 (37), p.1818-1821

2010

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Electron dynamics at a Ag/C60 metal-semiconductor interface

Solid state communications, 2000-02, Vol.113 (12), p.689-693

2000

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Elastic properties, Debye temperature, density of states and electron–phonon coupling of ZrB 12 under pressure

First principles research on electronic structure of Zn-doped Ga0.5Al0.5As (001) β2 (2×4) surface

Transport properties of high-quality epitaxial graphene on 6H-SiC(0001): Graphene

Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition: Graphene

Probing collective modes of correlated states of few electrons in semiconductor quantum dots: Fundamental Phenomena and Applications of Quantum Dots

Tunneling transport through multi-electrons states in coupled quantum dots with Coulomb correlations

Study of the surface segregation of carbon vacancies in TiCx

Electronic structure of the Ni2P(1010) surface: Angle-resolved photoemission study

Electronic properties and structural phase transition in A4 [M4O4] (A=Li, Na, K and Rb; M=Ag and Cu): A first principles study

Electronic structure of Euz+-doped SrAl2O4 using modified Becke-Johnson exchange potential

Landau levels in deformed bilayer graphene at low magnetic fields: Graphene

Quasiparticle band structures of II–VI semiconductors containing semicore states in the G0W0(LDA+U) approach

Electronic structure and static dielectric response of Ba(Mn1/3Nb2/3)O3 from first principles

A LDA + U study of the photoemission spectra of the double hexagonal close packed phases of Am and Cm

Pinning mode resonances of new phases of 2D electron systems in high magnetic fields: Emergent phenomena in quantum hall systems

Cl2 adsorption on MgO(001) surface supported sodium monolayers: a density functional theory study

Ground state energy of the electron–hole liquid in type-II (GaAs) m/(AlAs) m quantum wells

First principles study on electronic properties and occupancy sites of molybdenum doped into LiFeP04

Effects of partial hydrogenation on electronic transport properties in C60 molecular devices

Structural phase transitions in MgH2 under high pressure

Lattice dynamics and electronic properties of the scintillator host material: Barium hafnate

Electronic structure and thermoelectric properties of Bi2(Te1−xSex)3 compound

Development of the electronic structure in a K-doped C60 monolayer on a Ag(1 1 1) surface

Revisiting the Phillips ionicity of conductors and the quantitative determination of the hardness of carbides and nitrides of transition metals using the LDA + U technique

Electron dynamics at a Ag/C60 metal-semiconductor interface

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