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Photoluminescence of Eu2+ in SrGa2S4

Journal of luminescence, 2005-02, Vol.111 (3), p.147-158

2005

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Radiative properties of Eu2+ in BaGa2S4

The Journal of physics and chemistry of solids, 2005-06, Vol.66 (6), p.1049-1056

2005

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EXPERIMENTAL STUDY OF 3D SELF-ASSEMBLED PHOTONIC CRYSTALS AND COLLOIDAL CORE-SHELL SEMICONDUCTOR QUANTUM DOTS

ASEAN journal on science & technology for development, 2017-11, Vol.24 (1&2), p.161-170

2017

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Stimulated emission from ZnO–SiO2–Si thin film nanoresonators obtained by magnetron sputtering method

Thin solid films, 2004-07, Vol.459 (1-2), p.262-266

2004

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Effects of yttrium codoping on fluorescence lifetimes of Er3+ ions in SiO2–Al2O3 sol–gel glasses

Journal of non-crystalline solids, 2006-07, Vol.352 (23-25), p.2385-2389

2006

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Luminescence of BaSiO3 crystals doped with Er3+ and Yb3

Inorganic materials, 2009-09, Vol.45 (9), p.1032-1035

2009

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Optical properties of normal and 'giant' multishell CdSe quantum dots for potential application in material science

International journal of nanotechnology., 2011, Vol.8 (3/4/5), p.347

2011

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Manipulating emission of CdTeSe quantum dots embedded in synthetic opals

Physica status solidi. C, 2010-06, Vol.7 (6), p.1678-1680

2010

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Luminescent properties of synthetic opal

Inorganic materials, 2008-02, Vol.44 (2), p.159-164

2008

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Structural and luminescent properties of green emitting SrGa2S4:Eu thin films prepared by RF-sputtering

Journal of crystal growth, 2003-09, Vol.256 (3-4), p.305-316

2003

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Fine-tuning the optical properties of aluminium and lithium quinolates through oligothiophene substituents in 2-position

Synthetic metals, 2004-12, Vol.147 (1-3), p.175-182

2004

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Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (6), p.661-665

Georgobiani, A. N.

2005

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Optical properties of an opal with a planar defect fabricated by inverse Schaefer and Langmuir–Blodgett techniques

Optical and quantum electronics, 2015-01, Vol.47 (1), p.55-65

2015

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The electro-optical behavior of SrS:Ce electroluminescent devices under photonic excitation

Journal of applied physics, 2000-01, Vol.87 (1), p.198-202

2000

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Variations in the intensity of lasing in vertical ZnO nanorods with polarization of optical excitation

Semiconductors (Woodbury, N.Y.), 2007-06, Vol.41 (6), p.713-717

2007

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Luminescence of CVD ZnO nanocrystals of different shapes

Inorganic materials, 2006-05, Vol.42 (5), p.508-514

2006

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IIA-III2-S4 ternary compounds : new host matrices for full color thin film electroluminescence displays

Applied physics letters, 1993-10, Vol.63 (14), p.1954-1956

1993

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Applied voltage effect on the electron delocalization of excited Ce3+ in SrS:Ce electroluminescent devices

Journal of applied physics, 2000-07, Vol.88 (2), p.1061-1066

2000

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Spontaneous and stimulated emission from magnetron-deposited ZnO-SiO2-Si thin-film nanocavities

Semiconductors (Woodbury, N.Y.), 2002-06, Vol.36 (6), p.701-705

2002

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Elementary blue-emission bands in the luminescence spectrum of undoped gallium nitride films

Semiconductors (Woodbury, N.Y.), 2004-09, Vol.38 (9), p.1001-1004

2004

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Quantitative analyses and crystallographic studies of ZnS: Mn thin films prepared by r.f. magnetron reactive sputtering

Thin solid films, 1994-01, Vol.248 (2), p.193-198

1994

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Excitation efficiency in thin-film electroluminescent devices: Probe layer measurements

Journal of applied physics, 1993-02, Vol.73 (3), p.1435-1442

1993

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Excitation efficiency and field non-uniformity in ZnS-based thin-film electroluminescent devices grown by atomic layer epitaxy

Semiconductor science and technology, 1997-11, Vol.12 (11), p.1479-1486

1997

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SrGa2S4: RE phosphors for full colour electroluminescent displays

Journal of alloys and compounds, 1998-07, Vol.275-277, p.709-715

1998

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Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3), p.358-362

2008

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Photoluminescence of Eu2+ in SrGa2S4

Radiative properties of Eu2+ in BaGa2S4

EXPERIMENTAL STUDY OF 3D SELF-ASSEMBLED PHOTONIC CRYSTALS AND COLLOIDAL CORE-SHELL SEMICONDUCTOR QUANTUM DOTS

Stimulated emission from ZnO–SiO2–Si thin film nanoresonators obtained by magnetron sputtering method

Effects of yttrium codoping on fluorescence lifetimes of Er3+ ions in SiO2–Al2O3 sol–gel glasses

Luminescence of BaSiO3 crystals doped with Er3+ and Yb3

Optical properties of normal and 'giant' multishell CdSe quantum dots for potential application in material science

Manipulating emission of CdTeSe quantum dots embedded in synthetic opals

Luminescent properties of synthetic opal

Structural and luminescent properties of green emitting SrGa2S4:Eu thin films prepared by RF-sputtering

Fine-tuning the optical properties of aluminium and lithium quinolates through oligothiophene substituents in 2-position

Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K

Optical properties of an opal with a planar defect fabricated by inverse Schaefer and Langmuir–Blodgett techniques

The electro-optical behavior of SrS:Ce electroluminescent devices under photonic excitation

Variations in the intensity of lasing in vertical ZnO nanorods with polarization of optical excitation

Luminescence of CVD ZnO nanocrystals of different shapes

IIA-III2-S4 ternary compounds : new host matrices for full color thin film electroluminescence displays

Applied voltage effect on the electron delocalization of excited Ce3+ in SrS:Ce electroluminescent devices

Spontaneous and stimulated emission from magnetron-deposited ZnO-SiO2-Si thin-film nanocavities

Elementary blue-emission bands in the luminescence spectrum of undoped gallium nitride films

Quantitative analyses and crystallographic studies of ZnS: Mn thin films prepared by r.f. magnetron reactive sputtering

Excitation efficiency in thin-film electroluminescent devices: Probe layer measurements

Excitation efficiency and field non-uniformity in ZnS-based thin-film electroluminescent devices grown by atomic layer epitaxy

SrGa2S4: RE phosphors for full colour electroluminescent displays

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor

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