UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Journal of applied physics, 2015-12, Vol.118 (22)

2015

Volltextzugriff (PDF)

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

Applied physics letters, 2014-08, Vol.105 (5)

2014

Volltextzugriff (PDF)

Morphological stability during solidification of silicon incorporating metallic impurities

Journal of applied physics, 2014-04, Vol.115 (16)

2014

Volltextzugriff (PDF)

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

AIP advances, 2020-07, Vol.10 (7), p.075028-075028-6

2020

Volltextzugriff (PDF)

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

Applied physics letters, 2011-08, Vol.99 (7), p.073503-073503-3

2011

Volltextzugriff (PDF)

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Journal of applied physics, 2016-05, Vol.119 (18)

2016

Volltextzugriff (PDF)

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Journal of applied physics, 2013-12, Vol.114 (24)

2013

Volltextzugriff (PDF)

Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Applied physics letters, 2016-08, Vol.109 (8)

2016

Volltextzugriff (PDF)

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

AIP advances, 2016-05, Vol.6 (5), p.055307-055307-7

2016

Volltextzugriff (PDF)

On the limits to Ti incorporation into Si using pulsed laser melting

Applied physics letters, 2014-03, Vol.104 (11)

2014

Volltextzugriff (PDF)

Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-01, Vol.18 (1), p.115-120

2000

Volltextzugriff (PDF)

Photocarrier lifetime and transport in silicon supersaturated with sulfur

Applied physics letters, 2012-09, Vol.101 (11), p.111105

2012

Volltextzugriff (PDF)

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

Applied physics letters, 2013-01, Vol.102 (3)

2013

Volltextzugriff (PDF)

Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms

Applied physics letters, 1997-05, Vol.70 (21), p.2810-2812

Aziz, Michael J.

1997

Volltextzugriff (PDF)

Nanopore fabrication in amorphous Si: Viscous flow model and comparison to experiment

Journal of applied physics, 2010-07, Vol.108 (1), p.014310-014310-8

2010

Volltextzugriff (PDF)

Ion-induced nanopatterning of silicon: Toward a predictive model

Applied physics reviews, 2019-03, Vol.6 (1)

2019

Volltextzugriff (PDF)

Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

Applied physics letters, 2005-10, Vol.87 (18), p.181916-181916-3

2005

Volltextzugriff (PDF)

Thermal activation and saturation of ion beam sculpting

Journal of applied physics, 2011-04, Vol.109 (7), p.074312-074312-4

2011

Volltextzugriff (PDF)

Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting

Journal of applied physics, 2008-12, Vol.104 (11)

2008

Volltextzugriff (PDF)

Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

Journal of applied physics, 2006-07, Vol.100 (2)

2006

Volltextzugriff (PDF)

Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

Applied physics letters, 2011-03, Vol.98 (12), p.121913-121913-3

2011

Volltextzugriff (PDF)

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Journal of applied physics, 2013-06, Vol.113 (21)

2013

Volltextzugriff (PDF)

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Journal of applied physics, 2013-09, Vol.114 (12)

2013

Volltextzugriff (PDF)

Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

Applied physics letters, 2006-06, Vol.88 (24)

2006

Volltextzugriff (PDF)

Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism

Journal of applied physics, 1994-08, Vol.76 (3), p.1518-1529

1994

Volltextzugriff (PDF)

1 – 25 von 70

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SeriePhysical Review. B, Condensed Matter And Materials Physics

KollektionAIP Journals Complete

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(69)
Mit Volltextzugriff
(68)

Publikationsform

Artikel
(70)

Sprache

Englisch
(62)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

American Institute of Physics (AIP) Journals
(70)
Publisher or Other Site
(37)
IngentaConnect Journals
(2)
EZB Free E-Journals
(2)
IngentaConnect Journals
(2)

Menü

Weitere Dienste

Einstellungen

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

Morphological stability during solidification of silicon incorporating metallic impurities

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

On the limits to Ti incorporation into Si using pulsed laser melting

Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)

Photocarrier lifetime and transport in silicon supersaturated with sulfur

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms

Nanopore fabrication in amorphous Si: Viscous flow model and comparison to experiment

Ion-induced nanopatterning of silicon: Toward a predictive model

Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

Thermal activation and saturation of ion beam sculpting

Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting

Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism

Aktive Filter

Suchergebnisse filtern