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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

Journal of crystal growth, 2021-09, Vol.570, p.126245, Article 126245

2021

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Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Journal of crystal growth, 2021-11, Vol.574, p.126324, Article 126324

2021

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H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq

Journal of crystal growth, 2022-06, Vol.588, p.126674, Article 126674

2022

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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Journal of crystal growth, 2018-10, Vol.500, p.1-4

2018

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Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family

Journal of crystal growth, 2018-10, Vol.500, p.23-27

2018

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Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of crystal growth, 2022-07, Vol.589, p.126673, Article 126673

2022

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Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE

Journal of crystal growth, 2021-04, Vol.560-561, p.126046, Article 126046

2021

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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Journal of crystal growth, 2021-12, Vol.575, p.126325, Article 126325

2021

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Growth design for high quality AlxGa(1−x)N layer with high AlN-fraction on Si (111) substrate by MOCVD

Journal of crystal growth, 2022-01, Vol.578, p.126418, Article 126418

2022

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Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Journal of crystal growth, 2020-06, Vol.540, p.125652, Article 125652

2020

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Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Journal of crystal growth, 2022-06, Vol.588, p.126669, Article 126669

2022

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Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE

Journal of crystal growth, 2019-02, Vol.507, p.307-309

2019

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Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach

Journal of crystal growth, 2020-10, Vol.548, p.125824, Article 125824

2020

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Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

Journal of crystal growth, 2019-04, Vol.512, p.213-218

2019

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GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates

Journal of crystal growth, 2017-04, Vol.464, p.168-174

2017

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Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

Journal of crystal growth, 2020-09, Vol.545, p.125722, Article 125722

2020

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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Journal of crystal growth, 2020-02, Vol.531, p.125343, Article 125343

2020

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Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

Journal of crystal growth, 2020-03, Vol.534, p.125475, Article 125475

2020

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High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1 1 0) Si substrates grown by ammonia molecular beam epitaxy

Journal of crystal growth, 2019-03, Vol.509, p.141-145

2019

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Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

Journal of crystal growth, 2015, Vol.428, p.54-58

2015

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Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Journal of crystal growth, 2019-04, Vol.512, p.100-104

2019

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Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth

Journal of crystal growth, 2019-07, Vol.517, p.64-67

2019

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Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Journal of crystal growth, 2015-03, Vol.414, p.232-236

2015

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Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization

Journal of crystal growth, 2019-02, Vol.507 (C), p.118-123

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE

Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Growth design for high quality AlxGa(1−x)N layer with high AlN-fraction on Si (111) substrate by MOCVD

Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE

Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach

Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates

Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1 1 0) Si substrates grown by ammonia molecular beam epitaxy

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization

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