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Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes

Optical materials express, 2021-03, Vol.11 (3), p.729

2021

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Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer

Optical materials express, 2021-06, Vol.11 (6), p.1780

2021

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Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis

Optical materials express, 2021-06, Vol.11 (6), p.1643

2021

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Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator

Optical materials express, 2023-11, Vol.13 (11), p.3342

2023

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Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells

Optical materials express, 2021-09, Vol.11 (9), p.3284

2021

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Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence

Optical materials express, 2015-11, Vol.5 (11), p.2608-2615

2015

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Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes

Optical materials express, 2019-01, Vol.9 (1), p.203

2019

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Strain dependent anisotropy in photoluminescence of heteroepitaxial nonpolar a-plane ZnO layers

Optical materials express, 2017-11, Vol.7 (11), p.3944

2017

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Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

Optical materials express, 2012-10, Vol.2 (10), p.1397-1406

2012

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GaN/AlN bilayers for integrated photonics

Optical materials express, 2024-03, Vol.14 (3), p.792

2024

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Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm

Optical materials express, 2021-04, Vol.11 (4), p.1282

2021

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InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Optical materials express, 2018-07, Vol.8 (7), p.1818

2018

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Optical dispersion and phase matching in gallium nitride and aluminum nitride

Optical materials express, 2018-04, Vol.8 (4), p.1091

2018

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Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

Optical materials express, 2021-04, Vol.11 (4), p.955

2021

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Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

Optical materials express, 2017-06, Vol.7 (6), p.1995

2017

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Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes

Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer

Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis

Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator

Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells

Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence

Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes

Strain dependent anisotropy in photoluminescence of heteroepitaxial nonpolar a-plane ZnO layers

Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

GaN/AlN bilayers for integrated photonics

Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Optical dispersion and phase matching in gallium nitride and aluminum nitride

Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

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