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Limitations in the accuracy of photoconductance-based lifetime measurements

Solar energy materials and solar cells, 2012-03, Vol.98, p.245-252

2012

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Cross-border planning for real estate: Austria

Trusts & trustees, 2018-02, Vol.24 (1), p.40-45

Schmidt, Niklas J R M

2018

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Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samples

Solar energy materials and solar cells, 2010-06, Vol.94 (6), p.1076-1080

2010

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Fast, high resolution, inline contactless electrical semiconductor characterization for photovoltaic applications by microwave detected photoconductivity

Materials science & engineering. B, Solid-state materials for advanced technology, 2013-05, Vol.178 (9), p.676-681

2013

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Explanation of positive and negative PICTS peaks in SI-GaAs

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.328-332

2008

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Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.79-82

2008

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Simulations of photoconductivity and lifetime for steady state and nonsteady state measurements

Journal of applied physics, 2010-03, Vol.107 (6), p.064901-064901-6

2010

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Contact-free investigation of the EL2-defect in the surface of GaAs wafers

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.363-366

2004

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Activation energies of the EL6 trap and of the 0.15 eV donor and their correlation in GaAs

Semiconductor science and technology, 2000-11, Vol.15 (11), p.1039-1044

2000

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Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTS

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.223-226

2004

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Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Materials science forum, 2009, Vol.600-603, p.405-408

2009

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Contact-less electrical defect characterisation of silicon by MD-PICTS

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.241-245

2006

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Topography of Defect Parameters on Si and GaAs Wafers

Advanced engineering materials, 2004-07, Vol.6 (7), p.598-602

2004

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High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.001776-001779

2010

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GaAs wafer mapping by microwave-detected photoconductivity

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.206-209

2001

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Point-contact measurements for high-resolution profiling of high-resistivity III - V semiconductors

Semiconductor science and technology, 1996-06, Vol.11 (6), p.851-857

1996

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Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for PV

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000852-000857

2010

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Defect specific topography of GaAs wafers by microwave-detected photo induced current transient spectroscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.371-375

2002

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Contact-free defect investigation of wafer-annealed Fe-doped SI-InP

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.355-358

2006

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An electron spin resonance study of vanadium-doped alpha -TeO2 single crystals

Journal of physics. Condensed matter, 1995-04, Vol.7 (15), p.3013-3022

1995

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Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.29-32

2002

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Investigation of Cu-related deep levels in semi-insulating GaAs by PICTS

Physica. B, Condensed matter, 2001-12, Vol.308, p.800-803

2001

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Acute Changes in Plasma Phosphate After Phosphorus-Standardized Meals in Peritoneal Dialysis: A Randomized Cross-Over Trial: PUB026

Journal of the American Society of Nephrology, 2020-10, Vol.31 (10S), p.798-799

2020

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Photoelastic characterization of residual strain in GaAs wafers annealed in holders of different geometry

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.7-10

1999

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Defect topography on GaAs wafers by microwave-detected photo-induced current transient spectroscopy

Physica status solidi. C, 2003-02 (3), p.885-888

2003

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Limitations in the accuracy of photoconductance-based lifetime measurements

Cross-border planning for real estate: Austria

Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samples

Fast, high resolution, inline contactless electrical semiconductor characterization for photovoltaic applications by microwave detected photoconductivity

Explanation of positive and negative PICTS peaks in SI-GaAs

Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations

Simulations of photoconductivity and lifetime for steady state and nonsteady state measurements

Contact-free investigation of the EL2-defect in the surface of GaAs wafers

Activation energies of the EL6 trap and of the 0.15 eV donor and their correlation in GaAs

Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTS

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Contact-less electrical defect characterisation of silicon by MD-PICTS

Topography of Defect Parameters on Si and GaAs Wafers

High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements

GaAs wafer mapping by microwave-detected photoconductivity

Point-contact measurements for high-resolution profiling of high-resistivity III - V semiconductors

Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for PV

Defect specific topography of GaAs wafers by microwave-detected photo induced current transient spectroscopy

Contact-free defect investigation of wafer-annealed Fe-doped SI-InP

An electron spin resonance study of vanadium-doped alpha -TeO2 single crystals

Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs

Investigation of Cu-related deep levels in semi-insulating GaAs by PICTS

Acute Changes in Plasma Phosphate After Phosphorus-Standardized Meals in Peritoneal Dialysis: A Randomized Cross-Over Trial: PUB026

Photoelastic characterization of residual strain in GaAs wafers annealed in holders of different geometry

Defect topography on GaAs wafers by microwave-detected photo-induced current transient spectroscopy

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