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pMOSFET with 200% mobility enhancement induced by multiple stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

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Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1647-1656

2006

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Layout impact on the performance of a locally strained PMOSFET

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.22-23

2005

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Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing

Ion Implantation Technology, 2006, Vol.866, p.129-132

2006

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Technological aspects of epitaxial CoSi2 layers for CMOS

Applied surface science, 1993-11, Vol.73, p.19-24

1993

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Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

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A new method for measuring the saturation velocity of submicron CMOS transistors

Solid-state electronics, 1995-04, Vol.38 (4), p.791-793

1995

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Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O

Journal of the Electrochemical Society, 2011, Vol.158 (1), p.H69

2011

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Leakage Current Control in Recessed SiGe Source/Drain Junctions

Journal of the Electrochemical Society, 2007, Vol.154 (9), p.H814

2007

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Impact of silicidation on the excess noise behaviour of mos transistors

Solid-state electronics, 1995-11, Vol.38 (11), p.1893-1897

1995

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Dislocation formation in silicon implanted at different temperatures

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-11, Vol.15 (2), p.173-186

1992

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Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Applied physics letters, 1991-03, Vol.58 (9), p.922-924

1991

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Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Thin solid films, 1994-10, Vol.251 (1), p.45-50

1994

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Two-step anneals to avoid bridging during Co silicidation

Applied surface science, 1993-01, Vol.73, p.162-166

1993

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Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1), p.110-113

1994

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Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Journal of applied physics, 1992-04, Vol.71 (8), p.3780-3784

1992

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Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.281-285