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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

Journal of electronic materials, 2023-02, Vol.52 (2), p.1391-1399

2023

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Amended Electric Field Distribution: A Reliable Technique for Electrical Performance Improvement in Nano scale SOI MOSFETs

Journal of electronic materials, 2017-04, Vol.46 (4), p.2269-2281

2017

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Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

Journal of electronic materials, 1998-08, Vol.27 (8), p.936-940

1998

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Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography

Journal of electronic materials, 1990-07, Vol.19 (7), p.721-725

1990

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Effects of combined x-ray Irradiation and hot-electron injection on NMOS transistors

Journal of electronic materials, 1992-07, Vol.21 (7), p.737-743

1992

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Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

Journal of electronic materials, 1992-07, Vol.21 (7), p.769-773

1992

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Enhanced Thermoelectric Performance of SnxBi0.5-xSb1.5Te3 Through the Synergistic Effects of Carrier and Phonon Engineering

Journal of electronic materials, 2020-07, Vol.49 (7), p.4282-4290

2020

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Enhancing the Thermoelectric Power Factor of Mg2Si/MgO Composites by Ag and Bi Codoping

Journal of electronic materials, 2023-07, Vol.52 (7), p.4768-4774

2023

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Simulation of the Influence of Absorber Thickness and Doping Concentration on Non-equilibrium Photovoltaic Long-Wavelength HgCdTe Infrared Detectors

Journal of electronic materials, 2023-07, Vol.52 (7), p.4801-4808

2023

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Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Journal of electronic materials, 2019-10, Vol.48 (10), p.6030-6039

2019

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Thermal Stability, Mechanical Properties and Thermoelectric Performance of Cu11TrSb4S13 (Tr = Mn, Fe, Co, Ni, Cu, and Zn)

Journal of electronic materials, 2020-05, Vol.49 (5), p.2710-2718

2020

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Improved Thermoelectric Performance for β-Zn4Sb3 by Na/Zn Co-doping

Journal of electronic materials, 2022-02, Vol.51 (2), p.522-531

2022

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Synthesis and Thermoelectric Properties of Partially Double-Filled (Ce1-z Pr z ) y Fe4-x Co x Sb12 Skutterudites

Journal of electronic materials, 2018-06, Vol.47 (6), p.3152-3158

2018

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Charge Transport and Thermoelectric Properties of (Nd1−z Yb z ) y Fe4−x Co x Sb12 Skutterudites

Journal of electronic materials, 2018-06, Vol.47 (6), p.3143-3151

2018

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Fully Sputtered n–AlInGaN/p–Mg-InxGa1−xN (x ≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range

Journal of electronic materials, 2022-03, Vol.51 (3), p.1288-1296

2022

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Influence of Sodium Chloride Doping on Thermoelectric Properties of p-type SnSe

Journal of electronic materials, 2017-11, Vol.46 (11), p.6662-6668

2017

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Achieving High Thermoelectric Performance of SnTe Composites with 2D WSe2

Journal of electronic materials, 2022-02, Vol.51 (2), p.486-494

2022

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Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition

Journal of electronic materials, 2019-10, Vol.48 (10), p.6093-6098

2019

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Effects of Zn/Bi Double Doping on the Charge Transport and Thermoelectric Properties of Tetrahedrites Cu12−xZnxSb4−yBiyS13

Journal of electronic materials, 2020-05, Vol.49 (5), p.2768-2774

2020

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Synthesis and Thermoelectric Properties of Cu12−xNixSb4S13 Tetrahedrites

Journal of electronic materials, 2020-05, Vol.49 (5), p.2775-2780

2020

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Structural and Thermoelectric Properties of Nanostructured Nominally Stoichiometric Pb^sub 1-x^Bi^sub x^Te Prepared by Mechanical Alloying

Journal of electronic materials, 2017-10, Vol.46 (10), p.5781

2017

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Structural and Thermoelectric Properties of Bi85Sb15 Prepared by Non-equal Channel Angular Extrusion

Journal of electronic materials, 2018-01, Vol.47 (1), p.242-250

2018

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Extruded Bismuth-Telluride-Based n-Type Alloys for Waste Heat Thermoelectric Recovery Applications

Journal of electronic materials, 2009-07, Vol.38 (7), p.1061-1067

2009

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

Amended Electric Field Distribution: A Reliable Technique for Electrical Performance Improvement in Nano scale SOI MOSFETs

Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography

Effects of combined x-ray Irradiation and hot-electron injection on NMOS transistors

Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

Enhanced Thermoelectric Performance of SnxBi0.5-xSb1.5Te3 Through the Synergistic Effects of Carrier and Phonon Engineering

Enhancing the Thermoelectric Power Factor of Mg2Si/MgO Composites by Ag and Bi Codoping

Simulation of the Influence of Absorber Thickness and Doping Concentration on Non-equilibrium Photovoltaic Long-Wavelength HgCdTe Infrared Detectors

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Thermal Stability, Mechanical Properties and Thermoelectric Performance of Cu11TrSb4S13 (Tr = Mn, Fe, Co, Ni, Cu, and Zn)

Improved Thermoelectric Performance for β-Zn4Sb3 by Na/Zn Co-doping

Synthesis and Thermoelectric Properties of Partially Double-Filled (Ce1-z Pr z ) y Fe4-x Co x Sb12 Skutterudites

Charge Transport and Thermoelectric Properties of (Nd1−z Yb z ) y Fe4−x Co x Sb12 Skutterudites

Fully Sputtered n–AlInGaN/p–Mg-InxGa1−xN (x ≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range

Influence of Sodium Chloride Doping on Thermoelectric Properties of p-type SnSe

Achieving High Thermoelectric Performance of SnTe Composites with 2D WSe2

Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition

Effects of Zn/Bi Double Doping on the Charge Transport and Thermoelectric Properties of Tetrahedrites Cu12−xZnxSb4−yBiyS13

Synthesis and Thermoelectric Properties of Cu12−xNixSb4S13 Tetrahedrites

Structural and Thermoelectric Properties of Nanostructured Nominally Stoichiometric Pb^sub 1-x^Bi^sub x^Te Prepared by Mechanical Alloying

Structural and Thermoelectric Properties of Bi85Sb15 Prepared by Non-equal Channel Angular Extrusion

Extruded Bismuth-Telluride-Based n-Type Alloys for Waste Heat Thermoelectric Recovery Applications

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