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A study on reducing eddy current loss of sleeve and improving torque density using ferrofluid of a surface permanent magnet synchronous motor

IET electric power applications, 2022-04, Vol.16 (4), p.463-471

2022

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Filter Combination Learning for Convolutional Neural Network

2020 International Conference on Information and Communication Technology Convergence (ICTC), 2020, p.1171-1176

2020

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A Study on Performance Improvement by Reducing Axial Force of Double-Layer Spoke-type PMSM with Core Skew Structure

2022 IEEE 20th Biennial Conference on Electromagnetic Field Computation (CEFC), 2022, p.1-2

2022

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The Study on Improving Reluctance Torque and Preventing Irreversible Demagnetization by Modified the Shape of Conventional Ferrite Flux-Concentrated Motor

2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020, p.1386-1391

2020

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Mechanical properties of in-situ doped polycrystalline 3C-SiC thin films

2008 Third International Forum on Strategic Technologies, 2008, p.198-201

2008

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A Study on a Ferrite Spoke-type Permanent Magnet Synchronous Motor with Improved Post-assembly Magnetization Performance

2022 IEEE 20th Biennial Conference on Electromagnetic Field Computation (CEFC), 2022, p.1-2

2022

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Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1014-1020

2020

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Origin of Ambipolar Behavior in p-Type Tin Monoxide Semiconductors: Impact of Oxygen Vacancy Defects

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4467-4472

2021

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A New Driving Method of the Magnetron Power Supply for a Sulfur Plasma Lamp

IEEE transactions on industrial electronics (1982), 2016-09, Vol.63 (9), p.5416-5424

2016

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Patent Clustering and Outlier Ranking Methodologies for Attributed Patent Citation Networks for Technology Opportunity Discovery

IEEE transactions on engineering management, 2016-11, Vol.63 (4), p.426-437

2016

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Functionality-Based Processing-in-Memory Accelerator for Deep Convolutional Neural Networks

IEEE access, 2021, Vol.9, p.145098-145108

2021

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All-Digital Duty-Cycle Corrector With a Wide Duty Correction Range for DRAM Applications

IEEE transactions on very large scale integration (VLSI) systems, 2016-01, Vol.24 (1), p.363-367

2016

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A 0.31-1 GHz Fast-Corrected Duty-Cycle Corrector With Successive Approximation Register for DDR DRAM Applications

IEEE transactions on very large scale integration (VLSI) systems, 2012-08, Vol.20 (8), p.1524-1528

2012

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Cross-correlation interference-free tiered polyphase codes for GNSS signal design

Electronics letters, 2014-01, Vol.50 (3), p.218-219

2014

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Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2409-2416

2022

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Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2317

2023

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Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1

2023

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A 1-mW Solar-Energy-Harvesting Circuit Using an Adaptive MPPT With a SAR and a Counter

IEEE transactions on circuits and systems. II, Express briefs, 2013-06, Vol.60 (6), p.331-335

2013

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Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO 2 /IGZO Thin-Film Transistors

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2317-2323

2023

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Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO } /IGZO Thin-Film Transistors

IEEE transactions on electron devices, 2023-03, p.1-7

2023

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7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability

IEEE electron device letters, 2023-11, Vol.44 (11), p.1857-1860

2023

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Achieving High Field-Effect Mobility Exceeding 90 cm 2 /Vs in a -IGZTO Transistors With Excellent Reliability

IEEE electron device letters, 2023-11, Vol.44 (11), p.1857-1860

2023

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Loss Analysis of 3-level LLC Converter with Duty Control

2022 5th International Conference on Power Engineering and Renewable Energy (ICPERE), 2022, Vol.1, p.1-5

2022

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A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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A study on reducing eddy current loss of sleeve and improving torque density using ferrofluid of a surface permanent magnet synchronous motor

Filter Combination Learning for Convolutional Neural Network

A Study on Performance Improvement by Reducing Axial Force of Double-Layer Spoke-type PMSM with Core Skew Structure

The Study on Improving Reluctance Torque and Preventing Irreversible Demagnetization by Modified the Shape of Conventional Ferrite Flux-Concentrated Motor

Mechanical properties of in-situ doped polycrystalline 3C-SiC thin films

A Study on a Ferrite Spoke-type Permanent Magnet Synchronous Motor with Improved Post-assembly Magnetization Performance

Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

Origin of Ambipolar Behavior in p-Type Tin Monoxide Semiconductors: Impact of Oxygen Vacancy Defects

A New Driving Method of the Magnetron Power Supply for a Sulfur Plasma Lamp

Patent Clustering and Outlier Ranking Methodologies for Attributed Patent Citation Networks for Technology Opportunity Discovery

Functionality-Based Processing-in-Memory Accelerator for Deep Convolutional Neural Networks

All-Digital Duty-Cycle Corrector With a Wide Duty Correction Range for DRAM Applications

A 0.31-1 GHz Fast-Corrected Duty-Cycle Corrector With Successive Approximation Register for DDR DRAM Applications

Cross-correlation interference-free tiered polyphase codes for GNSS signal design

Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors

Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors

Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric

A 1-mW Solar-Energy-Harvesting Circuit Using an Adaptive MPPT With a SAR and a Counter

Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO 2 /IGZO Thin-Film Transistors

Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO } /IGZO Thin-Film Transistors

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability

Achieving High Field-Effect Mobility Exceeding 90 cm 2 /Vs in a -IGZTO Transistors With Excellent Reliability

Loss Analysis of 3-level LLC Converter with Duty Control

A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation

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