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Gamma Ray on Superjunction MOSFET and Gate Ringing

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4008-4014

2024

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Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

International journal of energy research, 2021-10, Vol.45 (12), p.17622-17630

2021

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Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Microwave and optical technology letters, 2020-06, Vol.62 (6), p.2289-2299

2020

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Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

Applied physics. A, Materials science & processing, 2021-02, Vol.127 (2), Article 77

2021

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Simulation-based analysis of total ionizing dose effects on low noise amplifier for wireless communications

Nuclear engineering and technology, 2024-02, Vol.56 (2), p.568-574

2024

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The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Micromachines (Basel), 2024-04, Vol.15 (4), p.496

2024

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Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Electronics (Basel), 2024-04, Vol.13 (7), p.1352

2024

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Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

IEEE electron device letters, 2010-03, Vol.31 (3), p.192-194

2010

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Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.579-582

2018

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Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.19-22

2022

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Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

Results in physics, 2021-12, Vol.31, p.105013, Article 105013

2021

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Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1116-1121

2015

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Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

Nuclear Engineering and Technology, 2021, 53(4), , pp.1284-1288

2021

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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.898

2023

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Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

Electronics (Basel), 2020-09, Vol.9 (9), p.1402

2020

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Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Micromachines (Basel), 2020-12, Vol.11 (12), p.1100

2020

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Semi-active fuzzy control of cable-stayed bridges using magneto-rheological dampers

Engineering structures, 2007-05, Vol.29 (5), p.776-788

2007

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Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)

Solid-state electronics, 2024-05, Vol.215, p.108884, Article 108884

2024

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Evaluation of thermomechanical behaviors of UO2-5 vol% Mo nuclear fuel pellets with sandwiched configuration

Journal of nuclear materials, 2020-10, Vol.539, p.152295, Article 152295

2020

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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Nanomaterials (Basel, Switzerland), 2020-10, Vol.10 (11), p.2175

2020

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Improved electrochemical performance and thermal compatibility of Fe- and Cu-doped SmBaCo2O5+δ–Ce0.9Gd0.1O1.95 composite cathode for intermediate-temperature solid oxide fuel cells

Journal of power sources, 2011-03, Vol.196 (6), p.3095-3098

2011

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Normally‐off vertical‐type mesa‐gate GaN MOSFET

Electronics letters, 2014-11, Vol.50 (23), p.1749-1751

2014

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Sensing response enhancement of graphene gas sensors by ion beam bombardment

Thin solid films, 2019-05, Vol.677, p.73-76

2019

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Development of Lateral Flow Assay Based on Size-Controlled Gold Nanoparticles for Detection of Hepatitis B Surface Antigen

Sensors (Basel, Switzerland), 2016-12, Vol.16 (12), p.2154-2154

2016

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Normally-off GaN MOSFETs on insulating substrate

Solid-state electronics, 2013-12, Vol.90, p.79-85

2013

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Gamma Ray on Superjunction MOSFET and Gate Ringing

Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

Simulation-based analysis of total ionizing dose effects on low noise amplifier for wireless communications

The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods

Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs

Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Semi-active fuzzy control of cable-stayed bridges using magneto-rheological dampers

Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)

Evaluation of thermomechanical behaviors of UO2-5 vol% Mo nuclear fuel pellets with sandwiched configuration

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Improved electrochemical performance and thermal compatibility of Fe- and Cu-doped SmBaCo2O5+δ–Ce0.9Gd0.1O1.95 composite cathode for intermediate-temperature solid oxide fuel cells

Normally‐off vertical‐type mesa‐gate GaN MOSFET

Sensing response enhancement of graphene gas sensors by ion beam bombardment

Development of Lateral Flow Assay Based on Size-Controlled Gold Nanoparticles for Detection of Hepatitis B Surface Antigen

Normally-off GaN MOSFETs on insulating substrate

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