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Gamma Ray on Superjunction MOSFET and Gate Ringing

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4008-4014

2024

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High performance electrochemical glucose sensor based on three-dimensional MoS2/graphene aerogel

Journal of colloid and interface science, 2017-11, Vol.506, p.379-385

2017

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Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Microwave and optical technology letters, 2020-06, Vol.62 (6), p.2289-2299

2020

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Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Electronics (Basel), 2024-04, Vol.13 (7), p.1352

2024

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Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

International journal of energy research, 2021-10, Vol.45 (12), p.17622-17630

2021

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Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

Applied physics. A, Materials science & processing, 2021-02, Vol.127 (2), Article 77

2021

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Enhanced anomalous magnetization in carbonyl iron by Ni + ion beam irradiation

Scientific reports, 2021-10, Vol.11 (1), p.20118-20118, Article 20118

2021

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Simulation-based analysis of total ionizing dose effects on low noise amplifier for wireless communications

Nuclear engineering and technology, 2024-02, Vol.56 (2), p.568-574

2024

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The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Micromachines (Basel), 2024-04, Vol.15 (4), p.496

2024

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Treatment outcomes based on radiation therapy fields for bifocal germinoma: Synchronous or disseminated disease?

PloS one, 2019-10, Vol.14 (10), p.e0223481-e0223481

2019

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Treatment Outcome and Prognostic Molecular Markers of Supratentorial Primitive Neuroectodermal Tumors

PloS one, 2016-04, Vol.11 (4), p.e0153443-e0153443

2016

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Polyoxometalate-grafted graphene nanohybrid for electrochemical detection of hydrogen peroxide and glucose

Journal of colloid and interface science, 2016-04, Vol.468, p.51-56

2016

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Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

IEEE electron device letters, 2010-03, Vol.31 (3), p.192-194

2010

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Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.579-582

2018

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IEEE_Xplore

The role of VEGF and KDR polymorphisms in moyamoya disease and collateral revascularization

PloS one, 2012-10, Vol.7 (10), p.e47158-e47158

2012

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Design and optimization of GaN‐based betavoltaic cell for enhanced output power density

International journal of energy research, 2021-01, Vol.45 (1), p.799-806

2021

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Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.020902

2024

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Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.19-22

2022

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One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

Electronics (Basel), 2020-12, Vol.9 (12), p.2134

2020

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Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

Electronics (Basel), 2020-09, Vol.9 (9), p.1402

2020

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Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1116-1121

2015

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Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

Results in physics, 2021-12, Vol.31, p.105013, Article 105013

2021

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Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

Nuclear Engineering and Technology, 2021, 53(4), , pp.1284-1288

2021

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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.898

2023

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Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Micromachines (Basel), 2020-12, Vol.11 (12), p.1100

2020

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Gamma Ray on Superjunction MOSFET and Gate Ringing

High performance electrochemical glucose sensor based on three-dimensional MoS2/graphene aerogel

Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

Enhanced anomalous magnetization in carbonyl iron by Ni + ion beam irradiation

Simulation-based analysis of total ionizing dose effects on low noise amplifier for wireless communications

The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Treatment outcomes based on radiation therapy fields for bifocal germinoma: Synchronous or disseminated disease?

Treatment Outcome and Prognostic Molecular Markers of Supratentorial Primitive Neuroectodermal Tumors

Polyoxometalate-grafted graphene nanohybrid for electrochemical detection of hydrogen peroxide and glucose

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods

The role of VEGF and KDR polymorphisms in moyamoya disease and collateral revascularization

Design and optimization of GaN‐based betavoltaic cell for enhanced output power density

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

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