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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.4-1.7GHz Wide Range Fractional-N PLL Using a Transition-Detection DAC for Jitter Reduction

2020 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2020, p.1-4

2020

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0.5kWatt 2.45 GHz GaN‐based microwave heating system design with active phase control

Microwave and optical technology letters, 2023-08, Vol.65 (8), p.2158-2164

2023

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A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.1-3

2023

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A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

IEEE journal of solid-state circuits, 2003-11, Vol.38 (11), p.1943-1951

2003

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A 1.2-V-only 900-mW 10 gb ethernet transceiver and XAUI interface with robust VCO tuning technique

IEEE journal of solid-state circuits, 2005-11, Vol.40 (11), p.2148-2158

2005

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1-26 GHz high power p-i-n diode switch

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.1, p.505-508 vol.1

2000

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1.3 μm tapered active stripe lasers with high slope efficiency and large beam spot-size

11th International Conference on Integrated Optics and Optical Fibre Communications. 23rd European Conference on Optical Communications IOOC-ECOC97, 1997, p.204-207

1997

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A 1.4 Gb/s DLL using 2nd order charge-pump scheme with low phase/duty error for high-speed DRAM application

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.212-523 Vol.1

First edition, 2004

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1- AND 2-BACK TASK PERFORMANCES AND EVENT-RELATED POTENTIAL PATTERNS OF PAROUS AND NULLIPAROUS FEMALES

Journal of mechanics in medicine and biology, 2022-10, Vol.22 (8)

2022

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The 1/f Noise and Random Telegraph Noise Characteristics in Floating-Gate NAND Flash Memories

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1624-1630

2009

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1/ f Noise Characteristics of Surface-Treated Normally-Off Al2O3/GaN MOSFETs

IEEE electron device letters, 2015-03, Vol.36 (3), p.229-231

2015

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A 1-V 1.6-GS/s 5.58-ENOB CMOS Flash ADC using Time-Domain Comparator

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15(6), 66, pp.695-702

2015

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10-Gb/s direct modulation of polymer-based tunable external cavity lasers

2012 38th European Conference and Exhibition on Optical Communications, 2012, p.1-3

2012

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1000-Fold Lifetime Extension of a Nickel Electromechanical Contact Device via Graphene

ACS applied materials & interfaces, 2018-03, Vol.10 (10), p.9085-9093

2018

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A 113.3-dB Dynamic Range 600 Frames/s SPAD X-Ray Detector With Seamless Global Shutter and Time-Encoded Extrapolation Counter

IEEE journal of solid-state circuits, 2023-11, Vol.58 (11), p.1-11

2023

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A -123-dBm Sensitivity Split-Channel BFSK Reconfigurable Data/Wake-Up Receiver for Low-Power Wide-Area Networks

IEEE journal of solid-state circuits, 2021-09, Vol.56 (9), p.2656-2667

2021

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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.204-212

2016

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A − 137 dBm/Hz Noise, 82% Efficiency AC-Coupled Hybrid Supply Modulator With Integrated Buck-Boost Converter

IEEE journal of solid-state circuits, 2016-11, Vol.51 (11), p.2757-2768

2016

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A 16-Element Phased-Array CMOS Transmitter with Variable Gain Controlled Linear Power Amplifier for 5G New Radio

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, p.247-250

2019

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A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features

IEEE journal of solid-state circuits, 2023-04, Vol.58 (4), p.1051-1061

2023

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A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.197-209

2019

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A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.204-206

2018

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17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

International Journal of Photoenergy, 2012-01, Vol.2012 (2012), p.1-6

2012

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1D van der Waals Nb2Pd3Se8‐Based n‐Type Field‐Effect Transistors Prepared by Liquid Phase Exfoliation

Advanced materials interfaces, 2022-07, Vol.9 (20), p.n/a

2022

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.4-1.7GHz Wide Range Fractional-N PLL Using a Transition-Detection DAC for Jitter Reduction

0.5kWatt 2.45 GHz GaN‐based microwave heating system design with active phase control

A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

A 1.2-V-only 900-mW 10 gb ethernet transceiver and XAUI interface with robust VCO tuning technique

1-26 GHz high power p-i-n diode switch

1.3 μm tapered active stripe lasers with high slope efficiency and large beam spot-size

A 1.4 Gb/s DLL using 2nd order charge-pump scheme with low phase/duty error for high-speed DRAM application

1- AND 2-BACK TASK PERFORMANCES AND EVENT-RELATED POTENTIAL PATTERNS OF PAROUS AND NULLIPAROUS FEMALES

The 1/f Noise and Random Telegraph Noise Characteristics in Floating-Gate NAND Flash Memories

1/ f Noise Characteristics of Surface-Treated Normally-Off Al2O3/GaN MOSFETs

A 1-V 1.6-GS/s 5.58-ENOB CMOS Flash ADC using Time-Domain Comparator

10-Gb/s direct modulation of polymer-based tunable external cavity lasers

1000-Fold Lifetime Extension of a Nickel Electromechanical Contact Device via Graphene

A 113.3-dB Dynamic Range 600 Frames/s SPAD X-Ray Detector With Seamless Global Shutter and Time-Encoded Extrapolation Counter

A -123-dBm Sensitivity Split-Channel BFSK Reconfigurable Data/Wake-Up Receiver for Low-Power Wide-Area Networks

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

A − 137 dBm/Hz Noise, 82% Efficiency AC-Coupled Hybrid Supply Modulator With Integrated Buck-Boost Converter

A 16-Element Phased-Array CMOS Transmitter with Variable Gain Controlled Linear Power Amplifier for 5G New Radio

A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features

A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking

A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking

17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

1D van der Waals Nb2Pd3Se8‐Based n‐Type Field‐Effect Transistors Prepared by Liquid Phase Exfoliation

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