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High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

Journal of applied physics, 2017-09, Vol.122 (12)

2017

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Interaction of molecular nitrogen with vanadium oxide in the absence and presence of water vapor at room temperature: Near-ambient pressure XPS

The Journal of chemical physics, 2022-09, Vol.157 (10), p.104701-104701

2022

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Nanoscale graphene/Ge wigglers as building blocks for THz sources

AIP advances, 2017-11, Vol.7 (11), p.115015-115015-6

2017

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Comparison XRD pattern of CoFe2O4 thin films and nanoparticles

Journal of physics. Conference series, 2017, Vol.909 (1)

2017

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Structural characterization of hydrothermally synthesized MnO2 nanorods

Journal of physics. Conference series, 2017, Vol.909 (1)

2017

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Optimization of process parameters in the RF-DC plasma N 2 -H 2 for AISI420 molds and dies

Journal of physics. Conference series, 2017, Vol.909, p.12027

2017

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Temperature-dependent nonlinearities in GaN/AlGaN HEMTs

IEEE transactions on electron devices, 2002-05, Vol.49 (5), p.710-717

2002

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IEEE_Xplore

AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

Solid-state electronics, 2006-06, Vol.50 (6), p.1051-1056

2006

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Schottky barrier height in GaN/AlGaN heterostructures

Solid-state electronics, 2006-06, Vol.50 (6), p.1041-1045

2006

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Transmission line analogy of resonance tunneling phenomena: the generalized impedance concept

Journal of applied physics, 1988-05, Vol.63 (10), p.5191-5193

1988

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Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors

Applied physics letters, 2004-03, Vol.84 (11), p.1970-1972

2004

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Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

Applied physics letters, 2006-05, Vol.88 (20)

2006

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Electron escape time from single quantum wells

IEEE journal of quantum electronics, 1997-02, Vol.33 (2), p.187-191

1997

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IEEE_Xplore

Calculation of the traversal time in resonant tunneling devices

Journal of applied physics, 1989-04, Vol.65 (7), p.2761-2765

1989

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Effect of surface recombination on the Early voltage in HBTs

Semiconductor science and technology, 1999-09, Vol.14 (9), p.840-847

1999

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Electron-phonon interaction within an unbiased and biased quantum well

IEEE journal of quantum electronics, 1999-02, Vol.35 (2), p.216-220

1999

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IEEE_Xplore

A physics-based frequency dispersion model of GaN MESFETs

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.846-853

2004

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IEEE_Xplore

Redistribution of the quantum well density of states under the influence of an electric field

Semiconductor science and technology, 1997-10, Vol.12 (10), p.1226-1230

1997

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A noise model for high electron mobility transistors

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.2087-2092

1994

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IEEE_Xplore

Envelope function description of double-heterojunction quantum wells

Journal of applied physics, 1987-11, Vol.62 (10), p.4200-4203

1987

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Numerical Study of the Cavity Geometry on Supersonic Combustion with Transverse Fuel Injection

Fluid Mechanics and Fluid Power – Contemporary Research, p.1509-1518

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Effect of Hydrogen and Thermal Conductivity on Nucleation of Polycrystalline Si by Excimer Laser Annealing

Japanese Journal of Applied Physics, 2004-01, Vol.43 (1), p.293-298

2004

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A charge control and current-voltage model for inverted MODFET's

IEEE transactions on electron devices, 1995-04, Vol.42 (4), p.586-590

1995

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IEEE_Xplore

Noise properties of AlGaAs/GaAs MODFET's

IEEE transactions on electron devices, 1993-06, Vol.40 (6), p.1174-1176

1993

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IEEE_Xplore

Traversal time in an asymmetric double-barrier quantum-well structure

IEEE journal of quantum electronics, 1995-01, Vol.31 (1), p.3-7

1995

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IEEE_Xplore

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High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

Interaction of molecular nitrogen with vanadium oxide in the absence and presence of water vapor at room temperature: Near-ambient pressure XPS

Nanoscale graphene/Ge wigglers as building blocks for THz sources

Comparison XRD pattern of CoFe2O4 thin films and nanoparticles

Structural characterization of hydrothermally synthesized MnO2 nanorods

Optimization of process parameters in the RF-DC plasma N 2 -H 2 for AISI420 molds and dies

Temperature-dependent nonlinearities in GaN/AlGaN HEMTs

AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

Schottky barrier height in GaN/AlGaN heterostructures

Transmission line analogy of resonance tunneling phenomena: the generalized impedance concept

Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors

Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

Electron escape time from single quantum wells

Calculation of the traversal time in resonant tunneling devices

Effect of surface recombination on the Early voltage in HBTs

Electron-phonon interaction within an unbiased and biased quantum well

A physics-based frequency dispersion model of GaN MESFETs

Redistribution of the quantum well density of states under the influence of an electric field

A noise model for high electron mobility transistors

Envelope function description of double-heterojunction quantum wells

Numerical Study of the Cavity Geometry on Supersonic Combustion with Transverse Fuel Injection

Effect of Hydrogen and Thermal Conductivity on Nucleation of Polycrystalline Si by Excimer Laser Annealing

A charge control and current-voltage model for inverted MODFET's

Noise properties of AlGaAs/GaAs MODFET's

Traversal time in an asymmetric double-barrier quantum-well structure

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