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(0 0 1) Exchange-coupled FCC/L1 sub(0) FePt bilayers

Journal of magnetism and magnetic materials, 2010-07, Vol.322 (13), p.1811-1815

2010

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The {001} facets-dependent superior photocatalytic activities of BiOCl nanosheets under visible light irradiation

Applied surface science, 2015-09, Vol.349, p.957-969

2015

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0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in Helium

Europhysics letters, 1990-01, Vol.11 (1), p.25-30

Oppen, G. V

1990

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The 0 +-0 + transition in 116Sn

Nuclear physics. A, 1972-04, Vol.184 (2), p.443-448

Pleiter, F.

1972

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A 0 + → 0 + transition in Ce 140

Nuclear physics, 1958, Vol.9 (4), p.665-669

1958

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A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

IET circuits, devices & systems, 2021-11, Vol.15 (8), p.738-744

2021

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A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

International journal of circuit theory and applications, 2017-04, Vol.45 (4), p.466-482

2017

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0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487

2013

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0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-01, Vol.20 (5), p.206-208

1999

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An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET''s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

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IEEE_Xplore

0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant (74.9 s)

Microsystems & nanoengineering, 2018-11, Vol.4 (1), p.32-11, Article 32

2018

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A 0.048ns/°C delay generator with variation self-calibration structure(VSCS) for HVICs

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016, p.480-483

2016

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IEEE_Xplore

A 0.05×0.05mm2 RFID Chip with Easily Scaled-Down ID-Memory

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.482-483

2007

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IEEE_Xplore

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447

2019

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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

Japanese Journal of Applied Physics, 1994-01, Vol.33 (1B), p.798-803

1994

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0.05 mu m-CMOS with ultra shallow source/drain junctions fabricated by 5 KeV ion implantation and rapid thermal annealing

Technical digest - International Electron Devices Meeting, 1994, p.485-488

1994

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A 0.058 mm 2 24 μ W Temperature Sensor in 40 nm CMOS Process with ± 0.5 ∘ C Inaccuracy from − 55 to 175 ∘ C

Circuits, systems, and signal processing, 2018-06, Vol.37 (6), p.2278-2298

2018

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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647

1997

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Y 0.08Sr 0.92Fe x Ti 1− x O 3− δ perovskite for solid oxide fuel cell anodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2012, Vol.177 (2), p.151-156

2012

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A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

Journal of semiconductors, 2020-06, Vol.41 (6), p.62401-48

2020

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The 0.1–100 keV spectrum and variability of Mrk 421 in a high state

Monthly notices of the Royal Astronomical Society, 2000-02, Vol.312 (1), p.123-129

2000

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The 0.1-100 kev spectrum and variability of Mrk 421 in a high state

Monthly notices of the Royal Astronomical Society, 1900-02, Vol.312 (1), p.123-129

1900

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The 0.1-100 keV Spectrum of Centaurus X-3: Pulse Phase Spectroscopy of the Cyclotron Line and Magnetic Field Structure

The Astrophysical journal, 2000-02, Vol.530 (1), p.429-440

2000

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The 0.1-100 keV Spectrum of LMC X-4 in the High State: Evidence for a High-Energy Cyclotron Absorption Line

The Astrophysical journal, 2001-05, Vol.553 (1), p.375-381

2001

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(0 0 1) Exchange-coupled FCC/L1 sub(0) FePt bilayers

The {001} facets-dependent superior photocatalytic activities of BiOCl nanosheets under visible light irradiation

0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in Helium

The 0 +-0 + transition in 116Sn

A 0 + → 0 + transition in Ce 140

A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductance

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET''s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant (74.9 s)

A 0.048ns/°C delay generator with variation self-calibration structure(VSCS) for HVICs

A 0.05×0.05mm2 RFID Chip with Easily Scaled-Down ID-Memory

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

0.05 mu m-CMOS with ultra shallow source/drain junctions fabricated by 5 KeV ion implantation and rapid thermal annealing

A 0.058 mm 2 24 μ W Temperature Sensor in 40 nm CMOS Process with ± 0.5 ∘ C Inaccuracy from − 55 to 175 ∘ C

0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Y 0.08Sr 0.92Fe x Ti 1− x O 3− δ perovskite for solid oxide fuel cell anodes

A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

The 0.1–100 keV spectrum and variability of Mrk 421 in a high state

The 0.1-100 kev spectrum and variability of Mrk 421 in a high state

The 0.1-100 keV Spectrum of Centaurus X-3: Pulse Phase Spectroscopy of the Cyclotron Line and Magnetic Field Structure

The 0.1-100 keV Spectrum of LMC X-4 in the High State: Evidence for a High-Energy Cyclotron Absorption Line

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