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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Applied physics letters, 2024-06, Vol.124 (23)

2024

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Room temperature quantum emitters in aluminum nitride epilayers on silicon

Applied physics letters, 2024-06, Vol.124 (24)

2024

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High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

AIP advances, 2015-04, Vol.5 (4), p.047136-047136-11

2015

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Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115 , 174507 (2014)]

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

AIP advances, 2014-11, Vol.4 (11), p.117120-117120-10

2014

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Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Journal of electronic materials, 2014-04, Vol.43 (4), p.1263-1270

2014

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Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening

Electronic Materials Letters, 2015, 11(4), , pp.707-716

2015

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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Electronic Materials Letters, 2016, 12(2), , pp.232-236

2016

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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Electronic materials letters, 2016-03, Vol.12 (2), p.232-236

2016

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Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4650-4656

2017

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Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

Scripta materialia, 2016-03, Vol.113, p.39-42

2016

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Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD

Semiconductor science and technology, 2023-04, Vol.38 (4), p.44001

2023

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Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide

Ultramicroscopy, 2023-12, Vol.254, p.113833-113833, Article 113833

2023

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Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

Journal of magnetism and magnetic materials, 2023-08, Vol.580, p.170877, Article 170877

2023

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OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1333-1339

2018

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Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique

Semiconductor science and technology, 2018-03, Vol.33 (3), p.35009

2018

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A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

Journal of semiconductors, 2011-10, Vol.32 (10), p.32-38

2011

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Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices

IEEE journal of selected topics in quantum electronics, 2023-05, Vol.29 (3: Photon. Elec. Co-Inte. and Adv. Trans. Print.), p.1-12

2023

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Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

Superlattices and microstructures, 2018-01, Vol.113, p.147-152

2018

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Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Optical materials express, 2022-12, Vol.12 (12), p.4606

2022

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Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-09, Vol.35 (5)

2017

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Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon

Solid-state electronics, 2015-02, Vol.104, p.101-108

2015

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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Room temperature quantum emitters in aluminum nitride epilayers on silicon

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115 , 174507 (2014)]

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence

Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD

Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide

Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon

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