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Atomic level cleaning of poly-methyl-methacrylate residues from the graphene surface using radiolized water at high temperatures

Applied physics letters, 2017-09, Vol.111 (10)

2017

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Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios

Applied physics letters, 2021-05, Vol.118 (20)

2021

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Comparative study of the alloying effect on the initial oxidation of Cu-Au(100) and Cu-Pt(100)

Applied physics letters, 2014-03, Vol.104 (12)

2014

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Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Fabrication of conductive interconnects by Ag migration in Cu–Ag core-shell nanoparticles

Applied physics letters, 2010-04, Vol.96 (14)

2010

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Understanding the Rocksalt-to-Wurtzite phase transformation through microstructural analysis of (Al,Sc)N epitaxial thin films

Applied physics letters, 2016-10, Vol.109 (17)

2016

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Determination of the mechanism and extent of surface degradation in Ni-based cathode materials after repeated electrochemical cycling

APL materials, 2016-09, Vol.4 (9), p.096105-096105-7

2016

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Gas mixing system for imaging of nanomaterials under dynamic environments by environmental transmission electron microscopy

Review of scientific instruments, 2014-03, Vol.85 (3)

2014

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Nanoscale dislocation patterning by ultralow load indentation

Applied physics letters, 2005-08, Vol.87 (7), p.073108-073108-3

2005

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Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

Applied physics letters, 2004-07, Vol.85 (1), p.49-51

2004

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Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness

Applied physics letters, 2023-05, Vol.122 (22)

2023

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Nanoscale surface and subsurface defects induced in lithium niobate by a femtosecond laser

Applied physics letters, 2003-11, Vol.83 (21), p.4420-4422

2003

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Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Critical review: Effects of complex interactions on structure and dynamics of supported metal catalysts

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-03, Vol.32 (2)

2014

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Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes

Applied physics letters, 2007-06, Vol.90 (24), p.243103-243103-3

2007

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Fabrication and characterization of solid-state nanopores using a field emission scanning electron microscope

Applied physics letters, 2006-03, Vol.88 (10), p.103109-103109-3

2006

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Organometallic vapor phase epitaxial growth of GaN on ZrN∕AlN∕Si substrates

Applied physics letters, 2008-07, Vol.93 (2)

2008

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Quantitative in situ nanoindentation of aluminum films

Applied physics letters, 2001-04, Vol.79 (11)

2001

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Crystallization and Electrochemical Performance of LSCF-CGO Thin Film Cathodes Processed by Single Solution Spray Pyrolysis

AIP conference proceedings, 2012-03

2012

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In-Situ TEM Controlled Growth of Silicide in Si Nanowires

AIP conference proceedings, 2012-03

2012

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Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-05, Vol.18 (3), p.1566-1571

2000

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Molecular beam epitaxy growth of InAs and In 0.8 Ga 0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1187-1190

2008

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Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1187-1190

2008

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Atomic level cleaning of poly-methyl-methacrylate residues from the graphene surface using radiolized water at high temperatures

Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios

Comparative study of the alloying effect on the initial oxidation of Cu-Au(100) and Cu-Pt(100)

Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers

Fabrication of conductive interconnects by Ag migration in Cu–Ag core-shell nanoparticles

Understanding the Rocksalt-to-Wurtzite phase transformation through microstructural analysis of (Al,Sc)N epitaxial thin films

Determination of the mechanism and extent of surface degradation in Ni-based cathode materials after repeated electrochemical cycling

Gas mixing system for imaging of nanomaterials under dynamic environments by environmental transmission electron microscopy

Nanoscale dislocation patterning by ultralow load indentation

Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness

Nanoscale surface and subsurface defects induced in lithium niobate by a femtosecond laser

Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers

Critical review: Effects of complex interactions on structure and dynamics of supported metal catalysts

Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes

Fabrication and characterization of solid-state nanopores using a field emission scanning electron microscope

Organometallic vapor phase epitaxial growth of GaN on ZrN∕AlN∕Si substrates

Quantitative in situ nanoindentation of aluminum films

Crystallization and Electrochemical Performance of LSCF-CGO Thin Film Cathodes Processed by Single Solution Spray Pyrolysis

In-Situ TEM Controlled Growth of Silicide in Si Nanowires

Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth

Molecular beam epitaxy growth of InAs and In 0.8 Ga 0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

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