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Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

Journal of crystal growth, 2013-09, Vol.379, p.46-56

2013

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Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Journal of crystal growth, 2021-09, Vol.570, p.126236, Article 126236

2021

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Measurement and evaluation of the defects in Cd1−xZnxTe materials by observing their etch pits in real time

Journal of crystal growth, 2019-01, Vol.506, p.1-7

2019

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Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality

Journal of crystal growth, 2022-08, Vol.592, p.126721, Article 126721

2022

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Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Journal of crystal growth, 2022-09, Vol.593, p.126781, Article 126781

2022

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Complexation in germanium in accordance with Vlasov's model for solids

Journal of crystal growth, 2020-12, Vol.552, p.125928, Article 125928

2020

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Laser floating zone growth of SrVO3 single crystals

Journal of crystal growth, 2022-04, Vol.583, p.126518, Article 126518

2022

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Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Journal of crystal growth, 2019-06, Vol.516, p.51-56

2019

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Impact of grain boundary structures on trapping iron

Journal of crystal growth, 2017-06, Vol.468, p.448-451

2017

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Voids in silicon as a sink for interstitial iron: a density functional study

Journal of crystal growth, 2017-06, Vol.468, p.101-103

2017

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The effects of surface treatments of the substrates on high-quality GaN crystal growth

Journal of crystal growth, 2013-06, Vol.372, p.73-77

2013

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Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Journal of crystal growth, 2017-06, Vol.468, p.889-893

2017

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Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Journal of crystal growth, 2017-06, Vol.468, p.536-540

2017

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Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Journal of crystal growth, 2017-06, Vol.468, p.424-432

2017

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Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method

Journal of crystal growth, 2024-05, Vol.634, p.127687, Article 127687

2024

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Wet etching of GaN, AlN, and SiC: a review

Materials science & engineering. R, Reports : a review journal, 2005-01, Vol.48 (1), p.1-46

2005

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Optical and electrical properties of dislocations in plastically deformed GaN

Journal of crystal growth, 2014-10, Vol.403, p.72-76

2014

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Mass transfer and formation of micro-inclusions in Ti-sapphire grown by the HDC method

Journal of crystal growth, 2024-10, Vol.643, p.127820, Article 127820

2024

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Effects of solidification defects on nanoscale mechanical properties of rapid directionally solidified Al-Cu Alloy: A large scale molecular dynamics study

Journal of crystal growth, 2019-12, Vol.527, p.125255, Article 125255

2019

Volltextzugriff (PDF)

Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

Journal of crystal growth, 2016-11, Vol.453, p.173-179

2016

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Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Journal of crystal growth, 2023-11, Vol.622, p.127401, Article 127401

2023

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Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures

Journal of crystal growth, 2023-11, Vol.622, p.127400, Article 127400

2023

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Gamma-ray irradiation and the alterations in photoluminescence emissions of undoped and indium-doped ZnO single crystals

Journal of crystal growth, 2024-02, Vol.627, p.127518, Article 127518

2024

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Solution-mediated phase transition of pharmaceutical compounds: Case studies of acetaminophen and aspirin

Journal of crystal growth, 2023-01, Vol.602, p.126990, Article 126990

2023

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Application of a new grain boundary technology for quasi-single crystalline silicon ingots

Journal of crystal growth, 2023-04, Vol.607, p.127109, Article 127109

2023

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Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Measurement and evaluation of the defects in Cd1−xZnxTe materials by observing their etch pits in real time

Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality

Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Complexation in germanium in accordance with Vlasov's model for solids

Laser floating zone growth of SrVO3 single crystals

Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Impact of grain boundary structures on trapping iron

Voids in silicon as a sink for interstitial iron: a density functional study

The effects of surface treatments of the substrates on high-quality GaN crystal growth

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method

Wet etching of GaN, AlN, and SiC: a review

Optical and electrical properties of dislocations in plastically deformed GaN

Mass transfer and formation of micro-inclusions in Ti-sapphire grown by the HDC method

Effects of solidification defects on nanoscale mechanical properties of rapid directionally solidified Al-Cu Alloy: A large scale molecular dynamics study

Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures

Gamma-ray irradiation and the alterations in photoluminescence emissions of undoped and indium-doped ZnO single crystals

Solution-mediated phase transition of pharmaceutical compounds: Case studies of acetaminophen and aspirin

Application of a new grain boundary technology for quasi-single crystalline silicon ingots

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