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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

MRS Internet journal of nitride semiconductor research, 2002-01, Vol.7, p.8-8, Article e8

2002

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Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e8

1998

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Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

MRS Internet journal of nitride semiconductor research, 1998-01, Vol.3, Article e20

1998

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Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e24

1998

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Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.606-611

1999

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Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN

MRS Internet journal of nitride semiconductor research, 2000-01, Vol.5 (1), p.1-1, Article e8

2000

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Electrical Characterization of Sputter Deposition Induced Defects in n-GaN

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.612-617

1999

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Alternative N precursors and Mg doped GaN grown by MOVPE

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e17

1996

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Yellow Band and Deep levels in Undoped MOVPE GaN

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e7

1996

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A TEM study of GaN grown by ELO on (0001) 6H-SiC

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.76-82

2000

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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

MRS Internet journal of nitride semiconductor research, 2002-01, Vol.7, p.1-1

2002

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Metal/GaN contacts studied by electron spectroscopies

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.915-921

2000

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Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e32

1997

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Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

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Temperature behaviour of the yellow emission in GaN

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e36

1997

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Alternative N precursors and Mg doped GaN grown by MOVPE

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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Ultraviolet Photodetectors Based on Al x Ga 1-x N Schottky Barriers

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e9

1998

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Ultraviolet Photodetectors Based on AlGa1-xN Schottky Barriers

MRS Internet journal of nitride semiconductor research, 1998-01, Vol.3

1998

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p-doping of GaN by MOVPE

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e37

1997

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Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e25

1996

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Temperature behaviour of the yellow emission in GaN

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

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p-doping of GaN by MOVPE

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

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Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e9

1996

Volltextzugriff (PDF)

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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation

Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN

Electrical Characterization of Sputter Deposition Induced Defects in n-GaN

Alternative N precursors and Mg doped GaN grown by MOVPE

Yellow Band and Deep levels in Undoped MOVPE GaN

A TEM study of GaN grown by ELO on (0001) 6H-SiC

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Metal/GaN contacts studied by electron spectroscopies

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire

Temperature behaviour of the yellow emission in GaN

Alternative N precursors and Mg doped GaN grown by MOVPE

Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

Ultraviolet Photodetectors Based on Al x Ga 1-x N Schottky Barriers

Ultraviolet Photodetectors Based on AlGa1-xN Schottky Barriers

p-doping of GaN by MOVPE

Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

Temperature behaviour of the yellow emission in GaN

p-doping of GaN by MOVPE

Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

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