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CMOS spectrophotometric microsystem for malaria detection

IEEE transactions on biomedical engineering, 2023-08, Vol.70 (8), p.1-12

2023

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A 0.9-1.5 GHz Microstrip Antenna With Full Polarization Diversity and Frequency Agility

IEEE transactions on antennas and propagation, 2014-05, Vol.62 (5), p.2398-2406

2014

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Increased Optical Absorption and Light-Matter Interaction in Silicon Thin-Film Solar Cell Nanostructure Using Graphene and 2-D Au/Ag Nanograting

IEEE journal of quantum electronics, 2018-12, Vol.54 (6), p.1-12

2018

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Void-induced thermal impedance in power semiconductor modules: some transient temperature effects

IEEE transactions on industry applications, 2003-09, Vol.39 (5), p.1239-1246

2003

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A Self-Powered Bidirectional DC Solid-State Circuit Breaker Based on SiC JFETs for DC Microgrids

IEEE transactions on industrial electronics (1982), 2024-09, p.1-11

2024

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Response Time of Detectors Based on a Boron-Silicon Junction

2018 IEEE SENSORS, 2018, p.1-4

2018

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Designing Bottom Silicon Solar Cells for Multijunction Devices

IEEE journal of photovoltaics, 2015-03, Vol.5 (2), p.683-690

2015

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Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS With Different Die Attach Materials Under 300 ∘C Power Cycle Stress

IEEE journal of emerging and selected topics in power electronics, 2024-08, Vol.12 (4), p.3619-3628

2024

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Ab-initio assessment of new sulfo-iodide compounds as candidate top-cell materials for silicon-based multi-junction tandem solar cells

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, Vol.2, p.1-6

2019

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The electronic structure of an S-pair in barrier-less metal/silicon junctions

AIP Conference Proceedings, 2013, Vol.1566 (1), p.392

2013

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Accurate electro-thermal model of avalanching junctions subject to ESD currents

Electronics letters, 2003-06, Vol.39 (12), p.1-1

2003

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Analysis and Modeling of SiC JFET Bi-Directional Switches Parasitic Oscillation

IEEE transactions on power electronics, 2019-09, Vol.34 (9), p.8613-8625

2019

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Enhanced photodetection in carbon-based devices with MIS parallel structure

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023, p.214-217

2023

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Transferability of the Light-Soaking Benefits on Silicon Heterojunction Cells to Module

IEEE journal of photovoltaics, 2022-05, Vol.12 (3), p.662-668

2022

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Latching Current Limiter for Space Platform Power Distribution Using a Low-Voltage p-MOSFET and a Normally-ON SiC JFET

IEEE journal of emerging and selected topics in power electronics, 2022-10, Vol.10 (5), p.5464-5473

2022

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Electric and optical transport of MWNT/silicon junctions

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.002315-002320

2012

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Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12158-12162

2021

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Open-circuit voltage decay: moving to a flexible method of characterisation

IET circuits, devices & systems, 2020-10, Vol.14 (7), p.947-955

2020

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Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767

2014

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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681

2020

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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10

2023

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Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

IEEE transactions on power electronics, 2014-10, Vol.29 (10), p.5129-5135

2014

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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Anomalous temperature-dependent characteristics of silicon diffused resistors

Electronics letters, 2003-06, Vol.39 (13), p.1-1

2003

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Improved Proportional Base Driver for SiC BJTs

IEEE transactions on transportation electrification, 2019-03, Vol.5 (1), p.21-30

2019

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CMOS spectrophotometric microsystem for malaria detection

A 0.9-1.5 GHz Microstrip Antenna With Full Polarization Diversity and Frequency Agility

Increased Optical Absorption and Light-Matter Interaction in Silicon Thin-Film Solar Cell Nanostructure Using Graphene and 2-D Au/Ag Nanograting

Void-induced thermal impedance in power semiconductor modules: some transient temperature effects

A Self-Powered Bidirectional DC Solid-State Circuit Breaker Based on SiC JFETs for DC Microgrids

Response Time of Detectors Based on a Boron-Silicon Junction

Designing Bottom Silicon Solar Cells for Multijunction Devices

Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS With Different Die Attach Materials Under 300 ∘C Power Cycle Stress

Ab-initio assessment of new sulfo-iodide compounds as candidate top-cell materials for silicon-based multi-junction tandem solar cells

The electronic structure of an S-pair in barrier-less metal/silicon junctions

Accurate electro-thermal model of avalanching junctions subject to ESD currents

Analysis and Modeling of SiC JFET Bi-Directional Switches Parasitic Oscillation

Enhanced photodetection in carbon-based devices with MIS parallel structure

Transferability of the Light-Soaking Benefits on Silicon Heterojunction Cells to Module

Latching Current Limiter for Space Platform Power Distribution Using a Low-Voltage p-MOSFET and a Normally-ON SiC JFET

Electric and optical transport of MWNT/silicon junctions

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

Open-circuit voltage decay: moving to a flexible method of characterisation

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

Anomalous temperature-dependent characteristics of silicon diffused resistors

Improved Proportional Base Driver for SiC BJTs

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