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Low-cost InP–InGaAs PIN–HBT-based OEIC for up to 20 Gb/s optical communication systems

IET optoelectronics, 2019-06, Vol.13 (3), p.144-150

2019

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GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer

IET optoelectronics, 2012-12, Vol.6 (6), p.277-281

2012

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Semi-analytical small signal parameter extraction method for PIN photodiode

IET optoelectronics, 2017-06, Vol.11 (3), p.103-107

2017

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Electronic‐photonic board as an integration platform for Tb/s multi‐chip optical communication

IET optoelectronics, 2021-04, Vol.15 (2), p.92-101

2021

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Single mode semiconductor laser based on coupled cavities of an active ring laser and Fabry Perot

IET optoelectronics, 2018-06, Vol.12 (3), p.118-121

2018

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Efficient terahertz devices based on III–V semiconductor photoconductors

IET optoelectronics, 2014-04, Vol.8 (2), p.33-39

2014

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Dithering‐based real‐time control of cascaded silicon photonic devices by means of non‐invasive detectors

IET optoelectronics, 2021-04, Vol.15 (2), p.111-120

2021

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Fluorescence microscopy investigation of InGaN-based light-emitting diodes

IET optoelectronics, 2016-04, Vol.10 (2), p.39-43

2016

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Low current density, inverted polarity, high-speed, top-emitting 850 nm vertical-cavity surface-emitting lasers

IET optoelectronics, 2007-10, Vol.1 (5), p.221-225

2007

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JePPIX: the platform for Indium Phosphide-based photonics

IET optoelectronics, 2011-10, Vol.5 (5), p.202-206

Leijtens, X

2011

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Physical modelling of InGaAs–InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications

IET optoelectronics, 2019-02, Vol.13 (1), p.40-45

2019

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VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications

IET optoelectronics, 2023-02, Vol.17 (1), p.24-31

2023

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All‐fibre phase shifter based on tapered fibre coated with MoWS2‐rGO

IET optoelectronics, 2021-12, Vol.15 (6), p.264-269

2021

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ContactLess Integrated Photonic Probe for light monitoring in indium phosphide-based devices

IET optoelectronics, 2015-08, Vol.9 (4), p.146-150

2015

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Development of street lighting system-based novel high-brightness LED modules

IET optoelectronics, 2009-02, Vol.3 (1), p.40-40

2009

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Comparative study on the thermal performance of surface‐mounted devices light‐emitting diode packaging with poly(1,4‐cyclohexylenedimethylene terephthalate) and epoxy moulding compound frames

IET optoelectronics, 2022-02, Vol.16 (1), p.1-9

2022

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Double-image asymmetric cryptosystem using cylindrical diffraction and spectrum fusion and compression

IET optoelectronics, 2020-08, Vol.14 (4), p.169-175

2020

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Influences of contact electrode shape and incidence direction on p-i-n photodiodes

IET optoelectronics, 2019-08, Vol.13 (4), p.151-154

2019

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High-speed 980 nm vertical cavity surface emitting lasers with a multi-oxide layer structure for single-mode operation

IET optoelectronics, 2011-04, Vol.5 (2), p.57-61

2011

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Decoy pulse quantum key distribution for practical purposes

IET optoelectronics, 2008-10, Vol.2 (5), p.195-195

2008

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Nitride-based high power flip-chip near-UV LEDs with reflective submount

IET optoelectronics, 2007-02, Vol.1 (1), p.27-30

2007

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Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

IET optoelectronics, 2009-12, Vol.3 (6), p.259-263

2009

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Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP

IET optoelectronics, 2011-10, Vol.5 (5), p.207-210

2011

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Integrated receivers on silicon-on-insulator for advanced modulation formats

IET optoelectronics, 2011-10, Vol.5 (5), p.211-217

2011

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High-speed electroabsorption modulation of composite-resonator vertical-cavity lasers

IET optoelectronics, 2009-04, Vol.3 (2), p.93-99

2009

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Low-cost InP–InGaAs PIN–HBT-based OEIC for up to 20 Gb/s optical communication systems

GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer

Semi-analytical small signal parameter extraction method for PIN photodiode

Electronic‐photonic board as an integration platform for Tb/s multi‐chip optical communication

Single mode semiconductor laser based on coupled cavities of an active ring laser and Fabry Perot

Efficient terahertz devices based on III–V semiconductor photoconductors

Dithering‐based real‐time control of cascaded silicon photonic devices by means of non‐invasive detectors

Fluorescence microscopy investigation of InGaN-based light-emitting diodes

Low current density, inverted polarity, high-speed, top-emitting 850 nm vertical-cavity surface-emitting lasers

JePPIX: the platform for Indium Phosphide-based photonics

Physical modelling of InGaAs–InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications

VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications

All‐fibre phase shifter based on tapered fibre coated with MoWS2‐rGO

ContactLess Integrated Photonic Probe for light monitoring in indium phosphide-based devices

Development of street lighting system-based novel high-brightness LED modules

Comparative study on the thermal performance of surface‐mounted devices light‐emitting diode packaging with poly(1,4‐cyclohexylenedimethylene terephthalate) and epoxy moulding compound frames

Double-image asymmetric cryptosystem using cylindrical diffraction and spectrum fusion and compression

Influences of contact electrode shape and incidence direction on p-i-n photodiodes

High-speed 980 nm vertical cavity surface emitting lasers with a multi-oxide layer structure for single-mode operation

Decoy pulse quantum key distribution for practical purposes

Nitride-based high power flip-chip near-UV LEDs with reflective submount

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP

Integrated receivers on silicon-on-insulator for advanced modulation formats

High-speed electroabsorption modulation of composite-resonator vertical-cavity lasers

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