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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE journal of quantum electronics, 2017-02, Vol.53 (1), p.1-6

2017

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AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

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Improved frequency response of the 3.5 GHz SMR devices using Ga-doped AlN thin films as the piezoelectric layers

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2022-08, Vol.36 (23)

2022

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1013

2023

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3634-3638

2017

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Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

2021 Device Research Conference (DRC), 2021, p.1-2

2021

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1179-1186

2018

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.455-458

2016

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The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

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Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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Synthesis and Applications of III–V Nanowires

Chemical reviews, 2019-08, Vol.119 (15), p.9170-9220

2019

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150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Improved frequency response of the 3.5 GHz SMR devices using Ga-doped AlN thin films as the piezoelectric layers

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

GaN-based power devices: Physics, reliability, and perspectives

Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

Synthesis and Applications of III–V Nanowires

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

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