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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1120-1126

2022

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On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3623-3629

2022

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Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

IEEE access, 2024, Vol.12, p.150485-150485

2024

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770

2020

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Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

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AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.981-987

2024

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

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Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5343-5349

2018

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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.945-953

2008

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Radiation Effects in AlGaN/GaN HEMTs

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

An AlN/Al0.85Ga0.15N high electron mobility transistor

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